Photoreflectance spectroscopy
- Electronic parameters and interfacial properties of GaAs/AlxGa1-xAs multiquantum wells grown on (111)A GaAs by metalorganic vapor phase epitaxy
S. Cho, A. Sanz-Hervás, A. Majerfeld, and B. W. Kim
Phys. Rev. B 68, 035308 (2003)
- Characterization of Ge/SiGe strained-barrier quantum-well structures using photoreflectance spectroscopy
H. Yaguchi, K. Tai, K. Takemasa, K. Onabe, R. Ito and Y. Shiraki
Phys. Rev. B 49, 7394 (1994)