NSM Archive - Silicon Germanium (SiGe) - Transport Properties in High Electric Fields

SiGe - Silicon Germanium

Transport Properties in High Electric Fields

Electron steady-state drift velocity

SiGe. No data

	Si. Electron drift velocity vs. electric field. Solid lines: F\|\|(111). Dashed lines: F\|\|(100). Jacoboni et al. (1977). see also Si. Transport Properties in High Electric Field
	Si. Electron drift velocity vs. electric field at different temperatures. F\|\|(111). Jacoboni et al. (1977). see also Si. Transport Properties in High Electric Field
	Ge. Electron drift velocity vs. electric field. Solid lines: F\|\|(100) Solid lines: F\|\|(111). Jacoboni et al. (1981). see also Ge. Transport Properties in High Electric Field
	Ge. Electron drift velocity vs. electric field at different temperatures. F\|\|(100). Ottaviani et al. (1973). see also Ge. Transport Properties in High Electric Field

SiGe. No data

			Remarks	Referens
Electron saturated drift velocity	SiGe	V_sat = cm/s	No data

Hole steady-state drift velocity

SiGe. No data
see also Si. Transport Properties in High Electric Field
see also Ge. Transport Properties in High Electric Field