NSM Archive  Silicon Carbide (SiC)  Impact Ionization
Impact Ionization
Impact Ionization
Ionization rates
Remarks  Referens  
Electron ionization rates  α_{i} = α_{0} x exp(E_{i}
/E), where α_{0} = 4.57 x 10^{8} 1/cm, E_{i} = 5.24 x 10^{7} V/cm 
300 K  Kyuregyan & Yurkov (1989) 
Hole ionization rates  β_{i} = β_{0} x exp(E_{i}
/E), where β_{0} = 5.13 x 10^{6} 1/cm, E_{i} = 1.57 x 10^{7} V/cm 
300 K  Kyuregyan & Yurkov (1989) 
β_{i} = β_{0} x exp(E_{po}/E)
where β_{0} = 6.3 x 10^{6} 1.07 x 10^{4} T (1/cm),
E_{po} = 1.8 x 10^{7} (V/cm)
3CSiC. Calculated Hole ionization rates vs. inverse electric field. T = 300 K. Bellotti et al. (1999) 

4HSiC. Experimental Hole ionization rates vs. inverse electric field. T = 300 K. Raghunathan & Baliga (1999) 

6HSiC. Experimental Hole ionization rates vs. inverse electric field
at different temperatures:. T = 300 K; 340K; 380K; 400K; 450K. Raghunathan & Baliga (1999) 

4HSiC. Ionization rates for electrons & holes as a function of
inverse electric field. T = 300 K. Konstantinov et al. (1997) 

6HSiC. Electron (lines l'5') and Hole (lines 15) ionization
rates vs. inverse electric field at different temperatures. 1  1': T = 294 K; 2  2': T = 373 K; 3  3': T = 473 K; 4  4': T = 573 K; 5  5': T = 673 K. Konstantinov et al. (1989) 
Temperature Dependence of Breakdown Voltage
4HSiC
Remarks  Referens  
Temperature coefficient of the breakdown voltage : 
4HSiC  b=1/V (dV/dT) = 2.6 x 10^{4} K^{1}  300573 K; V_{br}~270290 V; asymmetrical p^{+}n SiC structures 
Vasilevskii et al. (2000) 
4HSiC  b=1/V (dV/dT) = (810) x 10^{5} K^{1}  300573 K; V_{br}~22 V; symmetrical p^{+}n^{+} SiC structures 
Vasilevskii et al. (2003) 
4HSiC. Dependences of the breakdown voltage & breakdown field
vs. doping level abrupt p^{+}n functions T = 300 K. Konstantinov et al. (1997) 

4HSiC. Normalized Breakdown voltage vs. temperature for uniform
breakdown of abrupt p^{+}n. T = 300 K. Breakdown voltage : 1 452 V; 2  452 V. Konstantinov et al. (1998) 
6HSiC
Temperature coefficient of the hole ionization rates is negative (temperature coefficient of breakdown voltage of 6HSiC is positive) in the material with the small concentration of the traps. On the other hand, in the material with large concentration of the traps, the temperature coefficient of the hole ionization rates is positive.Temperature coefficient of breakdown voltage in ntype of 6HSiC is positive for the field direction Ec in the material with the small concentration of the traps.
There are two schools of thought regarding the temperature dependence of breakdown voltage in 6HSiC for the field direction Ec. The first one explains the negative temperature coefficient by the discontinuity of the electron energy spectrum for motion along c axis [Konstantinov (1989), Konstantinov et al. (1998)]. The second school states that the negative temperature coefficient of breakdown for Ec is attributed to the traps in the material.
6HSiC. Dependence of the breakdown voltage abrupt p^{+}n. T = 300 K; Kyuregyan & Yurkov (1989) 

6HSiC. Hole ionization rates vs. inverse electric field at two
temperatures for defective and defective free materials. T = 300 K; 450K. Raghunathan & Baliga (1999) 

6HSiC. Normalized breakdown voltage vs. temperature. Ec Konstantinov et al. (1998) 

6HSiC. Breakdown voltage temperature coefficient β = (d/dT)(ln
V_{i}) vs. temperature. Ec Anikin et al. (1988) 

6HSiC. Temperature coefficient of breakdown voltage vs. temperature. asymmetrical p^{+}n; V_{br}~ 80 V Vassilevski et al. (1993) 