NSM Archive - Silicon Carbide (SiC)

SiC - Silicon Carbide
Basic Parameters at 300 K
Band structure and carrier concentration
Basic Parameters
Band Structure
Intrinsic carrier concentration
Effective Density of States in the Conduction and Valence Band
Temperature Dependences
Dependence on Hydrostatic Pressure
Energy Gap Narrowing at High Doping Levels
Effective Masses and Density of States
Donors and Acceptors

Electrical Properties
Basic Parameters of Electrical Properties
Mobility and Hall Effect
Transport Properties in High Electric Fields.
Impact Ionization.
Recombination Parameters.
Optical properties
Thermal properties
Basic parameters
Thermal conductivity
Lattice properties
Mechanical properties, elastic constants, lattice vibrations
Basic Parameters
Elastic Constants
Acoustic Wave Speeds
Phonon Frequencies

Piezoelectric, Thermoelectic and Magnetic Properties
Impurities and defects.
References

Forum SiC on Physical Properties of Semiconductors

Announcement.
Dear colleagues,
If you have new information of SiC physical properties [links, papers (.pdf, .doc, .tif...)] and would like to present it on this website Electronic archive: "New Semiconductor Materials. Characteristics and Properties" please contact us.
Thank you in advance, Vadim Siklitsky
Webmaster & co-author of NSM-archive.