Electrical Properties
- Electrical and structural properties of PHEMT heterostructures based on AlGaAs/InGaAs/AlGaAs and δ-doped on two sides
I. S. Vasil
Semiconductors, 2008, Volume 42, Number 9, 10841091
- High-power lasers (λ = 940
D. A. Vinokurov, A. L. Stankevich, V. V. Shamakhov, V. A. Kapitonov, A. Yu. Leshko, A. V. Lyutetskiĭ, D. N. Nikolaev, N. A. Pikhtin, N. A. Rudova, Z. N. Sokolova, S. O. Slipchenko, M. A. Khomylev and I. S. Tarasov
Semiconductors, 2006, Volume 40, Number 6, 07450748
- Self-consistent calculation of tunneling current in w-GaN/AlGaN(0001) two-barrier heterostructures
S. N. Grinyaev and A. N. Razzhuvalov
Semiconductors, 2006, Volume 40, Number 6, 06750680
- Simulation of capacitance-voltage characteristics of heterostructures with quantum wells using a self-consistent solution of the Schrödinger and Poisson equations
V. I. Zubkov
Semiconductors, 2006, Volume 40, Number 10, 12041208
- High-frequency nonlinear response of double-well nanostructures
V. F. Elesin and I. Yu. Kateev
Semiconductors, 2005, Volume 39, Number 9, 10711075
- Current and temperature tuning of quantum-well lasers operating in 2.0-to 2.4-
A. P. Astakhova, A. N. Baranov, A. Viset, A. N. Imenkov, N. M. Kolchanova, N. D. Stoyanov, A. Chernyaev, D. A. Yarekha and Yu. P. Yakovlev
Semiconductors, 2003, Volume 37, Number 4, 04850490
- Weak-field magnetoresistance of two-dimensional electrons in In0.53Ga0.47As/InP heterostructures in the persistent photoconductivity regime
D. D. Bykanov, A. M. Kreshchuk, S. V. Novikov, T. A. Polyanskaya and I. G. Savel
Semiconductors, 1998, Volume 32, Number 9, 09850991
- Photovoltaic effect in an asymmetric GaAs/AlGaAs nanostructure produced as a result of laser excitation
I. V. Kucherenko, L. K. Vodop
Semiconductors, 1997, Volume 31, Number 7, 07400742
- Excitonic effects in the photoconductivity of quantum-well GaxIn1−xAs/InP structures
M. F. Panov and A. N. Pikhtin
Semiconductors, 1997, Volume 31, Number 7, 07190721
- Probing the Ground State Electronic Structure of a Correlated Electron System by Quantum Well States: Ag/Ni(111)
A. Varykhalov, A. M. Shikin, W. Gudat, P. Moras, C. Grazioli, C. Carbone, and O. Rader
Phys. Rev. Lett. 95, 247601 (2005)
- Roughness-induced mechanisms for electron scattering in wurtzite group-III-nitride heterostructures
Doan Nhat Quang, Vu Ngoc Tuoc, Nguyen Huyen Tung, Nguyen Viet Minh, and Pham Nam Phong
Phys. Rev. B 72, 245303 (2005)
- Internal electric field in wurtzite ZnO∕Zn0.78Mg0.22O quantum wells
C. Morhain, T. Bretagnon, P. Lefebvre, X. Tang, P. Valvin, T. Guillet, B. Gil, T. Taliercio, M. Teisseire-Doninelli, B. Vinter, and C. Deparis
Phys. Rev. B 72, 241305(R) (2005)
- Experimental and ab initio study of the structural and electronic properties of subnanometer thick Ag films on Pd(111)
V. Mikšić Trontl, I. Pletikosić, M. Milun, P. Pervan, P. Lazić, D. Šokčević, and R. Brako
Phys. Rev. B 72, 235418 (2005)
- Current oscillations, switching, and hysteresis in CdSe nanorod superlattices
Hugo E. Romero, Gregory Calusine, and Marija Drndic
Phys. Rev. B 72, 235401 (2005)
- Structural, electrical, and magneto-optical characterization of paramagnetic GaMnAs quantum wells
M. Poggio, R. C. Myers, N. P. Stern, A. C. Gossard, and D. D. Awschalom
Phys. Rev. B 72, 235313 (2005)
- Electronic and optical properties of Si∕SiO2 nanostructures. I. Electron-hole collective processes in single Si∕SiO2 quantum wells
N. Pauc, V. Calvo, J. Eymery, F. Fournel, and N. Magnea
Phys. Rev. B 72, 205324 (2005)
- Optical and electronic properties in (In0.53Ga0.47As)1−z∕(In0.52Al0.48As)z digital alloys
J. T. Woo, J. H. Kim, T. W. Kim, J. D. Song, and Y. J. Park
Phys. Rev. B 72, 205320 (2005)
- Hole-hole interaction in a strained InxGa1
G. M. Minkov and A. A. Sherstobitov, A. V. Germanenko, O. E. Rut, and V. A. Larionova, B. N. Zvonkov
Phys. Rev. B 72, 165325 (2005)
- Electric field dependence of spin coherence in (001) GaAs/AlxGa1
Wayne H. Lau, Michael E. Flatté
Phys. Rev. B 72, 161311(R) (2005)
- Bound-to-bound and bound-to-free transitions in surface photovoltage spectra: Determination of the band offsets for InxGa1
Massimo Galluppi, Lutz Geelhaar, and Henning Riechert, Michael Hetterich and Andreas Grau, Stefan Birner, Wolfgang Stolz
Phys. Rev. B 72, 155324 (2005)
- Oscillatory Behavior of the Tunneling Current in Germanium in a Longitudinal Magnetic Field
W. Bernard, S. Goldstein, H. Roth, W. D. Straub and J. E. Mulhern, Jr.
Phys. Rev. 166, 785 (1968)