Gain
- Engineering the electromagnetic vacuum for controlling light with light in a photonic-band-gap microchip
R. Wang and S. John
Phys. Rev. A 70, 043805 (2004)
- Resonance fluorescence in photonic band gap waveguide architectures: Engineering the vacuum for all-optical switching
M. Florescu and S. John
Phys. Rev. A 69, 053810 (2004)
- Internal efficiency of semiconductor lasers with a quantum-confined active region
L. V. Asryan, S. Luryi and R. A. Suris
IEEE J. Quantum Electron., 39, 404 (2003)
- Theory of threshold characteristics of quantum dot lasers: Effect of quantum dot parameter dispersion (Review)
L. V. Asryan and R. A. Suris
Int. J. High Speed Electron. Syst., 12, 111 (2002)
- Intrinsic nonlinearity of the light-current characteristic of semiconductor lasers with a quantum-confined active region
L. V. Asryan, S. Luryi and R. A. Suris
Appl. Phys. Lett., 81, 2154 (2002)
- 980 nm Quantum Dot Lasers with Very Small Threshold Current Densities
F. Klopf, J.P. Reithmaier, A. Forchel
Phys. Stat. Sol. (b), 224, 845 (2001)
- Gain Characteristics of Self-Assembled InAs/GaAs Quantum Dots
M. Arzberger, G. Böhm, M.C. Amann, G. Abstreiter
Phys. Stat. Sol. (b), 224, 827 (2001)
- Room-temperature operation of InAs quantum-dash lasers on InP (001)
Wang, R.H. Stintz, A. Varangis, P.M. Newell, T.C. Li, H. Malloy, K.J. Lester, L.F.
IEEE J. Phot. Technol. Lett., 13, 767 (2001)
- High-temperature operating 1.3-μm quantum-dot lasers for telecommunication applications
Klopf, F. Krebs, R. Reithmaier, J.P. Forchel, A.
IEEE J. Phot. Technol. Lett., 13, 764 (2001)
- Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers
Eliseev, P.G. Li, H. Liu, T. Newell, T.C. Lester, L.F. Malloy, K.J.
IEEE J. Select. Topics Quantum Electron., 7, 135 (2001)
- Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation
M. V. Maximov, L. V. Asryan, Yu. M. Shernyakov, A. F. Tsatsul'nikov, I. N. Kaiander, V. V. Nikolaev, A. R. Kovsh, S. S. Mikhrin, V. M. Ustinov, A. E. Zhukov, Zh. I. Alferov, N. N. Ledenstov, and D. Bimberg
IEEE J. Quantum Electron., 37, 676 (2001)
- Effect of excited-state transitions on the threshold characteristics of a quantum dot laser
L. V. Asryan, M. Grundmann, N. N. Ledentsov, O. Stier, R. A. Suris, and D. Bimberg
IEEE J. Quantum Electron., 37, 418 (2001)
- Intersubband quantum-box semiconductor lasers
Chia-Fu Hsu Jeong-Seok O Zory, P. Botez, D.
IEEE J. Select. Topics Quantum Electron., 6, 491 (2000)
- Performance and physics of quantum-dot lasers with self-assembled columnar-shaped and 1.3-μm emitting InGaAs quantum dots
Sugawara, M. Mukai, K. Nakata, Y. Otsubo, K. Ishilkawa, H.
IEEE J. Select. Topics Quantum Electron., 6, 462 (2000)
- The influence of quantum-well composition on the performance of quantum dot lasers using InAs-InGaAs dots-in-a-well (DWELL) structures
Liu, G.T. Stintz, A. Li, H. Newell, T.C. Gray, A.L. Varangis, P.M. Malloy, K.J. Lester, L.F.
IEEE J. Quantum Electron., 36, 1272 (2000)
- Optical characteristics of 1.24-μm InAs quantum-dot laser diodes
Lester, L.F. Stintz, A. Li, H. Newell, T.C. Pease, E.A. Fuchs, B.A. Malloy, K.J.
IEEE J. Phot. Technol. Lett., 11, 931 (1999)
- Gain and linewidth enhancement factor in InAs quantum-dot laser diodes
Newell, T.C. Bossert, D.J. Stintz, A. Fuchs, B. Malloy, K.J. Lester, L.F.
IEEE J. Phot. Technol. Lett., 11, 1527 (1999)
- Gain characteristics of InAs/GaAs self-organized quantum-dot lasers
L. Harris, A. D. Ashmore, D. J. Mowbray, M. S. Skolnick, M. Hopkinson, G. Hill, and J. Clark
Appl. Phys. Lett., 75, 3512 (1999)
- High-performance GaInAs/GaAs quantum-dot lasers based on a single active layer
F. Schäfer, J. P. Reithmaier, and A. Forchel
Appl. Phys. Lett., 74, 2915 (1999)
- InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3
V. M. Ustinov, N. A. Maleev, A. E. Zhukov, A. R. Kovsh, A. Yu. Egorov, A. V. Lunev, B. V. Volovik, I. L. Krestnikov, Yu. G. Musikhin, N. A. Bert, P. S. Kop'ev, Zh. I. Alferov, N. N. Ledentsov and D. Bimberg
Appl. Phys. Lett., 74, 2815 (1999)
- Light emission spectra of columnar-shaped self-assembled InGaAs/GaAs quantum-dot lasers: Effect of homogeneous broadening of the optical gain on lasing characteristics
Mitsuru Sugawara, Kohki Mukai, and Yoshiaki Nakata
Appl. Phys. Lett., 74, 1561 (1999)
- Continuous stimulated emission at T = 293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(001) surfaces misoriented in the [010] direction in the active region
V. P. Evtikhiev, I. V. Kudryashov, E. Yu. Kotel'nikov, V. E. Tokranov, A. N. Titkov, I. S. Tarasov, and Zh. I. Alferov
Semicond., 32, 1323 (1998)
- Feasibility study on the application of the quantum disk to the gain-coupled distributed feedback laser
Susa, N.
IEEE J. Quantum Electron., 34, 1317 (1998)
- Emission spectra and mode structure of InAs/GaAs self-organized quantum dot
L. Harris, D. J. Mowbray, M. S. Skolnick, M. Hopkinson and G. Hill
Appl. Phys. Lett., 73, 969 (1998)
- Injection lasers with vertically aligned InP/GaInP quantum dots: Dependence of the threshold current on temperature and dot size
T. Riedl, E. Fehrenbacher, A. Hangleiter, M. K. Zundel and K. Eberl
Appl. Phys. Lett., 73, 3730 (1998)
- 1.3
D. L. Huffaker, G. Park, Z. Zou, O. B. Shchekin, and D. G. Deppe
Appl. Phys. Lett., 73, 2564 (1998)
- Theory of random population for quantum dots
M. Grundmann and D. Bimberg
Phys. Rev. B 55, 9740 (1997)
- Possibility of room temperature intra-band lasing in quantum dot structures placed in high-photon density cavities
Singh, J.
IEEE J. Phot. Technol. Lett., 8, 488 (1996)
- Quantum dot laser: gain spectrum inhomogeneous broadening and threshold current
Robert A. Suris, Levon V. Asryan
Proc. SPIE's Int. Symp. PHOTONICS WEST, 2399, 433 (1995)
- Ionization balance in semiconductor quantum-dot lasers
Janet L. Pan
Phys. Rev. B 49, 2536 (1994)
- Quantum box fabrication tolerance and size limits in semiconductors and their effect on optical gain
Vahala, K.J.
IEEE J. Quantum Electron., 24, 523 (1988)
- Gain and the threshold of three-dimensional quantum-box lasers
Asada, M. Miyamoto, Y. Suematsu, Y.
IEEE J. Quantum Electron., 22, 1915 (1986)
- Theory of threshold characteristics of semiconductor quantum dot lasers (Review)
L. V. Asryan and R. A. Suris
Semicond., 38, 1 (2004)
- Temperature-insensitive semiconductor quantum dot laser
L. V. Asryan and S. Luryi
Solid-State Electron., 47, 205 (2003)