1993 year
- Graded electronic structure in a 3 nm strained Ge40Si60 quantum well
P. E. Batson and J. F. Morar
Phys. Rev. Lett. 71, 609 (1993)
- Interference phenomena due to intervalley mixing effects in the multivalley double-barrier structures
Jih
Phys. Rev. B 48, 8040 (1993)
- Imaging defect formation in the template growth of NiSi2/Si(111): An application of quantum size microscopy
J. A. Kubby, Y. R. Wang, and W. J. Greene
Phys. Rev. B 48, 4473 (1993)
- Confinement and zone folding in the E1-like optical transitions of Ge/Si quantum wells and superlattices
P. A. M. Rodrigues, M. A. Araújo Silva, F. Cerdeira and J. C. Bean
Phys. Rev. B 48, 18024 (1993)
- In-plane valence-band nonparabolicity and anisotropy in strained Si-Ge quantum wells
A. Zaslavsky, T. P. Smith, III, D. A. Grützmacher, S. Y. Lin, T. O. Sedgwick and D. A. Syphers
Phys. Rev. B 48, 15112 (1993)
- Electrical and physical properties of high-Ge-content Si/SiGe p-type quantum wells
R. A. Kiehl, P. E. Batson, J. O. Chu, D. C. Edelstein, F. F. Fang, B. Laikhtman, D. R. Lombardi, W. T. Masselink, B. S. Meyerson, J. J. Nocera, A. H. Parsons, C. L. Stanis, and J. C. Tsang
Phys. Rev. B 48, 11946 (1993)
- Theoretical study of carrier confinement in a-Si
Z. Q. Li and W. Pötz
Phys. Rev. B 47, 6509 (1993)
- Electron drift mobility in a Si-Ge1-xSix quantum well at low temperatures
J. Tutor, J. A. Bermúdez and F. Comas
Phys. Rev. B 47, 3690 (1993)
- Photoluminescence study of vertical transport in Si1-xGex/Si heterostructures
L. C. Lenchyshyn, M. L. W. Thewalt, J. C. Sturm and X. Xiao
Phys. Rev. B 47, 16659 (1993)
- Photoluminescence mechanisms in thin Si1-xGex quantum wells
L. C. Lenchyshyn, M. L. W. Thewalt, D. C. Houghton, J.
Phys. Rev. B 47, 16655 (1993)
- Intersubband transitions in a p-type delta -doped SiGe/Si quantum well
S. K. Chun, D. S. Pan, and K. L. Wang
Phys. Rev. B 47, 15638 (1993)
- Theoretical hole mobility in a narrow Si/SiGe quantum well
B. Laikhtman and R. A. Kiehl
Phys. Rev. B 47, 10515 (1993)