Threshold characteristic
- Engineering the electromagnetic vacuum for controlling light with light in a photonic-band-gap microchip
R. Wang and S. John
Phys. Rev. A 70, 043805 (2004)
- Resonance fluorescence in photonic band gap waveguide architectures: Engineering the vacuum for all-optical switching
M. Florescu and S. John
Phys. Rev. A 69, 053810 (2004)
- Theory of threshold characteristics of quantum dot lasers: Effect of quantum dot parameter dispersion (Review)
L. V. Asryan and R. A. Suris
Int. J. High Speed Electron. Syst., 12, 111 (2002)
- 980 nm Quantum Dot Lasers with Very Small Threshold Current Densities
F. Klopf, J.P. Reithmaier, A. Forchel
Phys. Stat. Sol. (b), 224, 845 (2001)
- Gain Characteristics of Self-Assembled InAs/GaAs Quantum Dots
M. Arzberger, G. Böhm, M.C. Amann, G. Abstreiter
Phys. Stat. Sol. (b), 224, 827 (2001)
- Room-temperature operation of InAs quantum-dash lasers on InP (001)
Wang, R.H. Stintz, A. Varangis, P.M. Newell, T.C. Li, H. Malloy, K.J. Lester, L.F.
IEEE J. Phot. Technol. Lett., 13, 767 (2001)
- High-temperature operating 1.3-μm quantum-dot lasers for telecommunication applications
Klopf, F. Krebs, R. Reithmaier, J.P. Forchel, A.
IEEE J. Phot. Technol. Lett., 13, 764 (2001)
- Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers
Eliseev, P.G. Li, H. Liu, T. Newell, T.C. Lester, L.F. Malloy, K.J.
IEEE J. Select. Topics Quantum Electron., 7, 135 (2001)
- Low-threshold oxide-confined 1.3-μm quantum-dot laser
Gyoungwon Park Shchekin, O.B. Huffaker, D.L. Deppe, D.G.
IEEE J. Phot. Technol. Lett., 12, 230 (2000)
- Self-assembled In0.5Ga0.5As quantum-dot lasers with doped active region
Nien-Tze Yeh Jia-Ming Lee Tzer-En Nee Jen-Inn Chyi
IEEE J. Phot. Technol. Lett., 12, 1123 (2000)
- Lateral carrier confinement in miniature lasers using quantum dots
Kim, J.K. Naone, R.L. Coldren, L.A.
IEEE J. Select. Topics Quantum Electron., 6, 504 (2000)
- Performance and physics of quantum-dot lasers with self-assembled columnar-shaped and 1.3-μm emitting InGaAs quantum dots
Sugawara, M. Mukai, K. Nakata, Y. Otsubo, K. Ishilkawa, H.
IEEE J. Select. Topics Quantum Electron., 6, 462 (2000)
- Continuous-wave low-threshold performance of 1.3-μm InGaAs-GaAs quantum-dot lasers
Huffaker, D.L. Park, G. Zou, Z. Shchekin, O.B. Deppe, D.G.
IEEE J. Select. Topics Quantum Electron., 6, 452 (2000)
- Quantum-dot heterostructure lasers
Ledentsov, N.N. Grundmann, M. Heinrichsdorff, F. Bimberg, D. Ustinov, V.M. Zhukov, A.E. Maximov, M.V. Alferov, Zh.I. Lott, J.A.
IEEE J. Select. Topics Quantum Electron., 6, 439 (2000)
- High-speed modulation and switching characteristics of In(Ga)As-Al(Ga)As self-organized quantum-dot lasers
Bhattacharya, P. Klotzkin, D. Qasaimeh, O. Zhou, W. Krishna, S. Zhu, D.
IEEE J. Select. Topics Quantum Electron., 6, 426 (2000)
- The influence of quantum-well composition on the performance of quantum dot lasers using InAs-InGaAs dots-in-a-well (DWELL) structures
Liu, G.T. Stintz, A. Li, H. Newell, T.C. Gray, A.L. Varangis, P.M. Malloy, K.J. Lester, L.F.
IEEE J. Quantum Electron., 36, 1272 (2000)
- Quantum-dot injection heterolaser with 3.3 W output power
A. R. Kovsh, D. A. Livshits, A. E. Zhukov, A. Yu. Egorov, M. V. Maksimov, V. M. Ustinov, I. S. Tarasov, N. N. Ledentsov, P. S. Kop'ev, Zh. I. Alferov, and D. Bimberg
Tech. Phys. Lettr., 25, 438 (1999)
- Role of thermal ejection of carriers in the burning of spatial holes in quantum dot lasers
L. V. Asryan and R. A. Suris
Semicond., 33, 981 (1999)
- Optical characteristics of 1.24-μm InAs quantum-dot laser diodes
Lester, L.F. Stintz, A. Li, H. Newell, T.C. Pease, E.A. Fuchs, B.A. Malloy, K.J.
IEEE J. Phot. Technol. Lett., 11, 931 (1999)
- Temperature dependence of lasing characteristics for long-wavelength (1.3-μm) GaAs-based quantum-dot lasers
Park, G. Huffaker, D.L. Zou, Z. Shchekin, O.B. Deppe, D.G.
IEEE J. Phot. Technol. Lett., 11, 303 (1999)
- Gain and linewidth enhancement factor in InAs quantum-dot laser diodes
Newell, T.C. Bossert, D.J. Stintz, A. Fuchs, B. Malloy, K.J. Lester, L.F.
IEEE J. Phot. Technol. Lett., 11, 1527 (1999)
- 1.3-μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mA
Mukai, K. Nakata, Y. Otsubo, K. Sugawara, M. Yokoyama, N. Ishikawa, H.
IEEE J. Phot. Technol. Lett., 11, 1205 (1999)
- 1.3 /spl mu/m GaAs-based laser using quantum dots obtained by activated spinodal decomposition
Shernyakov, Yu.M. Bedarev, D.A. Kondrat'eva, E.Yu. Kop'ev, P.S. Kovsh, A.R. Maleev, N.A. Maximov, M.V. Mikhrin, S.S. Tsatsul'nikov, A.F. Ustinov, V.M. Volovik, B.V. Zhukov, A.E. Alferov, Zh.I. Ledentsov, N.N. Bimberg, D.
Electron. Lett., 35, 898 (1999)
- Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well
Liu, G. Stintz, A. Li, H. Malloy, K.J. Lester, L.F.
Electron. Lett., 35, 1163 (1999)
- 3.5 W CW operation of quantum dot laser
Kovsh, A.R. Zhukov, A.E. Livshits, D.A. Egorov, A.Y. Ustinov, V.M. Maximov, M.V. Musikhin, Yu.G. Ledentsov, N.N. Kop'ev, P.S. Alferov, Zh.I. Bimberg, D.
Electron. Lett., 35, 1161 (1999)
- Temperature characteristics of threshold currents of columnar-shaped self-assembled InGaAs/GaAs quantum-dot lasers: Influence of nonradiative recombination centers
Mitsuru Sugawara, Kohki Mukai, and Yoshiaki Nakata
Appl. Phys. Lett., 75, 656 (1999)
- Gain characteristics of InAs/GaAs self-organized quantum-dot lasers
L. Harris, A. D. Ashmore, D. J. Mowbray, M. S. Skolnick, M. Hopkinson, G. Hill, and J. Clark
Appl. Phys. Lett., 75, 3512 (1999)
- Spectral analysis of InGaAs/GaAs quantum-dot lasers
P. M. Smowton, E. J. Johnston, S. V. Dewar, P. J. Hulyer, H. D. Summers, A. Patanè, A. Polimeni, and M. Henini
Appl. Phys. Lett., 75, 3267 (1999)
- Spectral analysis of InGaAs/GaAs quantum-dot lasers
P. M. Smowton, E. J. Johnston, S. V. Dewar, P. J. Hulyer, H. D. Summers, A. Patanè, A. Polimeni, and M. Henini
Appl. Phys. Lett., 75, 2169 (1999)
- Bias-controlled wavelength switching in coupled-cavity In0.4Ga0.6As/GaAs self-organized quantum dot lasers
Weidong Zhou, Omar Qasaimeh, Jamie Phillips, Sanjay Krishna, and Pallab Bhattacharya
Appl. Phys. Lett., 74, 783 (1999)
- High-performance GaInAs/GaAs quantum-dot lasers based on a single active layer
F. Schäfer, J. P. Reithmaier, and A. Forchel
Appl. Phys. Lett., 74, 2915 (1999)
- InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3
V. M. Ustinov, N. A. Maleev, A. E. Zhukov, A. R. Kovsh, A. Yu. Egorov, A. V. Lunev, B. V. Volovik, I. L. Krestnikov, Yu. G. Musikhin, N. A. Bert, P. S. Kop'ev, Zh. I. Alferov, N. N. Ledentsov and D. Bimberg
Appl. Phys. Lett., 74, 2815 (1999)
- Light emission spectra of columnar-shaped self-assembled InGaAs/GaAs quantum-dot lasers: Effect of homogeneous broadening of the optical gain on lasing characteristics
Mitsuru Sugawara, Kohki Mukai, and Yoshiaki Nakata
Appl. Phys. Lett., 74, 1561 (1999)
- Spatial hole burning and multimode generation threshold in quantum-dot lasers
L. V. Asryan and R. A. Suris
Appl. Phys. Lett., 74, 1215 (1999)
- Quantum dot lasers: recent progress in theoretical understanding and demonstration of high-output-power operation
M. Grundmann , F. Heinrichsdorff , C. Ribbat , M.-H. Mao , D. Bimberg
Appl. Phys. B, 69, 413 (1999)
- Operating characteristics and their anisotropy in a high-power laser (1.5 W, 300 K) with a quantum-dot active region
Yu. M. Shernyakov, A. Yu. Egorov, B. V. Volovik, A. E. Zhukov, A. R. Kovsh, A. V. Lunev, N. N. Ledentsov, M. V. Maksimov, A. V. Sakharov, V. M. Ustinov, Zhen Zhao, P. S. Kop'ev, Zh. I. Alferov, and D. Bimberg
Tech. Phys. Lettr., 24, 351 (1998)
- Quantum dot heterostructures: fabrication, properties, lasers (Review)
N. N. Ledentsov, V. M. Ustinov, V. A. Shchukin., P. S. Kop'ev, Zh. I. Alferov and D. Bimberg
Semicond., 32, 343 (1998)
- Continuous stimulated emission at T = 293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(001) surfaces misoriented in the [010] direction in the active region
V. P. Evtikhiev, I. V. Kudryashov, E. Yu. Kotel'nikov, V. E. Tokranov, A. N. Titkov, I. S. Tarasov, and Zh. I. Alferov
Semicond., 32, 1323 (1998)
- High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laser
M. V. Maximov, Yu. M. Shernyakov, A. F. Tsatsul'nikov, A. V. Lunev, A. V. Sakharov, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, P. S. Kop'ev, L. V. Asryan, Zh. I. Alferov, N. N. Ledentsov, D. Bimberg, A. O. Kosogov and P. Werner
J. Appl. Phys., 83, 5561 (1998)
- Temperature dependence of the threshold current density of a quantum dot laser
L. V. Asryan and R. A. Suris
IEEE J. Quantum Electron., 34, 841 (1998)
- Feasibility study on the application of the quantum disk to the gain-coupled distributed feedback laser
Susa, N.
IEEE J. Quantum Electron., 34, 1317 (1998)
- Low threshold quantum dot injection laser emitting at 1.9 μm
Ustinov, V.M. Zhukov, A.E. Egorov, A.Y. Kovsh, A.R. Zaitsev, S.V. Gordeev, N.Y. Kopchatov, V.I. Ledentsov, N.N. Tsatsulnikov, A.F. Volovik, B.V. Kopev, P.S. Alferov, Z.I. Ruvimov, S.S. Liliental-Weber, Z. Bimberg, D.
Electron. Lett., 34, 670 (1998)
- Emission spectra and mode structure of InAs/GaAs self-organized quantum dot
L. Harris, D. J. Mowbray, M. S. Skolnick, M. Hopkinson and G. Hill
Appl. Phys. Lett., 73, 969 (1998)
- Injection lasers with vertically aligned InP/GaInP quantum dots: Dependence of the threshold current on temperature and dot size
T. Riedl, E. Fehrenbacher, A. Hangleiter, M. K. Zundel and K. Eberl
Appl. Phys. Lett., 73, 3730 (1998)
- 1.3
D. L. Huffaker, G. Park, Z. Zou, O. B. Shchekin, and D. G. Deppe
Appl. Phys. Lett., 73, 2564 (1998)
- Red-light-emitting injection laser based on InP/GaInP self-assembled quantum dots
M. K. Zundel, N. Y. Jin-Phillipp, F. Phillipp, K. Eberl, T. Riedl, E. Fehrenbacher, and A. Hangleiter
Appl. Phys. Lett., 73, 1784 (1998)
- Quantum-dot cw heterojunction injection laser operating at room temperature with an output power of 1 W
Yu. M. Shernyakov, A. Yu. Egorov, A. E. Zhukov, S. V. Zatsev, A. R. Kovsh, I. L. Krestnikov, A. V. Lunev, N. N. Ledentsov, M. V. Maksimov, A. V. Sakharov, V. M. Ustinov, Chao Chen, P. S. Kop'ev, Zh. I. Alferov, and D. Bimberg
Tech. Phys. Lettr., 23, 149 (1997)
- Negative Characteristic Temperature of InGaAs Quantum Dot Injection Laser
Alexey E. Zhukov, Victor M. Ustinov, Anton Yu. Egorov, Alexey R. Kovsh, Andrey F. Tsatsulnikov, Nikolay N. Ledentsov, Sergey V. Zaitsev, Nikita Yu. Gordeev, Peter S. Kopèv and Zhores I. Alferov
Jap. J. Appl. Phys., 36, 4216 (1997)
- Carrier capture times in quantum-well, -wire, and -box distributed-feedback lasers characterized by dynamic lasing emission measurements
Jian Wang Griesinger, U.A. Geiger, M. Scholz, F. Schweizer, H.C.
IEEE J. Select. Topics Quantum Electron., 3, 223 (1997)
- InGaAs-GaAs quantum-dot lasers
Bimberg, D. Kirstaedter, N. Ledentsov, N.N. Alferov, Zh.I. Kop'ev, P.S. Ustinov, V.M.
IEEE J. Select. Topics Quantum Electron., 3, 196 (1997)
- Lasing characteristics of self-formed quantum-dot lasers with multistacked dot layer
Shoji, H. Nakata, Y. Mukai, K. Sugiyama, Y. Sugawara, M. Yokoyama, N. Ishikawa, H.
IEEE J. Select. Topics Quantum Electron., 3, 188 (1997)
- Quantum-dot cascade laser: proposal for an ultralow-threshold semiconductor laser
Wingreen, N.S. Stafford, C.A.
IEEE J. Quantum Electron., 33, 1170 (1997)
- Characteristic temperature of quantum dot laser
L. V. Asryan and R. A. Suris
Electron. Lett., 33, 1871 (1997)
- Vertical cavity lasers based on vertically coupled quantum dots
Lott, J.A. Ledentsov, N.N. Ustinov, V.M. Egorov, A.Yu. Zhukov, A.E. Kop'ev, P.S. Alferov, Zh.I. Bimberg, D.
Electron. Lett., 33, 1150 (1997)
- Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition
F. Heinrichsdorff, M.-H. Mao, N. Kirstaedter, A. Krost, D. Bimberg, A. O. Kosogov and P. Werner
Appl. Phys. Lett., 11, 22 (1997)
- Inhomogeneous line broadening and the threshold current density of a semiconductor quantum dot laser
L. V. Asryan and R. A. Suris
Semicond. Sci. Technol., 11, 554, (1996)
- Realization of dot DFB lasers
Griesinger, U.A. Schweizer, H. Kronmuller, S. Geiger, M. Ottenwalder, D. Scholz, F. Pilkuhn, M.H.
IEEE J. Phot. Technol. Lett., 8, 587 (1996)
- Emission dynamics of dot and wire DFB lasers
Jian Wang Griesinger, U.A. Geiger, M. Ottenwaelder, D. Scholz, F. Schweizer, H.
IEEE J. Phot. Technol. Lett., 8, 1585 (1996)
- Room temperature CW operation at the ground state of self-formed quantum dot lasers with multi-stacked dot layer
Shoji, H. Nakata, Y. Mukai, K. Sugiyama, Y. Sugawara, M. Yokoyama, N. Ishikawa, H.
Electron. Lett., 32, 2023 (1996)
- Room temperature lasing from InGaAs quantum dots
Mirin, R. Gossard, A. Bowers, J.
Electron. Lett., 32, 1732 (1996)
- Room-temperature operation of In0.4Ga0.6As/GaAs self-organised quantum dot lasers
Kamath, K. Bhattacharya, P. Sosnowski, T. Norris, T. Phillips, J.
Electron. Lett., 32, 1374 (1996)
- Quantum dot laser: gain spectrum inhomogeneous broadening and threshold current
Robert A. Suris, Levon V. Asryan
Proc. SPIE's Int. Symp. PHOTONICS WEST, 2399, 433 (1995)
- Low threshold, large T0 injection laser emission from (InGa)As quantum dots
N. Kirstädter, N. N. Ledentsov, M. Grundmann, D. Bimberg, V. M. Ustinov, S. S. Ruvimov, M. V. Maximov, P. S. Kop'ev, Zh. I. Alferov, U. Richter, P. Werner, U. Gösele, and J. Heydenreich,
Electron. Lettr., 30, 1416 (1994)
- Lasing action of Ga0.67In0.33As/GaInAsP/InP tensile-strained quantum-box laser
Hirayama, H. Matsunaga, K. Asada, M. Suematsu, Y.
Electron. Lett., 30, 142 (1994)
- Threshold current density of GaInAsP/InP quantum-box lasers
Miyamoto, Y. Miyake, Y. Asada, M. Suematsu, Y.
IEEE J. Quantum Electron., 25, 2001 (1989)
- Gain and the threshold of three-dimensional quantum-box lasers
Asada, M. Miyamoto, Y. Suematsu, Y.
IEEE J. Quantum Electron., 22, 1915 (1986)
- Multidimensional quantum well laser and temperature dependence of its threshold current
Y. Arakawa and H. Sakaki
Appl. Phys. Lett., 40, 939 (1982)
- Theory of threshold characteristics of semiconductor quantum dot lasers (Review)
L. V. Asryan and R. A. Suris
Semicond., 38, 1 (2004)