1996 year
- Analytic solutions for the valence subband mixing at the zone center of a GaAs/AlxGa1-xAs quantum well under uniaxial stress perpendicular to the growth direction
G. Rau, P. C. Klipstein, V. Nikos Nicopoulos, and N. F. Johnson
Phys. Rev. B 54, 5700 (1996)
- Intersubband transitions in strained In0.07Ga0.93As/Al0.40Ga0.60As multiple quantum wells and their application to a two-colors photodetector
Danhong Huang and M. O. Manasreh
Phys. Rev. B 54, 5620 (1996)
- Recombination dynamics of localized excitons in a CdSe/ZnSe/ZnSxSe1-x single-quantum-well structure
Shigeo Yamaguchi, Yoichi Kawakami, Shizuo Fujita, Shigeo Fujita, Yoichi Yamada, Tomobumi Mishina, and Yasuaki Masumoto
Phys. Rev. B 54, 2629 (1996)
- Effect of Coulomb enhancement on optical gain in (Zn,Cd)Se/ZnSe multiple quantum wells
F. P. Logue, P. Rees, J. F. Heffernan, C. Jordan, J. F. Donegan, J. Hegarty, F. Hiei and A. Ishibashi
Phys. Rev. B 54, 16417 (1996)
- Direct observation of above-barrier quasibound states in InxGa1-xAs/AlAs/GaAs quantum wells
C. D. Lee, J. S. Son, J. Y. Leem, S. K. Noh, Kyu
Phys. Rev. B 54, 1541 (1996)
- High-pressure study of optical transitions in strained In0.2Ga0.8As/GaAs multiple quantum wells
G. H. Li, A. R. Goñi, K. Syassen, H. Q. Hou, W. Feng, and J. M. Zhou
Phys. Rev. B 54, 13820 (1996)
- Effect of strain on a second-order van Hove singularity in AlxGa1-xAs/InyGa1-yAs quantum wells
M. Kemerink, P. M. Koenraad, and J. H. Wolter
Phys. Rev. B 54, 10644 (1996)
- Binding energies and envelope functions of light-hole excitons in GaAs/InxGa1-xAs/GaAs strained quantum wells
Z. S. Piao, M. Nakayama, and H. Nishimura
Phys. Rev. B 54, 10312 (1996)
- Self-consistent determination of the band offsets in InAsxP1-x/InP strained-layer quantum wells and the bowing parameter of bulk InAsxP1-x
M. Beaudoin, A. Bensaada, R. Leonelli, P. Desjardins, R. A. Masut, L. Isnard, A. Chennouf and G. L'Espérance
Phys. Rev. B 53, 1990 (1996)
- Acousto-optic modulation of III-V semiconductor multiple quantum wells
D. L. Smith, Sh. M. Kogan, P. P. Ruden and C. Mailhiot
Phys. Rev. B 53, 1421 (1996)
- L-band recombination in InxGa1-xP/In0.5Al0.5P multiple quantum wells
D. Patel, K. Interholzinger, P. Thiagarajan, G. Y. Robinson, and C. S. Menoni
Phys. Rev. B 53, 12633 (1996)
- Hydrostatic-pressure coefficient of the direct band-gap energy of AlxGa1-xAs for x=0-0.35
Hyeonsik M. Cheong, J. H. Burnett, W. Paul, P. F. Hopkins, K. Campman, and A. C. Gossard
Phys. Rev. B 53, 10916 (1996)
- Pressure dependence of the photoluminescence of strained (001) and (111) InxGa1-xAs quantum wells
J. L. Sly and D. J. Dunstan
Phys. Rev. B 53, 10116 (1996)