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Characteristics and Properties

NSM Archive - Silicon Germanium (SiGe) - Band structure

Band structure and carrier concentration

Basic Parameters
Band structure
Intrinsic carrier concentration
Effective Density of States in the Conduction and Valence Band
Temperature Dependences
Dependences on Hydrostatic Pressure
Strain-Dependent Band Discontinuity
Effective Masses and Density of States
Dislocation Glide

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Basic Parameters

SiGe			Remarks	Referens
Energy gaps, Egindirect       (Δ conduction band min)	Si1-xGex	1.12-0.41x + 0.008x2 eV	300 K, x < 0.85
	Si (x=0)	1.12 eV	300 K, x = 0.	see Si. Band structure
Energy gaps, Egindirect       (L conduction band min)	Si1-xGex	1.86 - 1.2x eV	300 K, x > 0.85
	Ge (x=1)	0.66 eV	300 K, x = 1.	see Ge. Band structure
Conduction band
Energy separation   EΓ1	Si1-xGex	4175 - (2814 ± 55)x meV	70 K; 0 < x < 0.3, Linear Fitting Si1-xGex films on Si substrates	Ebner et al. (1998)
	Si (x=0)	3.4 eV	300 K	see Si. Band structure
	Ge (x=1)	0.8 eV	300 K	see Ge. Band structure
Eg(Γ-X)	Si1-xGex	0.8941 + 0.0421x+ 0.1691x2	calculated	Krishnamurti et al. (1983)
Eg(Γ-L)	Si1-xGex	0.7596 + 1.0860x+ 0.3306x2	calculated	Krishnamurti et al. (1983)
Energy separation EΓ2	Si1-xGex	(3400 ± 7) - (300 ± 40)x meV	70 K; 0 < x < 0.3, Linear Fitting Si1-xGex films on Si substrates	Ebner et al. (1998)
	Si (x=0)	4.2 eV	300 K	see Si. Band structure
	Ge (x=1)	3.2 eV	300 K	see Ge. Band structure
Valence band
Energy of spin-orbital splitting Eso	Si1-xGex	0.044 + 0.246x eV	300 K
	Si (x=0)	0.044 eV	300 K, x = 0.	see Si. Band structure
	Ge (x=1)	0.29 eV	300 K, x = 1.	see Ge. Band structure
Effective conduction band density of states	Si1-xGex	~ 2.8 x 1019cm-3	300 K, x < 0.85
	Si1-xGex	~ 1.0 x 1019cm-3	300 K, x > 0.85
	Si (x=0)	2.8 x 1019cm-3	300 K, x = 0.	see Si. Band structure
	Ge (x=1)	1.0 x 1019cm-3	300 K, x = 1.	see Ge. Band structure
Effective valence band density of states	Si (x=0)	1.8 x 1019cm-3	300 K, x = 0.	see Si. Band structure
	Ge (x=1)	0.5 x 1019cm-3	300 K, x = 1.	see Ge. Band structure
Intrinsic carrier concentration	Si1-xGex		see Si1-xGex. Intrinsic carrier concentration
	Si (x=0)	1 x 1010 cm-3	300 K, x = 0.	see Si. Band structure
	Ge (x=1)	2 x 1013 cm-3	300 K, x = 1.	see Ge. Band structure
Energy Gaps vs. Composition
E1	Si1-xGex	3452 - (1345 ± 25)x meV	70 K; 0 < x < 0.3, Linear Fitting Si1-xGex films on Si substrates	Ebner et al. (1998)
E'1	Si1-xGex	5402 ± 25 + (280 ± 120)x meV
E2 (X)	Si1-xGex	4351 ± 38 + (210 ± 180)x meV
E2 (Σ)	Si1-xGex	4518 ± 129 + (880 ± 600)x meV
Eg(Γ-X)	Si1-xGex	0.8941 + 0.0421x+ 0.1691x2	calculated	Krishnamurti et al. (1983)
Eg(Γ-L)	Si1-xGex	0.7596 + 1.0860x+ 0.3306x2	calculated	Krishnamurti et al. (1983)

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Band structure

Compositional dependence of band gaps (calculated):

 

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