1992 year
- Optical study of extended-molecular-layer flat islands in lattice-matched In0.53Ga0.47As/InP and In0.53Ga0.47As/In1-xGaxAsyP1-y quantum wells grown by low-pressure metal-organic vapor-phase epitaxy with different interruption cycles
R. Sauer, S. Nilsson, P. Roentgen, W. Heuberger, V. Graf, A. Hangleiter and R. Spycher
Phys. Rev. B 46, 9525 (1992)
- Observation of normal-incidence intersubband absorption in n-type Al0.09Ga0.91Sb quantum wells
E. R. Brown, S. J. Eglash, and K. A. McIntosh
Phys. Rev. B 46, 7244 (1992)
- Optical properties of CdTe/Cd1-xZnxTe strained-layer single quantum wells
T. Li, H. J. Lozykowski and John L. Reno
Phys. Rev. B 46, 6961 (1992)
- Influence of Al content in the barrier on the optical properties of GaAs/AlxGa1-xAs (x=0.1
Nguyen Hong Ky, J. D. Ganière, M. Gailhanou, F. Morier
Phys. Rev. B 46, 6947 (1992)
- Fine-structure features due to wave-function localization in coupled GaAs-AlxGa1-xAs quantum wells
D. C. Reynolds, K. R. Evans, B. Jogai, C. E. Stutz and P. W. Yu
Phys. Rev. B 46, 4748 (1992)
- Spin tuning in magnetically coupled double quantum wells
J. F. Smyth, D. D. Awschalom, N. Samarth, H. Luo, and J. K. Furdyna
Phys. Rev. B 46, 4340 (1992)
- Raman scattering near the (E0+ Delta 0) resonance from [211]-oriented Ga1-xInxAs/GaAs multiple quantum wells
I. Sela, D. L. Smith, S. Subbanna and H. Kroemer
Phys. Rev. B 46, 1480 (1992)
- Electronic states in GaAs-AlAs lateral-surface superlattices produced by deposition of AlAs and GaAs fractional layers on (001) vicinal GaAs substrates
Hong Sun
Phys. Rev. B 46, 12371 (1992)
- Electron-gas boundary properties in non-neutral jellium (wide-parabolic-quantum-well) systems
John F. Dobson
Phys. Rev. B 46, 10163 (1992)
- Tunneling spectroscopy of energy levels in wide quantum wells in tilted magnetic fields
C. Kutter, V. Chitta, J. C. Maan, V. I. Fal
Phys. Rev. B 45, 8749 (1992)
- Magneto-optics of narrow GaAs/AlxGa1-xAs quantum wells grown on vicinal substrates
F. Meseguer, N. Mestres, J. Sánchez
Phys. Rev. B 45, 6942 (1992)
- Monolayer-scale optical investigation of segregation effects in semiconductor heterostructures
Jean
Phys. Rev. B 45, 6313 (1992)
- Impact ionization of excitons and donors in AlxGa1-xAs/(n-type GaAs):Si quantum wells
H. Weman, G. M. Treacy, H. P. Hjalmarson, K. K. Law, J. L. Merz, and A. C. Gossard
Phys. Rev. B 45, 6263 (1992)
- Quantum-well structures of direct-band-gap GaAs1-xPx/GaAs studied by photoluminescence and Raman spectroscopy
M.
Phys. Rev. B 45, 4312 (1992)
- Heavy- and light-hole character of optical transitions in InAs/GaAs single-monolayer quantum wells
O. Brandt, H. Lage, and K. Ploog
Phys. Rev. B 45, 4217 (1992)
- Properties of thin strained layers of GaAs grown on InP
M.
Phys. Rev. B 45, 3628 (1992)
- Optical properties of excitons in GaAs/Al0.3Ga0.7As symmetric double quantum wells
T. Westgaard, Q. X. Zhao, B. O. Fimland, K. Johannessen and L. Johnsen
Phys. Rev. B 45, 1784 (1992)
- Comparison of (111)- and (001)-grown GaAs-AlxGa1-xAs quantum wells by magnetoreflectance
Weimin Zhou, Doran D. Smith, H. Shen, J. Pamulapati, M. Dutta, A. Chin and J. Ballingall
Phys. Rev. B 45, 12156 (1992)
- Comparison of (111)- and (001)-grown GaAs-AlxGa1-xAs quantum wells by magnetoreflectance
Weimin Zhou, Doran D. Smith, H. Shen, J. Pamulapati, M. Dutta, A. Chin and J. Ballingall
Phys. Rev. B 45, 12156 (1992)
- Modulated reflectivity spectrum of strained ZnSe/Zn1-xCdxSe/ZnSe single quantum wells
R. G. Alonso, C. Parks, A. K. Ramdas, H. Luo, N. Samarth, J. K. Furdyna and L. R. Ram
Phys. Rev. B 45, 1181 (1992)