1994 year
- Interfacial defects in Si1-xGex/Si quantum wells detected by deep-level transient spectroscopy
Qinhua Wang, Fang Lu, Dawei Gong, Xiangjun Chen, Jianbao Wang, Henghui Sun, and Xun Wang
Phys. Rev. B 50, 18226 (1994)
- Type-II band alignment in Si/Si1-xGex quantum wells from photoluminescence line shifts due to optically induced band-bending effects: Experiment and theory
T. Baier, U. Mantz, K. Thonke, R. Sauer, F. Schäffler and H.
Phys. Rev. B 50, 15191 (1994)
- Hole energy levels and intersubband absorption in modulation-doped Si/Si1-xGex multiple quantum wells
T. Fromherz, E. Koppensteiner, M. Helm, G. Bauer, J. F. Nützel and G. Abstreiter
Phys. Rev. B 50, 15073 (1994)
- Metallization, surface photovoltage, and quantum-well-type resonance for K-covered Si(100) observed via valence-band photoemission
A. Hamawi
Phys. Rev. B 50, 10910 (1994)
- Characterization of Ge/SiGe strained-barrier quantum-well structures using photoreflectance spectroscopy
H. Yaguchi, K. Tai, K. Takemasa, K. Onabe, R. Ito and Y. Shiraki
Phys. Rev. B 49, 7394 (1994)
- Effects of band nonparabolicity and central-cell corrections on the spectrum of Si donors in GaAs quantum wells
E. R. Mueller, D. M. Larsen, J. Waldman and W. D. Goodhue
Phys. Rev. B 49, 13475 (1994)