1994 year
- Carrier-gain dynamics in InxGa1-xAs/AlyGa1-yAs strained-layer single-quantum-well diode lasers: Comparison of theory and experiment
G. D. Sanders, C.
Phys. Rev. B 50, 8539 (1994)
- Reflectance study of the oscillator strength of excitons in semiconductor quantum wells
Baoping Zhang, Satoru S. Kano, Yasuhiro Shiraki and Ryoichi Ito
Phys. Rev. B 50, 7499 (1994)
- Exciton mixing in the magnetophotoluminescence excitation spectra of shallow strained InxGa1-xAs/GaAs quantum wells
V. D. Kulakovskii, A. Forchel, K. Pieger, J. Straka, B. N. Shepel and S. V. Nochevny
Phys. Rev. B 50, 7467 (1994)
- Observation of long-lived exciton magnetic polarons in Zn1-xMnxSe/ZnSe multiple quantum wells
C. D. Poweleit, L. M. Smith and B. T. Jonker
Phys. Rev. B 50, 18662 (1994)
- Interfacial defects in Si1-xGex/Si quantum wells detected by deep-level transient spectroscopy
Qinhua Wang, Fang Lu, Dawei Gong, Xiangjun Chen, Jianbao Wang, Henghui Sun, and Xun Wang
Phys. Rev. B 50, 18226 (1994)
- Characterization of effective masses in strained quantum-well laser structures
T. A. Ma and M. S. Wartak
Phys. Rev. B 50, 15401 (1994)
- Hole energy levels and intersubband absorption in modulation-doped Si/Si1-xGex multiple quantum wells
T. Fromherz, E. Koppensteiner, M. Helm, G. Bauer, J. F. Nützel and G. Abstreiter
Phys. Rev. B 50, 15073 (1994)
- Renormalization effects in the dense electron-hole magnetoplasma of a strained InxGa1-xAs/GaAs single quantum well after picosecond excitation
A. F. Dite, V. D. Kulakovskii, F. Faller and A. Forchel
Phys. Rev. B 50, 15063 (1994)
- Electronic structure and optical properties of [(ZnSe)m(CdSe)n]N-ZnSe multiple quantum wells
Shang
Phys. Rev. B 50, 14416 (1994)
- Exciton properties and optical response in InxGa1-xAs/GaAs strained quantum wells
R. Atanasov, F. Bassani, A. D
Phys. Rev. B 50, 14381 (1994)
- Photocurrent spectroscopy of Zn1-xCdxSe/ZnSe quantum wells in p-i-n heterostructures
R. Cingolani, M. Di Dio, M. Lomascolo, R. Rinaldi, P. Prete, L. Vasanelli, L. Vanzetti, F. Bassani, A. Bonanni, L. Sorba, and A. Franciosi
Phys. Rev. B 50, 12179 (1994)
- Inversion asymmetry, hole mixing, and enhanced Pockels effect in quantum wells and superlattices
Bang
Phys. Rev. B 50, 11932 (1994)
- Level anticrossing and related giant optical anisotropy caused by the Stark effect in a strained (110) quantum well
Yasutomo Kajikawa
Phys. Rev. B 49, 8136 (1994)
- Characterization of Ge/SiGe strained-barrier quantum-well structures using photoreflectance spectroscopy
H. Yaguchi, K. Tai, K. Takemasa, K. Onabe, R. Ito and Y. Shiraki
Phys. Rev. B 49, 7394 (1994)
- Analytic model for the valence-band structure of a strained quantum well
Bradley A. Foreman
Phys. Rev. B 49, 1757 (1994)
- Conduction-band spin splitting of type-I GaxIn1-xAs/InP quantum wells
B. Kowalski, P. Omling, B. K. Meyer, D. M. Hofmann, C. Wetzel, V. Härle, F. Scholz and P. Sobkowicz
Phys. Rev. B 49, 14786 (1994)
- Motion of electrons in semiconductors under inhomogeneous strain with application to laterally confined quantum wells
Yong Zhang
Phys. Rev. B 49, 14352 (1994)
- Optical phonons in strained single InAs/InP quantum wells: A Raman study
C. A. Tran, J. L. Brebner, R. Leonelli, M. Jouanne and R. A. Masut
Phys. Rev. B 49, 11268 (1994)
- Magneto-optical study of Ga1-xInxSb/GaSb strained-quantum-well structures: Miniband formation and valence-band structure
S. L. Wong, R. J. Warburton, R. J. Nicholas, N. J. Mason, and P. J. Walker
Phys. Rev. B 49, 11210 (1994)
- Tensile-strain effects in quantum-well and superlattice band structures
Arvind Baliga, Dhrupad Trivedi, and Neal G. Anderson
Phys. Rev. B 49, 10402 (1994)