1993 year
- Ultrathin Au films on W(110): Epitaxial growth and electronic structure
H. Knoppe and E. Bauer
Phys. Rev. B 48, 5621 (1993)
- Imaging defect formation in the template growth of NiSi2/Si(111): An application of quantum size microscopy
J. A. Kubby, Y. R. Wang, and W. J. Greene
Phys. Rev. B 48, 4473 (1993)
- Competing spin exchange interactions in Zn1-xMnxSe/Zn1-yFeySe multiple-quantum-well structures
L. P. Fu, W. Y. Yu, A. Petrou, J. Warnock and B. T. Jonker
Phys. Rev. B 48, 18272 (1993)
- Direct determination of the band discontinuities in InxGa1-xP/InyAl1-yP multiple quantum wells
D. Patel, M. J. Hafich, G. Y. Robinson, and C. S. Menoni
Phys. Rev. B 48, 18031 (1993)
- d-like quantum-well states in (111)-oriented metallic overlayers on Fe and Co
D. Hartmann, W. Weber, A. Rampe, S. Popovic, and G. Güntherodt
Phys. Rev. B 48, 16837 (1993)
- Inverse parabolic quantum wells grown by molecular-beam epitaxy using digital and analog techniques
W. Q. Chen, S. M. Wang, T. G. Andersson, and J. Thordson
Phys. Rev. B 48, 14264 (1993)
- Electrical and physical properties of high-Ge-content Si/SiGe p-type quantum wells
R. A. Kiehl, P. E. Batson, J. O. Chu, D. C. Edelstein, F. F. Fang, B. Laikhtman, D. R. Lombardi, W. T. Masselink, B. S. Meyerson, J. J. Nocera, A. H. Parsons, C. L. Stanis, and J. C. Tsang
Phys. Rev. B 48, 11946 (1993)
- Optical and structural properties of metalorganic-vapor-phase-epitaxy-grown InAs quantum wells and quantum dots in InP
R. Leonelli, C. A. Tran, J. L. Brebner, J. T. Graham, R. Tabti, R. A. Masut and S. Charbonneau
Phys. Rev. B 48, 11135 (1993)
- Absorption saturation of intersubband optical transitions in GaAs/AlxGa1-xAs multiple quantum wells
Da
Phys. Rev. B 47, 6755 (1993)
- Band offsets of Ga0.5In0.5P/GaAs single quantum wells from pressure-induced type-II transitions
M. Leroux, M. L. Fille, B. Gil, J. P. Landesman and J. C. Garcia
Phys. Rev. B 47, 6465 (1993)
- Band offsets and transitivity of In1-xGaxAs/In1-yAlyAs/InP heterostructures
J. Böhrer, A. Krost, T. Wolf, and D. Bimberg
Phys. Rev. B 47, 6439 (1993)
- Optical properties of thin, strained layers of GaAsxP1-x grown on (111)-oriented GaP
M. Gerling, G. Paulsson, M.
Phys. Rev. B 47, 6408 (1993)
- High-pressure photoluminescence study of GaAs/GaAs1-xPx strained multiple quantum wells
W. Shan, S. J. Hwang, J. J. Song, H. Q. Hou and C. W. Tu
Phys. Rev. B 47, 3765 (1993)
- Extended, monolayer flat islands and exciton dynamics in Ga0.47In0.53As/InP quantum-well structures
X. Liu, S. Nilsson, L. Samuelson, W. Seifert and P. L. Souza
Phys. Rev. B 47, 2203 (1993)
- Photoluminescence mechanisms in thin Si1-xGex quantum wells
L. C. Lenchyshyn, M. L. W. Thewalt, D. C. Houghton, J.
Phys. Rev. B 47, 16655 (1993)
- Photoluminescence under pressure of ultrathin AlAs layers grown on GaAs vicinal surfaces: A search for lateral confinement effects
B. Chastaingt, M. Leroux, G. Neu, N. Grandjean, C. Deparis, and J. Massies
Phys. Rev. B 47, 1292 (1993)