1999 year
- Quantum-dot injection heterolaser with 3.3 W output power
A. R. Kovsh, D. A. Livshits, A. E. Zhukov, A. Yu. Egorov, M. V. Maksimov, V. M. Ustinov, I. S. Tarasov, N. N. Ledentsov, P. S. Kop'ev, Zh. I. Alferov, and D. Bimberg
Tech. Phys. Lettr., 25, 438 (1999)
- Role of thermal ejection of carriers in the burning of spatial holes in quantum dot lasers
L. V. Asryan and R. A. Suris
Semicond., 33, 981 (1999)
- Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands
B. V. Volovik, A. F. Tsatsul'nikov, D. A. Bedarev, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, N. N. Ledentsov, M. V. Maksimov, N. A. Maleev, Yu. G. Musikhin, A. A. Suvorova, V. M. Ustinov, P. S. Kop'ev, and Zh. I. Alferov
Semicond., 33, 901 (1999)
- Ultralow threshold laser using a single quantum dot and a microsphere cavity
Matthew Pelton and Yoshihisa Yamamoto
Phys. Rev. A 59, 2418 (1999)
- Optical characteristics of 1.24-μm InAs quantum-dot laser diodes
Lester, L.F. Stintz, A. Li, H. Newell, T.C. Pease, E.A. Fuchs, B.A. Malloy, K.J.
IEEE J. Phot. Technol. Lett., 11, 931 (1999)
- Temperature dependence of lasing characteristics for long-wavelength (1.3-μm) GaAs-based quantum-dot lasers
Park, G. Huffaker, D.L. Zou, Z. Shchekin, O.B. Deppe, D.G.
IEEE J. Phot. Technol. Lett., 11, 303 (1999)
- Gain and linewidth enhancement factor in InAs quantum-dot laser diodes
Newell, T.C. Bossert, D.J. Stintz, A. Fuchs, B. Malloy, K.J. Lester, L.F.
IEEE J. Phot. Technol. Lett., 11, 1527 (1999)
- 1.3-μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mA
Mukai, K. Nakata, Y. Otsubo, K. Sugawara, M. Yokoyama, N. Ishikawa, H.
IEEE J. Phot. Technol. Lett., 11, 1205 (1999)
- Effect of GaAs(0 0 1) surface misorientation on the emission from MBE grown InAs quantum dots
I. V. Kudryashov, , V. P. Evtikhiev, V. E. Tokranov, E. Yu. Kotel'nikov, A. K. Kryganovskii and A. N. Titkov
J. Crys.Growth, 202, 1158 (1999)
- Characteristics of the InAs quantum dots MBE grown on the vicinal GaAs(0 0 1) surfaces misoriented to the [0 1 0] direction
V. P. Evtikhiev, V. E. Tokranov, A. K. Kryganovskii, A. M. Boiko, R. A. Suris and A. N. Titkov
J. Crys. Growth, 202, 1154 (1999)
- 1.3 /spl mu/m GaAs-based laser using quantum dots obtained by activated spinodal decomposition
Shernyakov, Yu.M. Bedarev, D.A. Kondrat'eva, E.Yu. Kop'ev, P.S. Kovsh, A.R. Maleev, N.A. Maximov, M.V. Mikhrin, S.S. Tsatsul'nikov, A.F. Ustinov, V.M. Volovik, B.V. Zhukov, A.E. Alferov, Zh.I. Ledentsov, N.N. Bimberg, D.
Electron. Lett., 35, 898 (1999)
- Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well
Liu, G. Stintz, A. Li, H. Malloy, K.J. Lester, L.F.
Electron. Lett., 35, 1163 (1999)
- 3.5 W CW operation of quantum dot laser
Kovsh, A.R. Zhukov, A.E. Livshits, D.A. Egorov, A.Y. Ustinov, V.M. Maximov, M.V. Musikhin, Yu.G. Ledentsov, N.N. Kop'ev, P.S. Alferov, Zh.I. Bimberg, D.
Electron. Lett., 35, 1161 (1999)
- Temperature characteristics of threshold currents of columnar-shaped self-assembled InGaAs/GaAs quantum-dot lasers: Influence of nonradiative recombination centers
Mitsuru Sugawara, Kohki Mukai, and Yoshiaki Nakata
Appl. Phys. Lett., 75, 656 (1999)
- Gain characteristics of InAs/GaAs self-organized quantum-dot lasers
L. Harris, A. D. Ashmore, D. J. Mowbray, M. S. Skolnick, M. Hopkinson, G. Hill, and J. Clark
Appl. Phys. Lett., 75, 3512 (1999)
- Spectral analysis of InGaAs/GaAs quantum-dot lasers
P. M. Smowton, E. J. Johnston, S. V. Dewar, P. J. Hulyer, H. D. Summers, A. Patanè, A. Polimeni, and M. Henini
Appl. Phys. Lett., 75, 3267 (1999)
- Spectral analysis of InGaAs/GaAs quantum-dot lasers
P. M. Smowton, E. J. Johnston, S. V. Dewar, P. J. Hulyer, H. D. Summers, A. Patanè, A. Polimeni, and M. Henini
Appl. Phys. Lett., 75, 2169 (1999)
- Bias-controlled wavelength switching in coupled-cavity In0.4Ga0.6As/GaAs self-organized quantum dot lasers
Weidong Zhou, Omar Qasaimeh, Jamie Phillips, Sanjay Krishna, and Pallab Bhattacharya
Appl. Phys. Lett., 74, 783 (1999)
- High-performance GaInAs/GaAs quantum-dot lasers based on a single active layer
F. Schäfer, J. P. Reithmaier, and A. Forchel
Appl. Phys. Lett., 74, 2915 (1999)
- InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3
V. M. Ustinov, N. A. Maleev, A. E. Zhukov, A. R. Kovsh, A. Yu. Egorov, A. V. Lunev, B. V. Volovik, I. L. Krestnikov, Yu. G. Musikhin, N. A. Bert, P. S. Kop'ev, Zh. I. Alferov, N. N. Ledentsov and D. Bimberg
Appl. Phys. Lett., 74, 2815 (1999)
- Light emission spectra of columnar-shaped self-assembled InGaAs/GaAs quantum-dot lasers: Effect of homogeneous broadening of the optical gain on lasing characteristics
Mitsuru Sugawara, Kohki Mukai, and Yoshiaki Nakata
Appl. Phys. Lett., 74, 1561 (1999)
- Spatial hole burning and multimode generation threshold in quantum-dot lasers
L. V. Asryan and R. A. Suris
Appl. Phys. Lett., 74, 1215 (1999)
- Quantum dot lasers: recent progress in theoretical understanding and demonstration of high-output-power operation
M. Grundmann , F. Heinrichsdorff , C. Ribbat , M.-H. Mao , D. Bimberg
Appl. Phys. B, 69, 413 (1999)