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Characteristics and Properties

NSM Archive - Silicon Carbide (SiC) - Optical properties

Optical properties

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			Remarks	Referens
Dielectric constant (static)	3C-SiC	ε0 ~= 9.72	300 K	Patric & Choyke (1970)
	4H-SiC	The value of 6H-SiC dielectric constant is usually used	300 K
Dielectric constant (static, ordinary direction)	6H-SiC	ε0,ort ~= 9.66	300 K	Patric & Choyke (1970)
Dielectric constant (static, extraordinary direction)	6H-SiC	ε0, || ~= 10.03	300 K	Patric & Choyke (1970)
Ratio between the static dielectric constant (ordinary and extraordinary direction)	6H-SiC	ε0,ort / ε0, || ~= 0.9631	300 K
Dielectric constant (high frequency)	3C-SiC	6.52	300 K	Patric & Choyke (1970)
	4H-SiC	The value of 6H-SiC dielectric constant is usually used	300 K
Dielectric constant (high frequency, ordinary direction)	6H-SiC	εort ~= 6.52	300 K	Patric & Choyke (1970)
Dielectric constant (high frequency, extraordinary direction)	6H-SiC	ε || ~= 6.70	300 K	Patric & Choyke (1970)
Infrared refractive index	3C-SiC	~=2.55	300 K	Goldberg et al.(2001)
	4H-SiC	~=2.55 (c axis) ~=2.59 ( ||c axis)	300 K	Goldberg et al.(2001)
	6H-SiC	~=2.55 (c axis) ~=2.59 ( ||c axis)	300 K	Goldberg et al.(2001)
Refractive index n(λ)	3C-SiC	n(λ)~= 2.55378 + 3.417 x 104·λ-2	300K, 467nm < λ< 691nm	Shaffer & Naum (1969)
	4H-SiC	n0(λ)~= 2.5610 + 3.4 x 104·λ-2   ne(λ)~= 2.6041 + 3.75 x 104·λ-2	300K, 467nm < λ< 691nm	Shaffer & Naum (1971)
	6H-SiC	n0(λ)~= 2.55531 + 3.34 x 104·λ-2  ne(λ)~= 2.5852 + 3.68 x 104·λ-2	300K, 467nm < λ< 691nm	Shaffer & Naum (1971)
			also see Refractive index n vs. wavelength and photon energy	Shaffer & Naum (1971)
Radiative recombination coefficient	4H-SiC	1.5 x 10-12 cm3 s-1	300 K, estimate	Goldberg et al.(2001)
Optical photon energy	3C-SiC	102.8 meV	300 K	Goldberg et al.(2001)
	4H-SiC	104.2 meV
	6H-SiC	104.2 meV

	3C-SiC. Phonon dispersion relations Derived from an eight-parameter bond-bending force model [Kushawa (1982)]. Circles experimental. [Kushawa (1982)].
	3C-SiC. Phonon dispersion relations Derived from a real-space formalism based on scattering theory. Circles experimental. Lee & Joannopoulos (1982)
	4H-SiC, 6H-SiC, 15R-SiC, 21R-SiC. Phonon dispersion relationsvs. reduced wavevector. Along the axial direction Feldman et al. (1982)

phonon wavenumbers:				Remarks	Referens
3C-SiC	νTO(Γ)	796.2(3) cm-1		T=300K, Raman spectroscopy	Olego et al. (1982a)
		783-796 cm-1		T=300K	Karch et al. (1994), Nakashima & Tahara (1989), Feidman et al. (1968), Olego & Cardona (1982)
	νLO(Γ)	972.2(3) cm-1		T=300K, Raman spectroscopy	Olego et al. (1982a)
		829 cm-1		T=300K	Karch et al. (1994), Nakashima & Tahara (1989), Feidman et al. (1968), Olego & Cardona (1982)
	νTA(L)	266 cm-1		T=300K	Olego et al. (1982b), Karch et al. (1994), Nakashima & Tahara (1989), Feidman et al. (1968), Olego & Cardona (1982)
		261-266 cm-1
	νLA(L)	610 cm-1
	νTO(L)	765-766 cm-1
	νLO(L)	837-838 cm-1
	νTA(X)	366-373 cm-1
	νLA(X)	629-640 cm-1
	νTO(X)	755-761 cm-1
	νLO(X)	829 cm-1

main phonon energies:				Remarks	Referens
4H-SiC	TA1	46.7 meV			Freitas (1995)
	TA2	51.4 meV 53.4 meV
	LA	76.9 meV 78.8 meV
	TO1	95.0 meV
	LO	104.0 meV 104.3 meV
6H-SiC	TA	36.3 meV		discussion of free exciton replica in wavelength modulated absorption	Humphreys (1981)
	TA1	46.3 meV			Humphreys (1981) , Freitas (1995)
	TA2	53.5 meV
	LA	53.3 meV			Humphreys et al. (1981)
		77.0 meV			Humphreys et al. (1981), Freitas (1995)
	TO1	94.7 meV			Freitas (1995)
	TO2	95.6 meV			Humphreys et al. (1981), Freitas (1995)
	LO	104.2 meV			Humphreys et al. (1981), Freitas (1995)
		104.7 meV			Humphreys et al. (1981)

 

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	3C-SiC. Refractive index n vs. wavelength. 300 K               n(λ)~= 2.55378 + 3.417 x 104·λ-2   Shaffer et al. (1971)
	2H-SiC, 4H-SiC, 6H-SiC, 15R-SiC. Refractive index vs. wavelength. Powell (1972)
	4H-SiC. Refractive index n vs. wavelength. 300 K 1 - directions c axis (n0(λ)); 2 - directions ||c axis (ne(λ)).           n0(λ)~= 2.5610 + 3.4 x 104·λ-2             ne(λ)~= 2.6041 + 3.75 x 104·λ-2 Shaffer et al. (1971)
	6H-SiC. Refractive index n vs. wavelength. 300 K 1 - directions c axis (n0(λ)); 2 - directions ||c axis (ne(λ)).           n0(λ)~= 2.55531 + 3.34 x 104·λ-2              ne(λ)~= 2.5852 + 3.68 x 104·λ-2 Shaffer et al. (1971)
	4H-SiC, 6H-SiC. Birefringence (ne - n0) vs. wavelength. 300 K Shaffer et al. (1971)
	3C-SiC. Reflectance R vs. photon energy. 300 K 1 - Logothetidis and Petalas (1996); 2 - Lambrecht et al. (1994)
	4H-SiC. Reflectance R vs. photon energy. 300 K Lambrecht et al. (1993)
	6H-SiC. Reflectance R vs. photon energy. 300 K 1 - Logothetidis and Petalas (1996); 2 - Lambrecht et al. (1994)
	6H-SiC. Reflectance R vs. wavelength. 300 K   c axis Spitzer et al. (1959)
	6H-SiC. Reflectance R vs. wavelength. 300 K   || c axis Spitzer et al. (1959)

	3C-SiC, 4H-SiC, 6H-SiC. The absorption coefficient α1/2 vs. photon energy. T=4.2 K T=4.2 K Light-polarized   E c axis Choyke (1969)
	3C-SiC. The absorption coefficient vs. photon energy for different electron concentrations T=300 K 1 - Nd = 5 x 1016 cm-3 ; 2 - Nd = 7 x 1016 cm-3 . Solid lines: α = (hν)2 ; Experimental points - Solangi & Chaudhry (1992)
	3C-SiC. The absorption coefficient vs. photon energy for different electron concentrations T=300 K 1 - relatively pure crystal; 2 - Nd = 1019 cm-3 Patrick & Choyke (1969)
	4H-SiC. The absorption coefficient vs. photon energy for different electron concentrations T=300 K Low-doped samples.  E c axis. Sridhara et al. (1998)
	6H-SiC. The absorption coefficient vs. photon energy at different temperatures. 1 - T = 293 K (20°C); 2 - T = 573 K (300°C); 3 - T = 873 K (600°C); 4 - T = 1173 K (900°C); 5 - T = 1473 K (1200°C); 6 - T = 1773 K (1500°C). Groth & Kauer (1961)
	6H-SiC. The absorption coefficient vs. photon energy. T = 300 K Philipp & Taft (1960)
	6H-SiC. The absorption coefficient vs. photon energy. T = 300 K Philipp & Taft (1960)
	6H-SiC. The absorption coefficient vs. photon energy. T = 300 K   c axis and || c axis. Nd - Na ~= 3.4 x 1018 cm-3 Radovanova (1973)
	6H-SiC. The absorption coefficient vs. photon energy at different temperatures   || c axis, Nd - Na ~= 2.0 x 1018 cm-3. 1 - T = 78 K; 2 - T = 300 K; 3 - T = 390 K; 4 - T = 550 K; 5 - T = 810 K (1200°C); Dubrovskii et al. (1973)
	6H-SiC. The absorption coefficient vs. photon energy at different temperatures   c axis, Nd - Na ~= 1.0 x 1019 cm-3. 1 - T = 80 K; 2 - T = 300 K; 3 - T = 450 K; 4 - T = 640 K; 5 - T = 930 K; 6 - T = 1100 K; Dubrovskii & Radovanova (1973)
	6H-SiC doped with B. The absorption coefficient vs. photon energy at different temperatures. 1 - T = 300 K; 2 - T = 400 K; 3 - T = 500 K; 4 - T = 600 K; 5 - T = 700 K; 6 - T = 800 K. Tairov & Tsvetkov (1988)

6H-SiC. The absorption coefficient vs. wavelength at different Nd - Na values. T = 300 K. c axis 1 - Nd - Na = 1.6 x 1018 cm-3; 2 - Nd - Na = 2.7 x 1018 cm-3; 3 - Nd - Na = 4.0 x 1018 cm-3; 4 - Nd - Na = 4.8 x 1018 cm-3; 5 - Nd - Na = 5.8 x 1018 cm-3; 6 - Nd - Na = 6.3 x 1018 cm-3; 7 - Nd - Na = 1.3 x 1019 cm-3; 8 - Nd - Na = 1.6 x 1019 cm-3; 9 - Nd - Na = 2.6 x 1019 cm-3; 10- Nd - Na = 3.3 x 1019 cm-3; 11- Nd - Na = 4.0 x 1019 cm-3; Radovanova (1973)

	4H-SiC. The infrared absorption coefficient vs. wavelength. 1 - T = 80 K; 2 - T = 300 K.   E c axis.  Nd - Na = 1017 cm-3 Radovanova (1973)
	4H-SiC. The infrared absorption coefficient vs. wavelength. 1 - T = 80 K; 2 - T = 300 K.   E c axis.  Nd - Na = 1017 cm-3 Dubrovskii & Radovanova (1971)
	4H-SiC. Free carrier absorption coefficient vs. wavelength   c axis and || c axis. T = 300 K.  Nd - Na = 3 x 1017 cm-3 Radovanova (1973)
	6H-SiC. The absorption coefficient vs. temperature at different wavelength λ. 1 - λ = 1.49 µm; 2 - λ = 2.0 µm; 3 - λ = 2.25 µm; 4 - λ = 3.03 µm; 5 - λ = 3.52 µm; Groth & Kauer (1961)
	6H-SiC. The absorption coefficient α vs. wavelength at different temperature. 1 - α~λ2.6;       - T = 293 K (20°C); 2 - α~λ2.2     - T = 673 K (400°C);    3 - α~λ1.95   - T = 1273 K (1000°C) . Groth & Kauer (1961)

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