2002 year
- Surface photovoltage studies of InxGa1
Gh. Dumitras, H. Riechert, H. Porteanu and F. Koch
Phys. Rev. B 66, 205324 (2002)
- Electronic states of ultrathin InAs/InP (001) quantum wells: A tight-binding study of the effects of band offset, strain, and intermixing
N. Shtinkov, P. Desjardins, and R. A. Masut
Phys. Rev. B 66, 195303 (2002)
- Electronic structure of InyGa1
S. A. Choulis, T. J. C. Hosea, S. Tomi, M. Kamal-Saadi, A. R. Adams, E. P. O'Reilly, B. A. Weinstein and P. J. Klar
Phys. Rev. B 66, 165321 (2002)
- Effect of overgrowth on shape, composition, and strain of SiGe islands on Si(001)
A. Hesse, J. Stangl, V. Holý, T. Roch, G. Bauer, O.G. Schmidt, U. Denker and B. Struth
Phys. Rev. B 66, 085321 (2002)
- Band-gap energy of InxGa1
J.-Y. Duboz, J. A. Gupta, Z. R. Wasilewski, J. Ramsey, R. L. Williams, G. C. Aers, B. J. Riel, and G. I. Sproule
Phys. Rev. B 66, 085313 (2002)
- Experimental determination of deformation potentials and band nonparabolicity parameters for PbSe
Huizhen Wu, Ning Dai, and Patrick J. McCann
Phys. Rev. B 66, 045303 (2002)
- Field-dependent carrier decay dynamics in strained InxGa1
Y. D. Jho, J. S. Yahng, E. Oh, and D. S. Kim
Phys. Rev. B 66, 035334 (2002)
- Ordering parameter and band-offset determination for ordered GaxIn1
Jun Shao, Achim Dörnen, Rolf Winterhoff, and Ferdinand Scholz
Phys. Rev. B 66, 035109 (2002)
- Reversible band-gap engineering in carbon nanotubes by radial deformation
O. Gülseren, T. Yildirim, S. Ciraci and Ç. Klç
Phys. Rev. B 65, 155410 (2002)