2003 year
- Optical imaging of trion diffusion and drift in GaAs quantum wells
F. Pulizzi, D. Sanvitto, P.C.M. Christianen, A.J. Shields, S.N. Holmes, M.Y. Simmons, D.A. Ritchie, M. Pepper, and J.C. Maan
Phys. Rev. B 68, 205304 (2003)
- Ordering effects on optical transitions in GaxIn1-xP/(Al0.66Ga0.34)yIn1-yP quantum wells studied by photoluminescence and reflectivity spectroscopy
J. Shao, R. Winterhoff, A. Dörnen, E. Baars, and J. Chu
Phys. Rev. B 68, 165327 (2003)
- Intrasubband spin-flip relaxation by one-magnon processes in Cd1-xMnxTe quantum wells
E. Souto, O. A. C. Nunes, F. M. S. Lima, D. A. Agrello, and A. L. A. Fonseca
Phys. Rev. B 68, 125317 (2003)
- Recombination dynamics of spatially separated electron-hole plasmas in GaAs/AlAs mixed type-I/type-II quantum well structures
P. Dawson and M. J. Godfrey
Phys. Rev. B 68, 115326 (2003)
- Magneto-optical transitions in nanoscopic rings
J. I. Climente, J. Planelles, and W. Jaskólski
Phys. Rev. B 68, 075307 (2003)
- Exchange-enhanced energy shifts in the polarized photoluminescence of a two-dimensional hole system in the integer quantum Hall regime
T. B. Kehoe, C. M. Townsley, A. Usher, M. Henini, and G. Hill
Phys. Rev. B 68, 045325 (2003)
- Effects of photoluminescence polarization in semiconductor quantum wells subjected to an in-plane magnetic field
Y. G. Semenov and S. M. Ryabchenko
Phys. Rev. B 68, 045322 (2003)
- Evidence for selective delocalization of N-pair states in dilute GaAs1-xNx
B. A. Weinstein, S. R. Stambach, T. M. Ritter, J. O. Maclean, and D. J. Wallis
Phys. Rev. B 68, 035336 (2003)
- Quantum size effects on exciton states in indirect-gap quantum dots
D. H. Feng, Z. Z. Xu, T. Q. Jia, X. X. Li, and S. Q. Gong
Phys. Rev. B 68, 035334 (2003)
- Luminescence quantum beats of strain-induced GaAs quantum dots
K. Nishibayashi, T. Okuno, Y. Masumoto, and H.-W. Ren
Phys. Rev. B 68, 035333 (2003)
- Effect of uniaxial stress on photoluminescence in GaN and stimulated emission in InxGa1-xN/GaN multiple quantum wells
M. Ichimiya, M. Watanabe, T. Ohata, T. Hayashi, and A. Ishibashi
Phys. Rev. B 68, 035328 (2003)
- Electronic parameters and interfacial properties of GaAs/AlxGa1-xAs multiquantum wells grown on (111)A GaAs by metalorganic vapor phase epitaxy
S. Cho, A. Sanz-Hervás, A. Majerfeld, and B. W. Kim
Phys. Rev. B 68, 035308 (2003)
- Narrow-line excitonic photoluminescence in GaN/AlxGa1-xN quantum well structures with inversion domains
T. V. Shubina, V. N. Jmerik, S. V. Ivanov, P. S. Kop
Phys. Rev. B 67, 241306 (2003)
- Electronic structure and optical properties of ZnS/CdS nanoheterostructures
J. Pérez-Conde and A. K. Bhattacharjee
Phys. Rev. B 67, 235303 (2003)
- Dynamics of unidirectional phonon-assisted transport of photoexcited carriers in step-graded Inx(Al0.17Ga0.83)1-xAs/Al0.17Ga0.83As multiple quantum wells
S. Machida, M. Matsuo, K. Fujiwara, J. R. Folkenberg, and J. M. Hvam
Phys. Rev. B 67, 205322 (2003)
- Intrinsic electric fields in N-polarity GaN/AlxGa1-xN quantum wells with inversion domains
T. V. Shubina, A. A. Toropov, V. N. Jmerik, M. G. Tkachman, A. V. Lebedev, V. V. Ratnikov, A. A. Sitnikova, V. A. Vekshin, S. V. Ivanov, P. S. Kop
Phys. Rev. B 67, 195310 (2003)
- Exciton spin relaxation in diluted magnetic semiconductor Zn1-xMnxSe/CdSe superlattices: Effect of spin splitting and role of longitudinal optical phonons
W. M. Chen, I. A. Buyanova, G. Yu. Rudko, A. G. Mal
Phys. Rev. B 67, 125313 (2003)
- Acoustically pumped stimulated emission in GaAs/AlGaAs quantum wells
A. B. Nadtochii, O. A. Korotchenkov, and H. G. Grimmeiss
Phys. Rev. B 67, 125301 (2003)
- Nonlinear emission due to electron-polariton scattering in a semiconductor microcavity
A. Qarry, G. Ramon, R. Rapaport, E. Cohen, A. Ron, A. Mann, E. Linder, and L. N. Pfeiffer
Phys. Rev. B 67, 115320 (2003)
- Gamma -X electron level crossover in ZnSe/BeTe multiple quantum wells
A. A. Toropov, O. V. Nekrutkina, M. O. Nestoklon, S. V. Sorokin, D. D. Solnyshkov, S. V. Ivanov, A. Waag, and G. Landwehr
Phys. Rev. B 67, 113307 (2003)
- Electron-hole recombination density matrices obtained from large configuration-interaction expansions
S. Corni, M. Braskén, M. Lindberg, J. Olsen, and D. Sundholm
Phys. Rev. B 67, 085314 (2003)
- Photoluminescence of GaAs/AlxGa1-xAs multiple quantum well structures containing delta -doping superlattices
S. M. Landi, C. V.-B. Tribuzy, P. L. Souza, R. Butendeich, A. C. Bittencourt, and G. E. Marques
Phys. Rev. B 67, 085304 (2003)
- Multisubband photoluminescence in p-type modulation-doped AlxGa1-xN/GaN superlattices
E. L. Waldron, E. F. Schubert, and A. M. Dabiran
Phys. Rev. B 67, 045327 (2003)
- Well-width dependence of optical properties of rare-earth ion-doped ZnS0.8Se0.2/undoped ZnS multiple quantum wells
M. Tanaka, H. Yamada, T. Maruyama, and K. Akimoto
Phys. Rev. B 67, 045305 (2003)
- Nonpolar InxGa1-xN/GaN(11-bar00) multiple quantum wells grown on gamma -LiAlO2(100) by plasma-assisted molecular-beam epitaxy
Y. J. Sun, O. Brandt, S. Cronenberg, S. Dhar, H. T. Grahn, K. H. Ploog, P. Waltereit, and J. S. Speck
Phys. Rev. B 67, 041306 (2003)
- Spatiotemporal dynamics of quantum-well excitons
H. Zhao, B. Dal Don, S. Moehl, H. Kalt, K. Ohkawa, and D. Hommel
Phys. Rev. B 67, 035306 (2003)