Thermal properties of Indium Antimonide (InSb)

Thermal properties
Bulk modulus | 4.7·1011 dyn cm-1 |
Melting point | 527 °C |
Specific heat | 0.2 J g-1°C-1 |
Thermal conductivity | 0.18 W cm-1 °C-1 |
Thermal diffusivity | 0.16 cm2 s-1 |
Thermal expansion, linear | 5.37·10-6 °C-1 |
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Temperature dependence of thermal conductivity n-InSb.
Electron concentration at 78 K n (cm-3): 1. 2·1014; 2. 4.8·1016; 3. 4·1018. (Kosarev et al. [1971]). Solid line shows the temperature dependence of thermal conductivity at high temperatures (Busch and Steigmeier [1961]). |
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Temperature dependence of thermal conductivity p-InSb. Electron concentration at 78K p (cm-3): 1. 2.7·1014; 2. 5.3·1015; 3. 7.2·1017; 4. 6·1018. (Kosarev et al. [1971]). |
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Temperature dependence of specific heat at constant pressure. 1. - (Piesbergen [1963]); 2. - (Okhotin et al. [1972]); |
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Temperature dependence of linear expansion coefficient (low temperatures) (Sparks and Swenson [1967]). |
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Temperature dependence of linear expansion coefficient (high temperatures) (Gibbons [1958]). |
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Temperature dependence of Sb saturation vapor pressure (Nesmeyanov et al. [1960]). |