2002 year
- Valley Splitting of AlAs Two-Dimensional Electrons in a Perpendicular Magnetic Field
Y. P. Shkolnikov, E. P. De Poortere, E. Tutuc, and M. Shayegan
Phys. Rev. Lett. 89, 226805 (2002)
- Long-range Spatial Correlations in the Exciton Energy Distribution in GaAs/AlGaAs Quantum Wells
Y. Yayon, A. Esser, M. Rappaport, V. Umansky, H. Shtrikman, and I. Bar-Joseph
Phys. Rev. Lett. 89, 157402 (2002)
- Resonant Enhancement of Tunneling Magnetoresistance in Double-Barrier Magnetic Heterostructures
A. G. Petukhov, A. N. Chantis and D. O. Demchenko
Phys. Rev. Lett. 89, 107205 (2002)
- Rashba Spin-Orbit Coupling Probed by the Weak Antilocalization Analysis in InAlAs/InGaAs/InAlAs Quantum Wells as a Function of Quantum Well Asymmetry
Takaaki Koga, Junsaku Nitta, Tatsushi Akazaki, and Hideaki Takayanagi
Phys. Rev. Lett. 89, 046801 (2002)
- Effective Mass Anisotropy of Electrons in GaAs/AlGaAs Quantum Wells
T. Reker, H. Im, L. E. Bremme, H. Choi, Y. Chung, P. C. Klipstein and Hadas Shtrikman
Phys. Rev. Lett. 88, 056403 (2002)
- Optical phonon
Zu Wei Yan and X. X. Liang
Phys. Rev. B 66, 235324 (2002)
- Solutions of the k
Laura E. Bremme and P. C. Klipstein
Phys. Rev. B 66, 235316 (2002)
- Changes in luminescence intensities and carrier dynamics induced by proton irradiation in InxGa1
S. Marcinkeviius, J. Siegert, R. Leon, B. echaviius, B. Magness, W. Taylor and C. Lobo
Phys. Rev. B 66, 235314 (2002)
- Surface photovoltage studies of InxGa1
Gh. Dumitras, H. Riechert, H. Porteanu and F. Koch
Phys. Rev. B 66, 205324 (2002)
- Photothermal transitions of magnetoexcitons in GaAs/AlxGa1
J. erne, J. Kono, M. Su and M. S. Sherwin
Phys. Rev. B 66, 205301 (2002)
- Spin injection from (Ga,Mn)As into InAs quantum dots
Y. Chye, M. E. White, E. Johnston-Halperin, B. D. Gerardot, D. D. Awschalom, and P. M. Petroff
Phys. Rev. B 66, 201301(R) (2002)
- Time-resolved spectroscopy of (Al,Ga,In)N based quantum wells: Localization effects and effective reduction of internal electric fields
P. Lefebvre, S. Anceau, P. Valvin, T. Taliercio, L. Konczewicz, T. Suski, S. P. epkowski, H. Teisseyre, H. Hirayama and Y. Aoyagi
Phys. Rev. B 66, 195330 (2002)
- Electronic states of ultrathin InAs/InP (001) quantum wells: A tight-binding study of the effects of band offset, strain, and intermixing
N. Shtinkov, P. Desjardins, and R. A. Masut
Phys. Rev. B 66, 195303 (2002)
- In surface segregation during growth of (In,Ga)N/GaN multiple quantum wells by plasma-assisted molecular beam epitaxy
Patrick Waltereit, Oliver Brandt, Klaus H. Ploog, Maria Antonia Tagliente and Leander Tapfer
Phys. Rev. B 66, 165322 (2002)
- Electronic structure of InyGa1
S. A. Choulis, T. J. C. Hosea, S. Tomi, M. Kamal-Saadi, A. R. Adams, E. P. O'Reilly, B. A. Weinstein and P. J. Klar
Phys. Rev. B 66, 165321 (2002)
- Localized and quantum-well state excitons in AlInGaN laser-diode structure
Chang-Cheng Chuo, Guan-Ting Chen, Ming-I Lin, Chia-Ming Lee, and Jen-Inn Chyi
Phys. Rev. B 66, 161301(R) (2002)
- Stark-resonance densities of states, eigenfunctions, and lifetimes for electrons in GaAs/(Al,Ga)As quantum wells under strong electric fields: An optical-potential wave-packet propagation method
Martha L. Zambrano and Julio C. Arce
Phys. Rev. B 66, 155340 (2002)
- Excitonic polarization dephasing under strong resonant pulsed excitation in GaAs quantum wells
Bipul Pal and A. S. Vengurlekar
Phys. Rev. B 66, 155337 (2002)
- Optical orientation and the Hanle effect of neutral and negatively charged excitons in GaAs/AlxGa1
R. I. Dzhioev, V. L. Korenev, B. P. Zakharchenya, D. Gammon, A. S. Bracker, J. G. Tischler and D. S. Katzer
Phys. Rev. B 66, 153409 (2002)
- Characterization of one-dimensional quantum channels in InAs/AlSb
C. H. Yang, M. J. Yang, K. A. Cheng, and J. C. Culbertson
Phys. Rev. B 66, 115306 (2002)
- Band-gap energy of InxGa1
J.-Y. Duboz, J. A. Gupta, Z. R. Wasilewski, J. Ramsey, R. L. Williams, G. C. Aers, B. J. Riel, and G. I. Sproule
Phys. Rev. B 66, 085313 (2002)
- Strain-induced semimetal-semiconductor transition in InAs/GaSb broken-gap quantum wells
A. Zakharova, S. T. Yen and K. A. Chao
Phys. Rev. B 66, 085312 (2002)
- Fine structure of trions and excitons in single GaAs quantum dots
J. G. Tischler, A. S. Bracker, D. Gammon, and D. Park
Phys. Rev. B 66, 081310(R) (2002)
- Field-dependent carrier decay dynamics in strained InxGa1
Y. D. Jho, J. S. Yahng, E. Oh, and D. S. Kim
Phys. Rev. B 66, 035334 (2002)
- Interaction between the Fermi-edge singularity and optical phonons in AlxGa1
Yu. I. Mazur, G. G. Tarasov, Z. Ya. Zhuchenko, H. Kissel, U. Müller, Vas. P. Kunets, and W. T. Masselink
Phys. Rev. B 66, 035308 (2002)
- Band-gap-related energies of threading dislocations and quantum wells in group-III nitride films as derived from electron energy loss spectroscopy
A. Gutiérrez-Sosa, U. Bangert, A. J. Harvey, C. J. Fall, R. Jones, P. R. Briddon and M. I. Heggie
Phys. Rev. B 66, 035302 (2002)
- Ordering parameter and band-offset determination for ordered GaxIn1
Jun Shao, Achim Dörnen, Rolf Winterhoff, and Ferdinand Scholz
Phys. Rev. B 66, 035109 (2002)
- Low-field magnetoresistance in GaAs two-dimensional holes
S. J. Papadakis, E. P. De Poortere, H. C. Manoharan, J. B. Yau, M. Shayegan, and S. A. Lyon
Phys. Rev. B 65, 245312 (2002)
- Reduced temperature dependence of the band gap in GaAs1
A. Polimeni, M. Bissiri, A. Augieri, G. Baldassarri Höger von Högersthal, and M. Capizzi
Phys. Rev. B 65, 235325 (2002)
- Magnetic-field dependence of the spin states of the negatively charged exciton in GaAs quantum wells
T. Vanhoucke, M. Hayne, M. Henini and V. V. Moshchalkov
Phys. Rev. B 65, 233305 (2002)
- Level repulsion in nanophotoluminescence spectra from single GaAs quantum wells
G. von Freymann, U. Neuberth, M. Deubel, M. Wegener, G. Khitrova and H. M. Gibbs
Phys. Rev. B 65, 205327 (2002)
- Polaron effect in GaAs-Ga1
A. Matos-Abiague
Phys. Rev. B 65, 165321 (2002)
- Polarization dependence of the excitonic optical Stark effect in GaN
C. K. Choi, J. B. Lam, G. H. Gainer, S. K. Shee, J. S. Krasinski, J. J. Song and Yia-Chung Chang
Phys. Rev. B 65, 155206 (2002)
- Coupling mechanisms for optically induced NMR in GaAs quantum wells
Marcus Eickhoff, Björn Lenzman, Gregory Flinn, and Dieter Suter
Phys. Rev. B 65, 125301 (2002)
- Exciton-acoustic-phonon linewidths in GaAs bulk and quantum wells
S. Rudin and T. L. Reinecke
Phys. Rev. B 65, 121311(R) (2002)
- Quenching of the exciton-spin relaxation via exchange interaction in GaAs/AlxGa1
J. Urdanivia, F. Iikawa, M. Z. Maialle, J. A. Brum, P. Hawrylak and Z. Wasilewski
Phys. Rev. B 65, 115336 (2002)
- Illumination as a tool to investigate the quantum mobility of the two-dimensional electron gas in a Si -doped GaAs/In0.15Ga0.85As/GaAs quantum well
A. Cavalheiro, E. C. F. da Silva, E. K. Takahashi, A. A. Quivy, J. R. Leite and E. A. Meneses
Phys. Rev. B 65, 075320 (2002)
- Intensity correlated nonlinear photoluminescence spectra in undoped and p-doped GaAs and GaAs quantum wells
Bipul Pal, A. V. Gopal, S. S. Prabhu, and A. S. Vengurlekar
Phys. Rev. B 65, 045312 (2002)
- Spin-polarized Zener tunneling in (Ga,Mn)As
E. Johnston-Halperin, D. Lofgreen, R. K. Kawakami, D. K. Young, L. Coldren, A. C. Gossard and D. D. Awschalom
Phys. Rev. B 65, 041306(R) (2002)