NSM Archive - Silicon Germanium (SiGe) - Basic Electrical parameters

SiGe - Silicon Germanium

Electrical properties

Basic Parameter

Si1-xGex
see also Si. Electrical properties
and Ge. Electrical properties		   Remarks Referens
Breakdown field   <3·105V/cm 300 K Schaffler F. et al.(2001)
Mobility electrons μn (1396-4315x) cm2 V-1 s-1 0 x 0.3, 300 K
Mobility holes μp (450-865x) cm2 V-1 s-1 0 x 0.3, 300 K  
Diffusion coefficient electrons   (36-112x) cm2/s 0 x 0.3, 300 K  
Diffusion coefficient holes   (12-22x) cm2/s 0 x 0.3, 300 K  
Electron thermal velocity 2.4·105 m/s (x<0.85)
3.1·105 m/s (x>0.85)		 300 K  
Hole thermal velocity   (1.65+0,25x) m/s 300 K