1998 year
- Operating characteristics and their anisotropy in a high-power laser (1.5 W, 300 K) with a quantum-dot active region
Yu. M. Shernyakov, A. Yu. Egorov, B. V. Volovik, A. E. Zhukov, A. R. Kovsh, A. V. Lunev, N. N. Ledentsov, M. V. Maksimov, A. V. Sakharov, V. M. Ustinov, Zhen Zhao, P. S. Kop'ev, Zh. I. Alferov, and D. Bimberg
Tech. Phys. Lettr., 24, 351 (1998)
- Low-threshold quantum-dot injection heterolaser emitting at 1.84
V. M. Ustinov, A. R. Kovsh, A. E. Zhukov, A. Yu. Egorov, N. N. Ledentsov, A. V. Lunev, Yu. M. Shernyakov, M. V. Maksimov, A. F. Tsatsul'nikov, B. V. Volovik, P. S. Kop'ev, and Zh. I. Alferov
Tech. Phys. Lettr., 24, 22 (1998)
- Quantum dot heterostructures: fabrication, properties, lasers (Review)
N. N. Ledentsov, V. M. Ustinov, V. A. Shchukin., P. S. Kop'ev, Zh. I. Alferov and D. Bimberg
Semicond., 32, 343 (1998)
- Continuous stimulated emission at T = 293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(001) surfaces misoriented in the [010] direction in the active region
V. P. Evtikhiev, I. V. Kudryashov, E. Yu. Kotel'nikov, V. E. Tokranov, A. N. Titkov, I. S. Tarasov, and Zh. I. Alferov
Semicond., 32, 1323 (1998)
- High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laser
M. V. Maximov, Yu. M. Shernyakov, A. F. Tsatsul'nikov, A. V. Lunev, A. V. Sakharov, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, P. S. Kop'ev, L. V. Asryan, Zh. I. Alferov, N. N. Ledentsov, D. Bimberg, A. O. Kosogov and P. Werner
J. Appl. Phys., 83, 5561 (1998)
- Temperature dependence of the threshold current density of a quantum dot laser
L. V. Asryan and R. A. Suris
IEEE J. Quantum Electron., 34, 841 (1998)
- Feasibility study on the application of the quantum disk to the gain-coupled distributed feedback laser
Susa, N.
IEEE J. Quantum Electron., 34, 1317 (1998)
- Low threshold quantum dot injection laser emitting at 1.9 μm
Ustinov, V.M. Zhukov, A.E. Egorov, A.Y. Kovsh, A.R. Zaitsev, S.V. Gordeev, N.Y. Kopchatov, V.I. Ledentsov, N.N. Tsatsulnikov, A.F. Volovik, B.V. Kopev, P.S. Alferov, Z.I. Ruvimov, S.S. Liliental-Weber, Z. Bimberg, D.
Electron. Lett., 34, 670 (1998)
- Longitudinal mode grouping in InGaAs/GaAs/AlGaAs quantum dot lasers: origin and means of control
O'Reilly, E.P. Onischenko, A.I. Avrutin, E.A. Bhattacharyya, D. Marsh, J.H.
Electron. Lett., 34, 2035 (1998)
- Emission spectra and mode structure of InAs/GaAs self-organized quantum dot
L. Harris, D. J. Mowbray, M. S. Skolnick, M. Hopkinson and G. Hill
Appl. Phys. Lett., 73, 969 (1998)
- Injection lasers with vertically aligned InP/GaInP quantum dots: Dependence of the threshold current on temperature and dot size
T. Riedl, E. Fehrenbacher, A. Hangleiter, M. K. Zundel and K. Eberl
Appl. Phys. Lett., 73, 3730 (1998)
- 1.3
D. L. Huffaker, G. Park, Z. Zou, O. B. Shchekin, and D. G. Deppe
Appl. Phys. Lett., 73, 2564 (1998)
- Red-light-emitting injection laser based on InP/GaInP self-assembled quantum dots
M. K. Zundel, N. Y. Jin-Phillipp, F. Phillipp, K. Eberl, T. Riedl, E. Fehrenbacher, and A. Hangleiter
Appl. Phys. Lett., 73, 1784 (1998)