1993 year
- Selective exciton formation in thin GaAs/AlxGa1-xAs quantum wells
P. W. M. Blom, P. J. van Hall, C. Smit, J. P. Cuypers, and J. H. Wolter
Phys. Rev. Lett. 71, 3878 (1993)
- Many body shakeup in quantum well luminescence spectra
K. J. Nash, M. S. Skolnick, M. K. Saker, and S. J. Bass
Phys. Rev. Lett. 70, 3115 (1993)
- Photoluminescence up-conversion induced by intersubband absorption in asymmetric coupled quantum wells
P. Vagos, P. Boucaud, F. H. Julien, J.
Phys. Rev. Lett. 70, 1018 (1993)
- Exciton radiative decay and homogeneous broadening in CdTe/Cd0.85Mn0.15Te multiple quantum wells
M. O
Phys. Rev. B 48, 8980 (1993)
- Excited states of shallow acceptors confined in GaAs/AlxGa1-xAs quantum wells
P. O. Holtz, Q. X. Zhao, A. C. Ferreira, B. Monemar, M. Sundaram, J. L. Merz, and A. C. Gossard
Phys. Rev. B 48, 8872 (1993)
- Above-barrier resonant transitions in AlxGa1-xAs/AlAs/GaAs heterostructures
Marcello Colocci, Juan Martinez
Phys. Rev. B 48, 8089 (1993)
- Photoluminescence excitation spectroscopy of Be-remotely-doped wide parabolic GaAs/AlxGa1-xAs quantum wells
J. H. Burnett, H. M. Cheong, W. Paul, P. F. Hopkins and A. C. Gossard
Phys. Rev. B 48, 7940 (1993)
- Comparison of 1s-2s exciton-energy splittings between (001) and (111) GaAs/AlxGa1-xAs quantum wells
Yasutomo Kajikawa
Phys. Rev. B 48, 7935 (1993)
- Exciton line shapes of GaAs/AlAs multiple quantum wells
J. Humlícek, E. Schmidt, L. Bocánek, R. Svehla and K. Ploog
Phys. Rev. B 48, 5241 (1993)
- Doping-density dependence of photoluminescence in highly Si-doped GaAs/AlxGa1-xAs quantum wells from below to above the metallic limit
C. I. Harris,B. Monemar, H. Kalt and K. Köhler
Phys. Rev. B 48, 4687 (1993)
- Photoluminescence line shape associated with e-A0 acceptor-related recombination in GaAs-(Ga,Al)As quantum wells under applied electric field
Rosana B. Santiago, J. d
Phys. Rev. B 48, 4498 (1993)
- Linear and circular polarizations of exciton luminescence in GaAs/AlxGa1-xAs quantum wells
A. Frommer, E. Cohen, Arza Ron and L. N. Pfeiffer
Phys. Rev. B 48, 2803 (1993)
- Thermal quenching and retrapping effects in the photoluminescence of InyGa1-yAs/GaAs/AlxGa1-xAs multiple-quantum-well structures
M. Vening, D. J. Dunstan and K. P. Homewood
Phys. Rev. B 48, 2412 (1993)
- Enhancement of the in-plane effective mass of electrons in modulation-doped InxGa1-xAs quantum wells due to confinement effects
G. Hendorfer, M. Seto, H. Ruckser, W. Jantsch, M. Helm, G. Brunthaler, W. Jost, H. Obloh, K. Köhler and D. J. As
Phys. Rev. B 48, 2328 (1993)
- Optical control of the two-dimensional electron-gas density in modulation-doped quantum wells studied by magnetophotoluminescence
F. Plentz, F. Meseguer, J. Sánchez
Phys. Rev. B 48, 1967 (1993)
- Intervalley scattering time in type-II AlxGa1-xAs/AlAs multiple quantum wells
S. Charbonneau, Jeff. F. Young, and P. T. Coleridge
Phys. Rev. B 48, 1932 (1993)
- Direct determination of the band discontinuities in InxGa1-xP/InyAl1-yP multiple quantum wells
D. Patel, M. J. Hafich, G. Y. Robinson, and C. S. Menoni
Phys. Rev. B 48, 18031 (1993)
- Spin-splitting renormalization in the neutral dense magnetoplasma in InxGa1-xAs/InP quantum wells
L. V. Butov, V. D. Kulakovskii and A. Forchel
Phys. Rev. B 48, 17933 (1993)
- Optical properties of a high-quality (311)-oriented GaAs/Al0.33Ga0.67As single quantum well
O. Brandt, K. Kanamoto, Y. Tokuda, N. Tsukada, O. Wada and J. Tanimura
Phys. Rev. B 48, 17599 (1993)
- Exciton line broadening by compositional disorder in alloy quantum wells
S. D. Baranovskii, U. Doerr, P. Thomas, A. Naumov and W. Gebhardt
Phys. Rev. B 48, 17149 (1993)
- d-like quantum-well states in (111)-oriented metallic overlayers on Fe and Co
D. Hartmann, W. Weber, A. Rampe, S. Popovic, and G. Güntherodt
Phys. Rev. B 48, 16837 (1993)
- Exciton confinement in GaAs quantum barriers
F. Martelli, M. Capizzi, A. Frova, A. Polimeni, F. Sarto, M. R. Bruni and M. G. Simeone
Phys. Rev. B 48, 1643 (1993)
- Interband spectroscopy of a quasi-three-dimensional electron gas in wide parabolic (Al,Ga)As quantum wells
M. Fritze, W. Chen,A. V. Nurmikko
Phys. Rev. B 48, 15103 (1993)
- Radiative lifetimes, quasi-Fermi-levels, and carrier densities in GaAs-(Ga,Al)As quantum-well photoluminescence under steady-state excitation conditions
Luiz E. Oliveira and M. de Dios
Phys. Rev. B 48, 15092 (1993)
- Optical properties of Ga0.8In0.2As/GaAs surface quantum wells
J. Dreybrodt, A. Forchel, and J. P. Reithmaier
Phys. Rev. B 48, 14741 (1993)
- Hot-carrier cooling in GaAs: Quantum wells versus bulk
Y. Rosenwaks, M. C. Hanna, D. H. Levi, D. M. Szmyd, R. K. Ahrenkiel, and A. J. Nozik
Phys. Rev. B 48, 14675 (1993)
- Origin of photoluminescence signals obtained by picosecond-excitation correlation measurements
J. L. A. Chilla, O. Buccafusca, and J. J. Rocca
Phys. Rev. B 48, 14347 (1993)
- Inverse parabolic quantum wells grown by molecular-beam epitaxy using digital and analog techniques
W. Q. Chen, S. M. Wang, T. G. Andersson, and J. Thordson
Phys. Rev. B 48, 14264 (1993)
- Fermi-energy edge singularity and excitonic enhancement associated with the second subband in asymmetric modulation-doped quantum wells
T. A. Fisher, P. E. Simmonds, M. S. Skolnick, A. D. Martin and R. S. Smith
Phys. Rev. B 48, 14253 (1993)
- Exciton-related lasing mechanism in ZnSe-(Zn,Cd)Se multiple quantum wells
Y. Kawakami, I. Hauksson, H. Stewart, J. Simpson, I. Galbraith, K. A. Prior, and B. C. Cavenett
Phys. Rev. B 48, 11994 (1993)
- Dipole-dipole coupling of excitons in double quantum wells
M. Batsch, T. Meier, P. Thomas, M. Lindberg, S. W. Koch and J. Shah
Phys. Rev. B 48, 11817 (1993)
- Theory of photoluminescence from a magnetic-field-induced two-dimensional quantum Wigner crystal
D. Z. Liu, H. A. Fertig and S. Das Sarma
Phys. Rev. B 48, 11184 (1993)
- Optical and structural properties of metalorganic-vapor-phase-epitaxy-grown InAs quantum wells and quantum dots in InP
R. Leonelli, C. A. Tran, J. L. Brebner, J. T. Graham, R. Tabti, R. A. Masut and S. Charbonneau
Phys. Rev. B 48, 11135 (1993)
- Excitation-intensity-dependent photoluminescence quenching due to electric-field screening by photocarriers captured in single-quantum-well structures
S. Fafard, E. Fortin and J. L. Merz
Phys. Rev. B 48, 11062 (1993)
- Exciton effects in sequential resonant tunneling of photocarriers in GaAs/AlAs multiple quantum wells
Harald Schneider, Joachim Wagner and Klaus Ploog
Phys. Rev. B 48, 11051 (1993)
- Exciton dynamics in InxGa1-xAs/GaAs quantum-well heterostructures: Competition between capture and thermal emission
G. Bacher, C. Hartmann, H. Schweizer, T. Held, G. Mahler and H. Nickel
Phys. Rev. B 47, 9545 (1993)
- Emission properties of quantum-well wires under stationary conditions
R. Rinaldi, R. Cingolani, M. Ferrara, H. Lage, D. Heitmann, and K. Ploog
Phys. Rev. B 47, 7275 (1993)
- Interband transitions in InxGa1-xAs/In0.52Al0.48As single quantum wells studied by room-temperature modulation spectroscopy
A. Dimoulas, J. Leng, K. P. Giapis, A. Georgakilas, C. Michelakis and A. Christou
Phys. Rev. B 47, 7198 (1993)
- Influence of degenerate free carriers on radiative lifetimes in GaAs quantum wells
R. Eccleston, . C. Phillips, P. Hawrylak, R. T. Harley and S. R. Andrews
Phys. Rev. B 47, 7170 (1993)
- Longitudinal-optical phonon and shake-up excitations in the recombination spectra of semiconductor quantum wells
M. S. Skolnick, D. J. Mowbray, D. M. Whittaker and R. S. Smith
Phys. Rev. B 47, 6823 (1993)
- Band offsets of Ga0.5In0.5P/GaAs single quantum wells from pressure-induced type-II transitions
M. Leroux, M. L. Fille, B. Gil, J. P. Landesman and J. C. Garcia
Phys. Rev. B 47, 6465 (1993)
- Band offsets and transitivity of In1-xGaxAs/In1-yAlyAs/InP heterostructures
J. Böhrer, A. Krost, T. Wolf, and D. Bimberg
Phys. Rev. B 47, 6439 (1993)
- Optical properties of thin, strained layers of GaAsxP1-x grown on (111)-oriented GaP
M. Gerling, G. Paulsson, M.
Phys. Rev. B 47, 6408 (1993)
- Interplay of Coulomb attraction and spatial confinement in the optical susceptibility of quantum wires
S. Glutsch and F. Bechstedt
Phys. Rev. B 47, 6385 (1993)
- Radiative lifetimes of excitons in quantum wells: Localization and phase-coherence effects
D. S. Citrin
Phys. Rev. B 47, 3832 (1993)
- High-pressure photoluminescence study of GaAs/GaAs1-xPx strained multiple quantum wells
W. Shan, S. J. Hwang, J. J. Song, H. Q. Hou and C. W. Tu
Phys. Rev. B 47, 3765 (1993)
- Donor-photoluminescence line shapes from GaAs-(Ga,Al)As quantum wells
L. E. Oliveira and G. D. Mahan
Phys. Rev. B 47, 2406 (1993)
- Extended, monolayer flat islands and exciton dynamics in Ga0.47In0.53As/InP quantum-well structures
X. Liu, S. Nilsson, L. Samuelson, W. Seifert and P. L. Souza
Phys. Rev. B 47, 2203 (1993)
- Evidence of type-I band offsets in strained GaAs1-xSbx/GaAs quantum wells from high-pressure photoluminescence
A. D. Prins, D. J. Dunstan, J. D. Lambkin, E. P. O
Phys. Rev. B 47, 2191 (1993)
- Effect of charge-carrier screening on the exciton binding energy in GaAs/AlxGa1-xAs quantum wells
E. X. Ping and H. X. Jiang
Phys. Rev. B 47, 2101 (1993)
- Carrier capture into a semiconductor quantum well
P. W. M. Blom, C. Smit, J. E. M. Haverkort, and J. H. Wolter
Phys. Rev. B 47, 2072 (1993)
- Measurement of the exciton binding energy in a narrow GaAs-AlxGa1-xAs quantum well by photoluminescence excitation spectroscopy
D. W. Kim, Y. A. Leem, S. D. Yoo, D. H. Woo, D. H. Lee, and J. C. Woo
Phys. Rev. B 47, 2042 (1993)
- Gamma -X mixing in GaAs/AlxGa1-xAs coupled double quantum wells under hydrostatic pressure
J. H. Burnett, H. M. Cheong, W. Paul, E. S. Koteles and B. Elman
Phys. Rev. B 47, 1991 (1993)
- Influence of exciton ionization on recombination dynamics in In0.53Ga0.47As/InP quantum wells
P. Michler, A. Hangleiter, A. Moritz, V. Härle, and F. Scholz
Phys. Rev. B 47, 1671 (1993)
- Photoluminescence study of vertical transport in Si1-xGex/Si heterostructures
L. C. Lenchyshyn, M. L. W. Thewalt, J. C. Sturm and X. Xiao
Phys. Rev. B 47, 16659 (1993)
- Photoluminescence mechanisms in thin Si1-xGex quantum wells
L. C. Lenchyshyn, M. L. W. Thewalt, D. C. Houghton, J.
Phys. Rev. B 47, 16655 (1993)
- Tunneling dynamics in CdTe/(Cd,Zn)Te asymmetric double-quantum-well structures
S. Haacke, N. T. Pelekanos, H. Mariette, M. Zigone, A. P. Heberle and W. W. Rühle
Phys. Rev. B 47, 16643 (1993)
- Electron decay from coupled quantum wells to a continuum: Observation of relaxation-induced slow down
G. Cohen, S. A. Gurvitz, I. Bar
Phys. Rev. B 47, 16012 (1993)
- Well-width and aluminum-concentration dependence of the exciton binding energies in GaAs/AlxGa1-xAs quantum wells
Massimo Gurioli, Juan Martinez
Phys. Rev. B 47, 15755 (1993)
- Electronic structure of a shallow acceptor confined in a GaAs/AlxGa1-xAs quantum well
P. O. Holtz, Q. X. Zhao, B. Monemar, M. Sundaram, J. L. Merz, and A. C. Gossard
Phys. Rev. B 47, 15675 (1993)
- Photoluminescence of recombination processes from two-dimensional electron states to three-dimensional hole states in narrow-gap semiconductor quantum wells
Z. C. Tao, M. Singh, V. Ivanov
Phys. Rev. B 47, 1516 (1993)
- Raman scattering from folded acoustic phonons and photoluminescence in multilayer GaAs-AlAs superlattices
D. J. Lockwood, R. L. S. Devine, A. Rodriguez, J. Mendialdua, B. Djafari Rouhani and L. Dobrzynski
Phys. Rev. B 47, 13553 (1993)
- Influence of interface phonons on intersubband scattering in asymmetric coupled quantum wells
J. L. Educato, J.
Phys. Rev. B 47, 12949 (1993)
- Photoluminescence under pressure of ultrathin AlAs layers grown on GaAs vicinal surfaces: A search for lateral confinement effects
B. Chastaingt, M. Leroux, G. Neu, N. Grandjean, C. Deparis, and J. Massies
Phys. Rev. B 47, 1292 (1993)
- Luminescence and intersubband excitations in high-density two-dimensional electron gases
H. Peric, B. Jusserand, D. Richards and B. Etienne
Phys. Rev. B 47, 12722 (1993)
- Exciton localization effects and heterojunction band offset in (Ga,In)P-(Al,Ga,In)P multiple quantum wells
Martin D. Dawson and Geoffrey Duggan
Phys. Rev. B 47, 12598 (1993)
- Intersubband relaxation of heavy-hole excitons in GaAs quantum wells
R. A. Höpfel, R. Rodrigues, Y. Iimura, T. Yasui, Y. Segawa, Y. Aoyagi and S. M. Goodnick
Phys. Rev. B 47, 10943 (1993)
- Microwave modulation of exciton luminescence in GaAs/AlxGa1-xAs quantum wells
B. M. Ashkinadze, E. Cohen, Arza Ron and L. Pfeiffer
Phys. Rev. B 47, 10613 (1993)
- Temperature dependence of exciton lifetimes in GaAs/AlxGa1-xAs single quantum wells
J. Martinez
Phys. Rev. B 47, 10456 (1993)
- Center-of-mass quantization of excitons and polariton interference in GaAs thin layers
A. Tredicucci, Y. Chen, F. Bassani, J. Massies, C. Deparis, and G. Neu
Phys. Rev. B 47, 10348 (1993)