2003 year
- Morphology Response to Strain Field Interferences in Stacks of Highly Ordered Quantum Dot Arrays
H. Heidemeyer, U. Denker, C. Müller, and O. G. Schmidt
Phys. Rev. Lett. 91, 196103 (2003)
- Out-of-well carrier screening in a strained InxGa1-xN/GaN multiple quantum well structure
F. Chen and A. N. Cartwright
Phys. Rev. B 68, 233304 (2003)
- Three-stage nucleation and growth of Ge self-assembled quantum dots grown on partially relaxed SiGe buffer layers
H. J. Kim, Z. M. Zhao, and Y. H. Xie
Phys. Rev. B 68, 205312 (2003)
- Roughness-induced piezoelectric scattering in lattice-mismatched semiconductor quantum wells
D. N. Quang, V. N. Tuoc, and T. D. Huan
Phys. Rev. B 68, 195316 (2003)
- Manipulating the L-valley electron g factor in Si-Ge heterostructures
F. A. Baron, A. A. Kiselev, H. D. Robinson, K. W. Kim, K. L. Wang, and E. Yablonovitch
Phys. Rev. B 68, 195306 (2003)
- All-optical injection and control of spin and electrical currents in quantum wells
A. Najmaie, R. D. R. Bhat, and J. E. Sipe
Phys. Rev. B 68, 165348 (2003)
- Donor states in modulation-doped Si/SiGe heterostructures
A. Blom, M. A. Odnoblyudov, I. N. Yassievich, and K.-A. Chao
Phys. Rev. B 68, 165338 (2003)
- Interface optical-phonon modes and electron
J.-j. Shi
Phys. Rev. B 68, 165335 (2003)
- Ordering effects on optical transitions in GaxIn1-xP/(Al0.66Ga0.34)yIn1-yP quantum wells studied by photoluminescence and reflectivity spectroscopy
J. Shao, R. Winterhoff, A. Dörnen, E. Baars, and J. Chu
Phys. Rev. B 68, 165327 (2003)
- Strain fluctuations in a real [001]-oriented zinc-blende-structure surface quantum well
D. N. Quang, V. N. Tuoc, N. H. Tung, and T. D. Huan
Phys. Rev. B 68, 153306 (2003)
- Carrier mobility versus carrier density in AlxGa1-xN/GaN quantum wells
J.-L. Farvacque and Z. Bougrioua
Phys. Rev. B 68, 035335 (2003)
- Luminescence quantum beats of strain-induced GaAs quantum dots
K. Nishibayashi, T. Okuno, Y. Masumoto, and H.-W. Ren
Phys. Rev. B 68, 035333 (2003)
- Effect of uniaxial stress on photoluminescence in GaN and stimulated emission in InxGa1-xN/GaN multiple quantum wells
M. Ichimiya, M. Watanabe, T. Ohata, T. Hayashi, and A. Ishibashi
Phys. Rev. B 68, 035328 (2003)
- Bychkov-Rashba spin splitting and its dependence on magnetic field in InSb/In0.91Al0.09Sb asymmetric quantum wells
P. Pfeffer and W. Zawadzki
Phys. Rev. B 68, 035315 (2003)
- Self-assembling of nanovoids in 800-keV Ge-implanted Si/SiGe multilayered structures
P. I. Gaiduk, A. N. Larsen, J. L. Hansen, E. Wendler, and W. Wesch
Phys. Rev. B 67, 235311 (2003)
- Intrinsic electric fields in N-polarity GaN/AlxGa1-xN quantum wells with inversion domains
T. V. Shubina, A. A. Toropov, V. N. Jmerik, M. G. Tkachman, A. V. Lebedev, V. V. Ratnikov, A. A. Sitnikova, V. A. Vekshin, S. V. Ivanov, P. S. Kop
Phys. Rev. B 67, 195310 (2003)
- Piezoelectric effect on the optical phonon modes of strained cubic semiconductors: Case of CdTe quantum wells
V. C. Stergiou, N. T. Pelekanos, and Y. S. Raptis
Phys. Rev. B 67, 165304 (2003)
- Nonlinear polaritonic effects in photonic wires
L. M. Woods and T. L. Reinecke
Phys. Rev. B 67, 115336 (2003)
- Mapping of strain and electric fields in GaAs/AlxGa1-xAs quantum-well samples by laser-assisted NMR
M. Eickhoff, B. Lenzmann, D. Suter, S. E. Hayes, and A. D. Wieck
Phys. Rev. B 67, 085308 (2003)