1992 year
- Photoemission measurement of the potential step created at InAs/GaAs junctions by interfacial silicon
J. M. Moison, F. Houzay, and L. Leprince
Phys. Rev. B 46, 7923 (1992)
- Oscillator strength for intersubband transitions in strained n-type SixGe1-x quantum wells
S. K. Chun and K. L. Wang
Phys. Rev. B 46, 7682 (1992)
- Direct-band-gap structure of uniaxial-stressed SixGe1-x/Ge [111] strained-layer superlattices
Shang Yuan Ren, John D. Dow and Gui
Phys. Rev. B 45, 6628 (1992)
- Radiative transitions associated with hole confinement at Si delta -doped planes in GaAs
Mao
Phys. Rev. B 45, 14114 (1992)