NSM Archive - Silicon Germanium (SiGe) - Transport Properties in High Electric Fields

SiGe - Silicon Germanium

Transport Properties in High Electric Fields

Electron steady-state drift velocity

SiGe. No data
Si. Electron drift velocity vs. electric field.
Solid lines: F||(111).
Dashed lines: F||(100).
Jacoboni et al. (1977).
see also Si. Transport Properties in High Electric Field
Si. Electron drift velocity vs. electric field at different temperatures.
F||(111).
Jacoboni et al. (1977).
see also Si. Transport Properties in High Electric Field
Ge. Electron drift velocity vs. electric field.
Solid lines: F||(100)
Solid lines: F||(111).
Jacoboni et al. (1981).
see also Ge. Transport Properties in High Electric Field
Ge. Electron drift velocity vs. electric field at different temperatures.
F||(100).
Ottaviani et al. (1973).
see also Ge. Transport Properties in High Electric Field
SiGe. No data
      Remarks Referens
Electron saturated drift velocity SiGe Vsat = cm/s No data  

Hole steady-state drift velocity

SiGe. No data
see also Si. Transport Properties in High Electric Field
see also Ge. Transport Properties in High Electric Field