1998 year
- Optically Pumped Nuclear Magnetic Resonance Measurements of the Electron Spin Polarization in GaAs Quantum Wells near Landau Level Filling Factor nu = 1 / 3
P. Khandelwal, N. N. Kuzma, S. E. Barrett, L. N. Pfeiffer, and K. W. West
Phys. Rev. Lett. 81, 673 (1998)
- Polariton Motional Narrowing in Semiconductor Multiple Quantum Wells
J. J. Baumberg, A. P. Heberle, A. V. Kavokin, M. R. Vladimirova, and K. Köhler
Phys. Rev. Lett. 80, 3567 (1998)
- Pressure dependence of optical transitions in In0.15Ga0.85N/GaN multiple quantum wells
W. Shan, J. W. Ager III, W. Walukiewicz, E. E. Haller, M. D. McCluskey, N. M. Johnson, and D. P. Bour
Phys. Rev. B 58, R10191 (1998)
- Optical polarization relaxation in InxGa1-xAs-based quantum wells: Evidence of the interface symmetry-reduction effect
T. Guettler, A. L. C. Triques, L. Vervoort, R. Ferreira, Ph. Roussignol, P. Voisin, D. Rondi and J. C. Harmand
Phys. Rev. B 58, R10179 (1998)
- Resonant Raman scattering and photoluminescence in SiOx/CdSe multiple quantum wells
D. Nesheva, C. Raptis and Z. Levi
Phys. Rev. B 58, 7913 (1998)
- Effect of hydrostatic pressure on the Raman spectrum of GenSim multiple quantum wells with n <~ 4 and m <~ 7
M. Seon, M. Holtz, Ta-Ryeong Park, O. Brafman and J. C. Bean
Phys. Rev. B 58, 4779 (1998)
- Magnetic-field-induced delocalization in center-doped GaAs/AlxGa1-xAs multiple quantum wells
C. H. Lee, Y. H. Chang, Y. W. Suen and H. H. Lin
Phys. Rev. B 58, 10629 (1998)
- Recombination dynamics of free and localized excitons in GaN/Ga0.93Al0.07N quantum wells
P. Lefebvre, J. Allègre, B. Gil, A. Kavokine, H. Mathieu, W. Kim, A. Salvador, A. Botchkarev and Hadis Morkoç
Phys. Rev. B 57, R9447 (1998)
- Optically induced electric-field domains by bound-to-continuum transitions in n-type multiple quantum wells
H. Schneider, C. Mermelstein, R. Rehm, C. Schönbein, A. Sa
Phys. Rev. B 57, R15096 (1998)
- Exciton-light coupling in quantum wells: From motional narrowing to superradiance
Alexey V. Kavokin and Jeremy J. Baumberg
Phys. Rev. B 57, R12697 (1998)
- Localization of excitons in thermally annealed In0.14Ga0.86As/GaAs quantum wells studied by time-integrated four-wave mixing
W. Braun, L. V. Kulik, T. Baars, M. Bayer, and A. Forchel
Phys. Rev. B 57, 7196 (1998)
- First-principles optical properties of Si/CaF2 multiple quantum wells
Elena Degoli and Stefano Ossicini
Phys. Rev. B 57, 14776 (1998)
- Observation of Landau levels and excitons at room temperature in In0.53Ga0.47As/InP quantum wells
O. Jaschinski, M. Vergöhl, J. Schoenes, A. Schlachetzki and P. Bönsch
Phys. Rev. B 57, 13086 (1998)
- Intrasubband and intersubband transitions in lightly and heavily doped GaAs/AlxGa1-xAs multiple quantum wells
Qin-Sheng Zhu, X. B. Wang, Z. T. Zhong, X. C. Zhou, Y. P. He, Z. P. Cao, G. Z. Zhang, J. Xiao, X. H. Sun, H. Z. Yang and Q. G. Du
Phys. Rev. B 57, 12388 (1998)