Piezoelectric Properties
- Derivation of built-in polarization potentials in nitride-based semiconductor quantum dots
D. P. Williams, A. D. Andreev, E. P. O\'Reilly, and D. A. Faux
Phys. Rev. B 72, 235318 (2005)
- Effects of strain and confinement on the emission wavelength of InAs quantum dots due to a GaAs1−xNx capping layer
O. Schumann, S. Birner, M. Baudach, L. Geelhaar, H. Eisele, L. Ivanova, R. Timm, A. Lenz, S. K. Becker, M. Povolotskyi, M. Dähne, G. Abstreiter, and H. Riechert
Phys. Rev. B 71, 245316 (2005)
- Pure dephasing and phonon dynamics in GaAs- and GaN-based quantum dot structures: Interplay between material parameters and geometry
B. Krummheuer, V. M. Axt, T. Kuhn, I. D
Phys. Rev. B 71, 235329 (2005)
- Self-consistent calculations of the optical properties of GaN quantum dots
V. Ranjan, G. Allan, C. Priester, and C. Delerue
Phys. Rev. B 68, 115305 (2003)
- Control of dephasing and phonon emission in coupled quantum dots
S. Debald,1 T. Brandes, and B. Kramer
Phys. Rev. B 66, 041301(R) (2002)
- Modeling self-assembled quantum dots by the effective bond-orbital method
Sophia J. Sun and Yia-Chung Chang
Phys. Rev. B 62, 13631 (2000)
- Coulomb interaction of two electrons in the quantum dot formed by the surface acoustic wave in a narrow channel
Godfrey Gumbs, G. R. Azin and M. Pepper
Phys. Rev. B 60, R13954 (1999)
- Elastic scattering and absorption of surface acoustic waves by a quantum dot
Andreas Knaautbchen, Yehoshua B. Levinson, Ora Entin
Phys. Rev. B 55, 5325 (1997)
- Nature of optical transitions in self-organized InAs/GaAs quantum dots
M. Grundmann*, N. N. Ledentsov, O. Stier, J. Böhrer, D. Bimberg, V. M. Ustinov, P. S. Kop'ev, and Zh. I. Alferov
Phys. Rev. B 53, R10509 (1996)