Electroluminescence
- Optical and morphological properties of GaN quantum dots doped with Tm
T. Andreev, Y. Hori, X. Biquard, E. Monroy, D. Jalabert, A. Farchi, M. Tanaka, O. Oda, Le Si Dang, and B. Daudin
Phys. Rev. B 71, 115310 (2005)
- Modulation of the luminescence spectra of InAs self-assembled quantum dots by resonant tunneling through a quantum well
A. Patanè, A. Polimeni, L. Eaves, P. C. Main, M. Henini, A. E. Belyaev, Yu. V. Dubrovskii, P. N. Brounkov, E. E. Vdovin, Yu. N. Khanin and G. Hill
Phys. Rev. B 62, 13595 (2000)
- Carrier thermalization within a disordered ensemble of self-assembled quantum dots
A. Patanè, A. Levin, A. Polimeni, L. Eaves, P. C. Main, M. Henini and G. Hill
Phys. Rev. B 62, 11084 (2000)
- Continuous stimulated emission at T = 293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(001) surfaces misoriented in the [010] direction in the active region
V. P. Evtikhiev, I. V. Kudryashov, E. Yu. Kotel'nikov, V. E. Tokranov, A. N. Titkov, I. S. Tarasov, and Zh. I. Alferov
Semicond., 32, 1323 (1998)