1993 year
- Selective exciton formation in thin GaAs/AlxGa1-xAs quantum wells
P. W. M. Blom, P. J. van Hall, C. Smit, J. P. Cuypers, and J. H. Wolter
Phys. Rev. Lett. 71, 3878 (1993)
- Influence of piezoelectric fields on Rydberg energies in (Ga,In)As-GaAs single quantum wells embedded in p-i-n structures
Pierre Bigenwald, Bernard Gil, and Philippe Boring
Phys. Rev. B 48, 9122 (1993)
- Magnetic-field-induced free electron and hole recombination in semimetallic AlxGa1-xSb/InAs quantum wells
Ikai Lo, W. C. Mitchel and J.
Phys. Rev. B 48, 9118 (1993)
- Excited states of shallow acceptors confined in GaAs/AlxGa1-xAs quantum wells
P. O. Holtz, Q. X. Zhao, A. C. Ferreira, B. Monemar, M. Sundaram, J. L. Merz, and A. C. Gossard
Phys. Rev. B 48, 8872 (1993)
- Diamagnetic shift and oscillator strength of two-dimensional excitons under a magnetic field in In0.53Ga0.47As/InP quantum wells
Mitsuru Sugawara, Niroh Okazaki, Takuya Fujii, and Susumu Yamazaki
Phys. Rev. B 48, 8848 (1993)
- Temperature sensitivity of Auger-recombination effects in compressively strained InxGa1-xAs/InxGa1-xAs1-yPy quantum-well lasers
Wayne W. Lui, Takayuki Yamanaka, Yuzo Yoshikuni, Shunji Seki, and Kiyoyuki Yokoyama
Phys. Rev. B 48, 8814 (1993)
- Piezoelectric-field effects on transition energies, oscillator strengths, and level widths in (111)B-grown (In,Ga)As/GaAs multiple quantum wells
R. A. Hogg, T. A. Fisher, A. R. K. Willcox, D. M. Whittaker, M. S. Skolnick, D. J. Mowbray, J. P. R. David, A. S. Pabla, G. J. Rees, R. Grey, J. Woodhead, J. L. Sanchez
Phys. Rev. B 48, 8491 (1993)
- Conduction-band and valence-band structures in strained In1-xGaxAs/InP quantum wells on (001) InP substrates
Mitsuru Sugawara, Niroh Okazaki, Takuya Fujii, and Susumu Yamazaki
Phys. Rev. B 48, 8102 (1993)
- Above-barrier resonant transitions in AlxGa1-xAs/AlAs/GaAs heterostructures
Marcello Colocci, Juan Martinez
Phys. Rev. B 48, 8089 (1993)
- Frequency-to-voltage converter based on Bloch oscillations in a capacitively coupled GaAs-GaxAl1-xAs quantum well
D. H. Dunlap, V. Kovanis, R. V. Duncan and J. Simmons
Phys. Rev. B 48, 7975 (1993)
- Photoluminescence excitation spectroscopy of Be-remotely-doped wide parabolic GaAs/AlxGa1-xAs quantum wells
J. H. Burnett, H. M. Cheong, W. Paul, P. F. Hopkins and A. C. Gossard
Phys. Rev. B 48, 7940 (1993)
- Comparison of 1s-2s exciton-energy splittings between (001) and (111) GaAs/AlxGa1-xAs quantum wells
Yasutomo Kajikawa
Phys. Rev. B 48, 7935 (1993)
- Magnetopolaron effect on shallow donors in GaAs
J.
Phys. Rev. B 48, 7910 (1993)
- Piezomodulated-reflectivity study of minibands in AlxGa1-xAs/GaAs superlattices
C. Parks, A. K. Ramdas, M. R. Melloch and L. R. Ram
Phys. Rev. B 48, 5413 (1993)
- Subband structures of strained AlSb/InAs/AlSb quantum wells
P. J. Lin
Phys. Rev. B 48, 5338 (1993)
- Magneto-optical studies of strain effects on the excitons in InxGa1-xAs/AlyGa1-yAs strained quantum wells
Weimin Zhou, Mitra Dutta, Doran D. Smith, J. Pamulapati, H. Shen, P. Newman and R. Sacks
Phys. Rev. B 48, 5256 (1993)
- Exciton line shapes of GaAs/AlAs multiple quantum wells
J. Humlícek, E. Schmidt, L. Bocánek, R. Svehla and K. Ploog
Phys. Rev. B 48, 5241 (1993)
- Doping-density dependence of photoluminescence in highly Si-doped GaAs/AlxGa1-xAs quantum wells from below to above the metallic limit
C. I. Harris,B. Monemar, H. Kalt and K. Köhler
Phys. Rev. B 48, 4687 (1993)
- Electron optical-phonon coupling in GaAs/AlxGa1-xAs quantum wells due to interface, slab, and half-space modes
G. Q. Hai, F. M. Peeters, and J. T. Devreese
Phys. Rev. B 48, 4666 (1993)
- Excitons in type-II quantum-dot systems: A comparison of the GaAs/AlAs and InAs/GaSb systems
J. M. Rorison
Phys. Rev. B 48, 4643 (1993)
- Resonant inelastic light scattering in remotely doped wide parabolic GaAs/AlxGa1-xAs quantum wells
J. H. Burnett, H. M. Cheong, R. M. Westervelt, W. Paul, P. F. Hopkins, M. Sundaram, and A. C. Gossard
Phys. Rev. B 48, 4524 (1993)
- Photoluminescence line shape associated with e-A0 acceptor-related recombination in GaAs-(Ga,Al)As quantum wells under applied electric field
Rosana B. Santiago, J. d
Phys. Rev. B 48, 4498 (1993)
- Linear and circular polarizations of exciton luminescence in GaAs/AlxGa1-xAs quantum wells
A. Frommer, E. Cohen, Arza Ron and L. N. Pfeiffer
Phys. Rev. B 48, 2803 (1993)
- Thermal quenching and retrapping effects in the photoluminescence of InyGa1-yAs/GaAs/AlxGa1-xAs multiple-quantum-well structures
M. Vening, D. J. Dunstan and K. P. Homewood
Phys. Rev. B 48, 2412 (1993)
- Far-infrared second-harmonic generation in GaAs/AlxGa1-xAs heterostructures: Perturbative and nonperturbative response
W. W. Bewley, C. L. Felix, J. J. Plombon, M. S. Sherwin, M. Sundaram, P. F. Hopkins, and A. C. Gossard
Phys. Rev. B 48, 2376 (1993)
- Enhancement of the in-plane effective mass of electrons in modulation-doped InxGa1-xAs quantum wells due to confinement effects
G. Hendorfer, M. Seto, H. Ruckser, W. Jantsch, M. Helm, G. Brunthaler, W. Jost, H. Obloh, K. Köhler and D. J. As
Phys. Rev. B 48, 2328 (1993)
- Quantum-beat spectroscopy of the Zeeman splitting of heavy- and light-hole excitons in GaAs/AlxGa1-xAs quantum wells
O. Carmel, H. Shtrikman, and I. Bar
Phys. Rev. B 48, 1955 (1993)
- Intervalley scattering time in type-II AlxGa1-xAs/AlAs multiple quantum wells
S. Charbonneau, Jeff. F. Young, and P. T. Coleridge
Phys. Rev. B 48, 1932 (1993)
- Carrier-carrier scattering: An experimental comparison of bulk GaAs and GaAs/AlxGa1-xAs quantum wells
J. A. Kash
Phys. Rev. B 48, 18336 (1993)
- Direct determination of the band discontinuities in InxGa1-xP/InyAl1-yP multiple quantum wells
D. Patel, M. J. Hafich, G. Y. Robinson, and C. S. Menoni
Phys. Rev. B 48, 18031 (1993)
- Intrinsic electron mobility in narrow Ga0.47In0.53As quantum wells
Sanghamitra Mukhopadhyay and B. R. Nag
Phys. Rev. B 48, 17960 (1993)
- Spin-splitting renormalization in the neutral dense magnetoplasma in InxGa1-xAs/InP quantum wells
L. V. Butov, V. D. Kulakovskii and A. Forchel
Phys. Rev. B 48, 17933 (1993)
- Optical and transport properties of piezoelectric [111]-oriented strained Ga1-xInxSb/GaSb quantum wells
S. L. Wong, R. W. Martin, M. Lakrimi, R. J. Nicholas, T
Phys. Rev. B 48, 17885 (1993)
- Optical properties of a high-quality (311)-oriented GaAs/Al0.33Ga0.67As single quantum well
O. Brandt, K. Kanamoto, Y. Tokuda, N. Tsukada, O. Wada and J. Tanimura
Phys. Rev. B 48, 17599 (1993)
- Influence of exciton-exciton interactions on the coherent optical response in GaAs quantum wells
K. Bott, O. Heller, D. Bennhardt, S. T. Cundiff, P. Thomas, E. J. Mayer, G. O. Smith, R. Eccleston, J. Kuhl and K. Ploog
Phys. Rev. B 48, 17418 (1993)
- Homogeneous-linewidth dependence of resonant Raman scattering in GaAs quantum wells
A. J. Shields, G. O. Smith, E. J. Mayer, R. Eccleston, J. Kuhl, M. Cardona, and K. Ploog
Phys. Rev. B 48, 17338 (1993)
- Resonant electron
J.
Phys. Rev. B 48, 17243 (1993)
- Low-temperature galvanomagnetic transport of the two-dimensional electron gas in GaAs quantum wells
P. K. Ghosh and D. Chattopadhyay
Phys. Rev. B 48, 17177 (1993)
- Exciton confinement in GaAs quantum barriers
F. Martelli, M. Capizzi, A. Frova, A. Polimeni, F. Sarto, M. R. Bruni and M. G. Simeone
Phys. Rev. B 48, 1643 (1993)
- Carrier-induced localization in In-Ga-As/In-Ga-As-P separate-confinement quantum-well structures
G. Fuchs, J. Hörer, A. Hangleiter and A. Rudra
Phys. Rev. B 48, 15175 (1993)
- Interband spectroscopy of a quasi-three-dimensional electron gas in wide parabolic (Al,Ga)As quantum wells
M. Fritze, W. Chen,A. V. Nurmikko
Phys. Rev. B 48, 15103 (1993)
- Radiative lifetimes, quasi-Fermi-levels, and carrier densities in GaAs-(Ga,Al)As quantum-well photoluminescence under steady-state excitation conditions
Luiz E. Oliveira and M. de Dios
Phys. Rev. B 48, 15092 (1993)
- Optical properties of Ga0.8In0.2As/GaAs surface quantum wells
J. Dreybrodt, A. Forchel, and J. P. Reithmaier
Phys. Rev. B 48, 14741 (1993)
- Hot-carrier cooling in GaAs: Quantum wells versus bulk
Y. Rosenwaks, M. C. Hanna, D. H. Levi, D. M. Szmyd, R. K. Ahrenkiel, and A. J. Nozik
Phys. Rev. B 48, 14675 (1993)
- Quantum-well states of InAs/AlSb resonant-tunneling diodes
Timothy B. Boykin, R. E. Carnahan and R. J. Higgins
Phys. Rev. B 48, 14232 (1993)
- Energy levels of a hydrogenic impurity in GaAs/Ga1-xAlxAs multiple-quantum-well structures with narrow barriers in a magnetic field
N. Nguyen, J. X. Zang, R. Ranganathan, B. D. McCombe, and M. L. Rustgi
Phys. Rev. B 48, 14226 (1993)
- Electronic states of (001) and (311) AlAs/GaAs quantum wells
D. A. Contreras
Phys. Rev. B 48, 12319 (1993)
- Reflectivity of two-dimensional polaritons in GaAs quantum wells
Vivek Srinivas, Yung Jui Chen and Colin E. C. Wood
Phys. Rev. B 48, 12300 (1993)
- Direct-to-indirect energy-gap transition in strained GaxIn1-xAs/InP quantum wells
P. Michler, A. Hangleiter, A. Moritz, G. Fuchs, V. Härle, and F. Scholz
Phys. Rev. B 48, 11991 (1993)
- Direct measurements of many-body effects on free-carrier
Peter Brockmann, Jeff F. Young, P. Hawrylak and H. M. van Driel
Phys. Rev. B 48, 11423 (1993)
- Optical and structural properties of metalorganic-vapor-phase-epitaxy-grown InAs quantum wells and quantum dots in InP
R. Leonelli, C. A. Tran, J. L. Brebner, J. T. Graham, R. Tabti, R. A. Masut and S. Charbonneau
Phys. Rev. B 48, 11135 (1993)
- Exciton effects in sequential resonant tunneling of photocarriers in GaAs/AlAs multiple quantum wells
Harald Schneider, Joachim Wagner and Klaus Ploog
Phys. Rev. B 48, 11051 (1993)
- Consequences of subband nonparabolicity on intersubband excitations in p-doped GaAs/AlxGa1-xAs quantum wells
M. Kirchner, C. Schüller, J. Kraus, G. Schaack, K. Panzlaff and G. Weimann
Phys. Rev. B 47, 9706 (1993)
- Transient resonance Rayleigh scattering from electronic states in disordered systems: Excitons in GaAs/AlxGa1-xAs multiple-quantum-well structures
H. Stolz, D. Schwarze, W. von der Osten and G. Weimann
Phys. Rev. B 47, 9669 (1993)
- Exciton dynamics in InxGa1-xAs/GaAs quantum-well heterostructures: Competition between capture and thermal emission
G. Bacher, C. Hartmann, H. Schweizer, T. Held, G. Mahler and H. Nickel
Phys. Rev. B 47, 9545 (1993)
- Role of interface optical phonons in cooling hot carriers in GaAs-AlAs quantum wells
D. Y. Oberli, G. Böhm, and G. Weimann
Phys. Rev. B 47, 7630 (1993)
- Interband transitions in InxGa1-xAs/In0.52Al0.48As single quantum wells studied by room-temperature modulation spectroscopy
A. Dimoulas, J. Leng, K. P. Giapis, A. Georgakilas, C. Michelakis and A. Christou
Phys. Rev. B 47, 7198 (1993)
- Influence of degenerate free carriers on radiative lifetimes in GaAs quantum wells
R. Eccleston, . C. Phillips, P. Hawrylak, R. T. Harley and S. R. Andrews
Phys. Rev. B 47, 7170 (1993)
- Spin-resolved cyclotron resonance in InAs quantum wells: A study of the energy-dependent g factor
M. J. Yang, R. J. Wagner, B. V. Shanabrook, J. R. Waterman, and W. J. Moore
Phys. Rev. B 47, 6807 (1993)
- Strain-induced heavy-hole-to-light-hole energy splitting in (111)B pseudomorphic InyGa1-yAs quantum wells
T. S. Moise, L. J. Guido, and R. C. Barker
Phys. Rev. B 47, 6758 (1993)
- Absorption saturation of intersubband optical transitions in GaAs/AlxGa1-xAs multiple quantum wells
Da
Phys. Rev. B 47, 6755 (1993)
- Band offsets of Ga0.5In0.5P/GaAs single quantum wells from pressure-induced type-II transitions
M. Leroux, M. L. Fille, B. Gil, J. P. Landesman and J. C. Garcia
Phys. Rev. B 47, 6465 (1993)
- Band offsets and transitivity of In1-xGaxAs/In1-yAlyAs/InP heterostructures
J. Böhrer, A. Krost, T. Wolf, and D. Bimberg
Phys. Rev. B 47, 6439 (1993)
- Optical properties of thin, strained layers of GaAsxP1-x grown on (111)-oriented GaP
M. Gerling, G. Paulsson, M.
Phys. Rev. B 47, 6408 (1993)
- Quantum unconfined Stark effect in a GaAs single quantum well: An optical-constant model
Jin Wang, J. P. Leburton, C. M. Herzinger, T. A. DeTemple, and J. J. Coleman
Phys. Rev. B 47, 4783 (1993)
- Observation of the interfacial-field-induced weak antilocalization in InAs quantum structures
G. L. Chen, J. Han, T. T. Huang, S. Datta, and D. B. Janes
Phys. Rev. B 47, 4084 (1993)
- Electron mobilities in modulation-doped AlxGa1-xAs/GaAs and pseudomorphic AlxGa1-xAs/InyGa1-yAs quantum-well structures
Kaoru Inoue and Toshinobu Matsuno
Phys. Rev. B 47, 3771 (1993)
- High-pressure photoluminescence study of GaAs/GaAs1-xPx strained multiple quantum wells
W. Shan, S. J. Hwang, J. J. Song, H. Q. Hou and C. W. Tu
Phys. Rev. B 47, 3765 (1993)
- Coherent generation and interference of excitons and biexcitons in GaAs/AlxGa1-xAs quantum wells
K.
Phys. Rev. B 47, 2413 (1993)
- Donor-photoluminescence line shapes from GaAs-(Ga,Al)As quantum wells
L. E. Oliveira and G. D. Mahan
Phys. Rev. B 47, 2406 (1993)
- Extended, monolayer flat islands and exciton dynamics in Ga0.47In0.53As/InP quantum-well structures
X. Liu, S. Nilsson, L. Samuelson, W. Seifert and P. L. Souza
Phys. Rev. B 47, 2203 (1993)
- Evidence of type-I band offsets in strained GaAs1-xSbx/GaAs quantum wells from high-pressure photoluminescence
A. D. Prins, D. J. Dunstan, J. D. Lambkin, E. P. O
Phys. Rev. B 47, 2191 (1993)
- Effect of charge-carrier screening on the exciton binding energy in GaAs/AlxGa1-xAs quantum wells
E. X. Ping and H. X. Jiang
Phys. Rev. B 47, 2101 (1993)
- Measurement of the exciton binding energy in a narrow GaAs-AlxGa1-xAs quantum well by photoluminescence excitation spectroscopy
D. W. Kim, Y. A. Leem, S. D. Yoo, D. H. Woo, D. H. Lee, and J. C. Woo
Phys. Rev. B 47, 2042 (1993)
- Gamma -X mixing in GaAs/AlxGa1-xAs coupled double quantum wells under hydrostatic pressure
J. H. Burnett, H. M. Cheong, W. Paul, E. S. Koteles and B. Elman
Phys. Rev. B 47, 1991 (1993)
- Uniaxial-stress investigation of asymmetrical GaAs-(Ga,Al)As double quantum wells
Bernard Gil, Pierre Lefebvre, Philippe Bonnel, Henry Mathieu, Christiane Deparis, Jean Massies, Gérard Neu and Yong Chen
Phys. Rev. B 47, 1954 (1993)
- Influence of exciton ionization on recombination dynamics in In0.53Ga0.47As/InP quantum wells
P. Michler, A. Hangleiter, A. Moritz, V. Härle, and F. Scholz
Phys. Rev. B 47, 1671 (1993)
- Intrasubband excitations and spin-splitting anisotropy in GaAs modulation-doped quantum wells
D. Richards, B. Jusserand, H. Peric, and B. Etienne
Phys. Rev. B 47, 16028 (1993)
- Interface excitons in staggered-line-up quantum wells: The AlAs/GaAs case
R. Zimmermann and D. Bimberg
Phys. Rev. B 47, 15789 (1993)
- Well-width and aluminum-concentration dependence of the exciton binding energies in GaAs/AlxGa1-xAs quantum wells
Massimo Gurioli, Juan Martinez
Phys. Rev. B 47, 15755 (1993)
- Electronic structure of a shallow acceptor confined in a GaAs/AlxGa1-xAs quantum well
P. O. Holtz, Q. X. Zhao, B. Monemar, M. Sundaram, J. L. Merz, and A. C. Gossard
Phys. Rev. B 47, 15675 (1993)
- Optical anisotropy in GaAs/AlxGa1-xAs multiple quantum wells under thermally induced uniaxial strain
H. Shen, M. Wraback, J. Pamulapati, P. G. Newman, M. Dutta, Y. Lu and H. C. Kuo
Phys. Rev. B 47, 13933 (1993)
- Velocity-field characteristics of selectively doped GaAs/AlxGa1-xAs quantum-well heterostructures
Leng Seow Tan, Soo Jin Chua, and Vijay K. Arora
Phys. Rev. B 47, 13868 (1993)
- Raman scattering from folded acoustic phonons and photoluminescence in multilayer GaAs-AlAs superlattices
D. J. Lockwood, R. L. S. Devine, A. Rodriguez, J. Mendialdua, B. Djafari Rouhani and L. Dobrzynski
Phys. Rev. B 47, 13553 (1993)
- Electron accumulation at undoped AlSb-InAs quantum wells: Theory
D. J. Chadi
Phys. Rev. B 47, 13478 (1993)
- Band-offset ratio dependence on the effective-mass Hamiltonian based on a modified profile of the GaAs-AlxGa1-xAs quantum well
Tsung L. Li and Kelin J. Kuhn
Phys. Rev. B 47, 12760 (1993)
- Exciton localization effects and heterojunction band offset in (Ga,In)P-(Al,Ga,In)P multiple quantum wells
Martin D. Dawson and Geoffrey Duggan
Phys. Rev. B 47, 12598 (1993)
- Intersubband relaxation of heavy-hole excitons in GaAs quantum wells
R. A. Höpfel, R. Rodrigues, Y. Iimura, T. Yasui, Y. Segawa, Y. Aoyagi and S. M. Goodnick
Phys. Rev. B 47, 10943 (1993)
- Spin relaxation of two-dimensional electrons in GaAs quantum wells
Vivek Srinivas, Yung Jui Chen, and Colin E. C. Wood
Phys. Rev. B 47, 10907 (1993)
- Microwave modulation of exciton luminescence in GaAs/AlxGa1-xAs quantum wells
B. M. Ashkinadze, E. Cohen, Arza Ron and L. Pfeiffer
Phys. Rev. B 47, 10613 (1993)
- Effects of an electric field on the continuum energy levels in InxGa1-xAs/GaAs quantum wells terminated with thin cap layers
S. Fafard, E. Fortin and A. P. Roth
Phys. Rev. B 47, 10588 (1993)
- Temperature dependence of exciton lifetimes in GaAs/AlxGa1-xAs single quantum wells
J. Martinez
Phys. Rev. B 47, 10456 (1993)
- Spin-relaxation process of holes in type-II Al0.34Ga0.66As/AlAs multiple quantum wells
Tadashi Kawazoe, Yasuaki Masumoto, and Tomobumi Mishina
Phys. Rev. B 47, 10452 (1993)
- Self-consistent electronic-structure calculation of InP/InxGa1-xAs effective-mass quantum wells: The influence of a continuous spectrum
M. Tadic, V. Milanovic and Z. Ikonic
Phys. Rev. B 47, 10415 (1993)
- Polaron-cyclotron-resonance spectrum resulting from interface- and slab-phonon modes in a GaAs/AlAs quantum well
G. Q. Hai, F. M. Peeters, and J. T. Devreese
Phys. Rev. B 47, 10358 (1993)
- Center-of-mass quantization of excitons and polariton interference in GaAs thin layers
A. Tredicucci, Y. Chen, F. Bassani, J. Massies, C. Deparis, and G. Neu
Phys. Rev. B 47, 10348 (1993)