NSM Archive - Silicon Carbide (SiC) - Recombination Parameters
Recombination Parameters
| Remarks | Referens | |||
| 4H-SiC. Pure n-type material |
The longest lifetime of holes tp | ~= 6.0 x 10-7 c | 300 K | |
| Diffusion length Lp = (Dp x tp)1/2 | ~= 12 μm c | 300 K | ||
| 4H-SiC. Pure p-type material |
The longest lifetime of electrons tn | ~= 10-9 c | 300 K | |
| Diffusion length Ln = (Dn x tn)1/2 | ~= 1.5 μm | 300 K | ||
| 4H-SiC | Surface Recombinaton Velocity | 103 - 105 | 300 K | Galeskas et al. (1997); Grivickas et al. (1997); Neudeck & Fazi (1997); Kimoto et al. (1999) |
| 4H-SiC | Radiative recombination coefficient B | 1.5 x 10-12 cm3/s | 300 K, estimation | Galeskas et al. (1997) |
| 4H-SiC | Auger coefficient Cn | 5.0 x 10-31 cm6/s | 300 K | Galeskas et al. (1997) |
| Auger coefficient Cp | 2.0 x 10-31 cm6/s | 300 K | Galeskas et al. (1997) | |
| Auger coefficient C = Cn + Cp | 7.0 x 10-31 cm6/s | 300 K | Galeskas et al. (1997) | |
| 6H-SiC. Pure n-type material |
The longest lifetime of holes tp | ~= 4.5 x 10-7 c | 300 K | |
| Diffusion length Lp = (Dp x tp)1/2 | ~= 10 μm c | 300 K | ||
| 6H-SiC. Pure p-type material |
The longest lifetime of electrons tn | ~= 10-9 c | 300 K | |
| Diffusion length Ln = (Dn x tn)1/2 | ~= 1 μm | 300 K | ||
| 6H-SiC | Surface Recombinaton Velocity | 104 - 105 | 300 K | |
| 6H-SiC | Radiative recombination coefficient B | ~=1.5 x 10-12 cm3/s | 300 K. | Galeskas et al. (1997) The values measured in 4H-SiC can be used for estimations. |
| 6H-SiC | Auger coefficient Cn | ~=5.0 x 10-31 cm6/s | 300 K | |
| Auger coefficient Cp | ~=2.0 x 10-31 cm6/s | 300 K | ||
| Auger coefficient C = Cn + Cp | ~=7.0 x 10-31 cm6/s | 300 K |
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4H-SiC. Hole lifetime tp
vs. reciprocal temperature measured in the base of a high-voltage 4H-SiC
rectifier diode. Ivanov et al. (1999) |
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4H-SiC. Hole lifetime tp
vs. reciprocal temperature measured using the photoluminescence decay
technique. Kordina et al. (1996) |
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4H-SiC. Reciprocal effective hole lifetime 1/t
vs. perimeter-to-area P/A ratio for 4H-SiC p-n
structure. The slope of the dependence defines the surface recombination velocity according to the equation 1/t= 1/tp + s x (A/P), where tp is the volume hole lifetime. Neudeck & Fazi (1997) |
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4H-SiC. The carriers lifetime vs. carrier density. Solid curve is calculated to fit experimental data: t = 2.6 x 10-7 s; B = 1.5 x 10-12 cm3/s; C = 7 x 10-31 cm6/s. Galeskas et al. (1997) |
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6H-SiC. Reciprocal effective hole lifetime 1/t
vs. perimeter-to-area P/A ratio for 6H-SiC p-n
structure. The slope of the dependence defines the surface recombination velocity according to the equation 1/t= 1/tp + s x (A/P), where tp is the volume hole lifetime. Kimoto et al. (1999) |