Carrier Capture into the Quantum Dots
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Phys. Rev. B 72, 235417 (2005)
- Homogeneous broadening in quantum dots due to Auger scattering with wetting layer carriers
H. H. Nilsson, J.-Z. Zhang, and I. Galbraith
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O. Engström and P. T. Landsberg
Phys. Rev. B 72, 075360 (2005)
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Phys. Rev. B 72, 035342 (2005)
- Polarons in semiconductor quantum dots and their role in the quantum kinetics of carrier relaxation
J. Seebeck, T. R. Nielsen, P. Gartner and F. Jahnke
Phys. Rev. B 71, 125327 (2005)
- Carrier dynamics in an InGaAs dots-in-a-well structure formed by atomic-layer epitaxy
Y. M. Park, Y. J. Park, K. M. Kim, J. C. Shin, J. D. Song, J. I. Lee, and K.-H. Yoo
Phys. Rev. B 70, 035322 (2004)
- Many-body theory of carrier capture and relaxation in semiconductor quantum-dot lasers
T. R. Nielsen, P. Gartner, and F. Jahnke
Phys. Rev. B 69, 235314 (2004)
- Impact of carrier redistribution on the photoluminescence of CdTe self-assembled quantum dot ensembles
S. Mackowski, G. Prechtl, W. Heiss, F. V. Kyrychenko, G. Karczewski, and J. Kossut
Phys. Rev. B 69, 205325 (2004)
- Effect of an additional infrared excitation on the luminescence efficiency of a single InAs/GaAs quantum dot
E. S. Moskalenko, V. Donchev, K. F. Karlsson, P. O. Holtz, B. Monemar, W. V. Schoenfeld, J. M. Garcia, and P. M. Petroff
Phys. Rev. B 68, 155317 (2003)
- Temperature and excitation density dependence of the photoluminescence from annealed InAs/GaAs quantum dots
E. C. Le Ru, J. Fack, and R. Murray
Phys. Rev. B 67, 245318 (2003)
- Lateral carrier transfer in CdxZn1-xSe/ZnSySe1-y quantum dot layers
S. Rodt, V. Türck, R. Heitz, F. Guffarth, R. Engelhardt, U. W. Pohl, M. Straßburg, M. Dworzak, A. Hoffmann, and D. Bimberg
Phys. Rev. B 67, 235327 (2003)
- Geometry dependence of Auger carrier capture rates into cone-shaped self-assembled quantum dots
I. Magnusdottir, S. Bischoff, A. V. Uskov, and J. Mørk
Phys. Rev. B 67, 205326 (2003)
- Observation of Phonon Bottleneck in Quantum Dot Electronic Relaxation
J. Urayama, T. B. Norris, J. Singh and P. Bhattacharya
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- Carrier capture processes in strain-induced InxGa1
C. Lingk, W. Helfer, G. von Plessen, J. Feldmann, K. Stock, M. W. Feise, D. S. Citrin, H. Lipsanen, M. Sopanen, R. Virkkala, J. Tulkki and J. Ahopelto
Phys. Rev. B 62, 13588 (2000)
- Experimental determination of Auger capture coefficients in self-assembled quantum dots
S. Raymond, K. Hinzer, S. Fafard and J. L. Merz
Phys. Rev. B 61, R16331 (2000)
- Carrier thermal escape and retrapping in self-assembled quantum dots
S. Sanguinetti, M. Henini, M. Grassi Alessi, M. Capizzi, P. Frigeri and S. Franchi
Phys. Rev. B 60, 8276 (1999)
- Carrier capture and escape in InxGa1
S. Marcinkeviius and R. Leon
Phys. Rev. B 59, 4630 (1999)
- Coulomb Charging Effect in Self-Assembled Ge Quantum Dots Studied by Admittance Spectroscopy
S. K. Zhang, H. J. Zhu, F. Lu, Z. M. Jiang, and Xun Wang
Phys. Rev. Lett. 80, 3340 (1998)
- Theory of random population for quantum dots
M. Grundmann and D. Bimberg
Phys. Rev. B 55, 9740 (1997)
- Carrier capture times in quantum-well, -wire, and -box distributed-feedback lasers characterized by dynamic lasing emission measurements
Jian Wang Griesinger, U.A. Geiger, M. Scholz, F. Schweizer, H.C.
IEEE J. Select. Topics Quantum Electron., 3, 223 (1997)
- Inhomogeneous line broadening and the threshold current density of a semiconductor quantum dot laser
L. V. Asryan and R. A. Suris
Semicond. Sci. Technol., 11, 554, (1996)
- Rapid carrier relaxation in self-assembled InxGa1-xAs/GaAs quantum dots
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Phys. Rev. B 54, 11532 (1996)
- Emission dynamics of dot and wire DFB lasers
Jian Wang Griesinger, U.A. Geiger, M. Ottenwaelder, D. Scholz, F. Schweizer, H.
IEEE J. Phot. Technol. Lett., 8, 1585 (1996)
- Electronic structure and energy relaxation in strained InAs/GaAs quantum pyramids
Grundmann M., Heitz R., Ledentsov N., Stier O., Bimberg D. Ustinov V. M., Kop'ev P. S., Alferov Zh. I., Ruvimov S. S., Werner P., Gösele U.Heydenreich J.
Superlatt. and Microstruct., 19, 81 (1995)
- Multiphonon-assisted tunneling through deep levels: A rapid energy-relaxation mechanism in nonideal quantum-dot heterostructures
Peter C. Sercel
Phys. Rev. B 51, 14532 (1995)
- Temperature dependence of luminescence efficiency, exciton transfer, and exciton localization in GaAs/AlxGa1-xAs quantum wires and quantum dots
Yong Zhang, M. D. Sturge, K. Kash, B. P. van der Gaag, A. S. Gozdz, L. T. Florez, and J. P. Harbison
Phys. Rev. B 51, 13303 (1995)
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R. P. Mirin, J. P. Ibbetson, K. Nishi, A. C. Gossard and J. E. Bowers
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- Intrinsic mechanism for the poor luminescence properties of quantum-box systems
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