X-ray scattering
- Effect of overgrowth on shape, composition, and strain of SiGe islands on Si(001)
A. Hesse, J. Stangl, V. Holý, T. Roch, G. Bauer, O.G. Schmidt, U. Denker and B. Struth
Phys. Rev. B 66, 085321 (2002)
- Optical and structural properties of metalorganic-vapor-phase-epitaxy-grown InAs quantum wells and quantum dots in InP
R. Leonelli, C. A. Tran, J. L. Brebner, J. T. Graham, R. Tabti, R. A. Masut and S. Charbonneau
Phys. Rev. B 48, 11135 (1993)
- Real-time x-ray studies of strain kinetics in InxGa1-xAs quantum-well structures
R. Clarke, W. Dos Passos, W. Lowe, B. G. Rodricks and C. Brizard
Phys. Rev. Lett. 66, 317 (1991)
- Exciton localization in submonolayer InAs/GaAs multiple quantum wells
R. Cingolani, O. Brandt, L. Tapfer, G. Scamarcio, G. C. La Rocca, and K. Ploog
Phys. Rev. B 42, 3209 (1990)
- X-ray analysis of the device structures of III-V compound semiconductors
Mai Zhen
Phys. Rev. B 41, 9930 (1990)
- Structural and optical properties of (100) InAs single-monolayer quantum wells in bulklike GaAs grown by molecular-beam epitaxy
O. Brandt, L. Tapfer, R. Cingolani, K. Ploog, M. Hohenstein, and F. Phillipp
Phys. Rev. B 41, 12599 (1990)