Photoluminescence
- Studies of physical phenomena in semiconductor nanostructures using samples with laterally nonuniform layers. Photoluminescence of structures with n-type δ-doped layers
Yu. V. Khabarov, V. V. Kapaev, V. A. Petrov and G. B. Galiev
Semiconductors, 2006, Volume 40, Number 5, 05580569
- The optical properties of heterostructures with quantum-confined InGaAsN layers on a GaAs substrate and emitting at 1.3
N. V. Kryzhanovskaya, A. Yu. Egorov, V. V. Mamutin, N. K. Polyakov, A. F. Tsatsul
Semiconductors, 2005, Volume 39, Number 6, 07030708
- Lasing in Cd(Zn)Se/ZnMgSSe heterostructures pumped by nitrogen and InGaN/GaN lasers
I. V. Sedova, S. V. Sorokin, A. A. Toropov, V. A. Kaigorodov, S. V. Ivanov, P. S. Kop
Semiconductors, 2004, Volume 38, Number 9, 10991104
- Studies of physical phenomena in semiconductor nanostructures using samples with laterally nonuniform layers: Photoluminescence of tunneling-coupled quantum wells
Yu. V. Khabarov, V. V. Kapaev and V. A. Petrov
Semiconductors, 2004, Volume 38, Number 4, 04370446
- Room-temperature 1.5
A. A. Tonkikh, G. E. Tsyrlin, V. G. Talalaev, B. V. Novikov, V. A. Egorov, N. K. Polyakov, Yu. B. Samsonenko, V. M. Ustinov, N. D. Zakharov and P. Werner
Semiconductors, 2003, Volume 37, Number 12, 14061410
- InGaAs/InP heterostructures with strained quantum wells and quantum dots (λ=1.5
Z. N. Sokolova, D. A. Vinokurov, I. S. Tarasov, N. A. Gun
Semiconductors, 1999, Volume 33, Number 9, 10071009
- Polarization of in-plane photoluminescence from InAs/Ga(In)As quantum-well layers grown by metallorganic vapor-phase epitaxy
V. Ya. Aleshkin, B. N. Zvonkov, I. G. Malkina, Yu. N. Saf
Semiconductors, 1998, Volume 32, Number 10, 11191124
- Internal electric field in wurtzite ZnO∕Zn0.78Mg0.22O quantum wells
C. Morhain, T. Bretagnon, P. Lefebvre, X. Tang, P. Valvin, T. Guillet, B. Gil, T. Taliercio, M. Teisseire-Doninelli, B. Vinter, and C. Deparis
Phys. Rev. B 72, 241305(R) (2005)
- Excitonic and impurity-related optical transitions in Be δ-doped GaAs∕AlAs multiple quantum wells: Fractional-dimensional space approach
J. Kundrotas, A. Čerškus, S. Ašmontas, G. Valušis, B. Sherliker, M. P. Halsall, M. J. Steer, E. Johannessen, P. Harrison
Phys. Rev. B 72, 235322 (2005)
- Magneto-optics of two-dimensional electron gases modified by strong Coulomb interactions in ZnSe quantum wells
D. Keller, D. R. Yakovlev, G. V. Astakhov, W. Ossau, S. A. Crooker, T. Slobodskyy, A. Waag, G. Schmidt, and L. W. Molenkamp
Phys. Rev. B 72, 235306 (2005)
- Electronic and optical properties of Si∕SiO2 nanostructures. I. Electron-hole collective processes in single Si∕SiO2 quantum wells
N. Pauc, V. Calvo, J. Eymery, F. Fournel, and N. Magnea
Phys. Rev. B 72, 205324 (2005)
- Spatially selective laser cooling of carriers in semiconductor quantum wells
Danhong Huang, T. Apostolova, P. M. Alsing, and D. A. Cardimona
Phys. Rev. B 72, 195308 (2005)
- Singlet and triplet trion states in high magnetic fields: Photoluminescence and reflectivity spectra of modulation-doped CdTe/Cd0.7Mg0.3Te quantum wells
D. Andronikov, V. Kochereshko, A. Platonov, T. Barrick, S. A. Crooker, G. Karczewski
Phys. Rev. B 72, 165339 (2005)
- Nonparabolic band effects in GaAs∕AlxGa1−xAs quantum dots and ultrathin quantum wells
N. Schildermans, M. Hayne, V. V. Moshchalkov, A. Rastelli, O. G. Schmidt
Phys. Rev. B 72, 115312 (2005)
- Binding energies of positive and negative trions: From quantum wells to quantum dots
A. S. Bracker, E. A. Stinaff, D. Gammon, M. E. Ware, J. G. Tischler, D. Park, D. Gershoni, A. V. Filinov, M. Bonitz, F. Peeters, C. Riva
Phys. Rev. B 72, 035332 (2005)