Band structure and carrier concentration of Indium Phosphide (InP)

Band structure and carrier concentration
Basic ParametersTemperature Dependences
Dependences on Hydrostatic Pressure
Energy Gap Narrowing at High Doping Levels
Effective Masses
Donors and Acceptors
Basic Parameters
Energy gap | 1.344 eV |
Energy separation (EΓL) between Γ and L valleys | 0.59 eV |
Energy separation (EΓX) between Γ and X valleys | 0.85 eV |
Energy spin-orbital splitting | 0.11 eV |
Intrinsic carrier concentration | 1.3·107 cm-3 |
Intrinsic resistivity | 8.6·107Ω·cm |
Effective conduction band density of states | 5.7·1017 cm-3 |
Effective valence band density of states | 1.1·1019 cm-3 |
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Band structure and carrier concentration of InP. Important minima of the conduction band and maxima of the valence band. 300 K. Eg = 1.34eV; EL = 1.93 eV; EX = 2.19 eV; Eso = 0.11 eV |
Temperature Dependences
Temperature Dependences Temperature dependence of the energy gap
Eg = 1.421 - 4.9·10-4·T2/(T+327) (eV),where T is temperature in degrees K (0 < T < 800).
Temperature dependence of the energy separation between Γ and X valleys
EΓX = 0.96 - 3.7·10-4·T (eV),where T is temperature in degrees K (0 < T < 300).
Effective density of states in the conduction band
Nc≈1.1·1014·T3/2 (cm-3).Effective density of states in the valence band
Nv≈2.2·1015·T3/2 (cm-3).![]() |
The temperature dependence of the intrinsic carrier concentration. |
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Fermi level versus temperature for different concentrations of shallow donors and acceptors. |
Dependences on Hydrostatic Pressure
Eg = Eg(0) + 8.4·10-3P - 1.8·10-5P2 (eV)EL = EL(0) + 4.6·10-3P (eV),
EX = EX(0) + 2·10-3P (eV),
where P is pressure in kbar.
Energy Gap Narrowing at High Doping Levels
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Energy gap narrowing versus donor (curve 1 and experimental points) and acceptor (curve 2) doping density,
T = 300 K. Curve 1 and experimental points (Bugajski and Lewandowski [1985]); Curve 2 (Jain et al. [1990]). |
For n-type InP:
ΔEg≈22.5·10-9·Nd1/3 (eV)(Bugajski and Lewandowski [1985])
For p-type InP
ΔEg≈10.3·10-9·Na1/3 + 4.43·10-7·Na1/4 + 3.38·10-12·Na1/2 (eV)(Jain et al. [1990]).
Effective Masses
Electrons: | |
For Γ-valley | mΓ = 0.08mo |
The are 4 equivalent L-valleys in the conduction band: | |
in one L-valley | mL = 0.25mo |
for all L-valley | mLd = 0.63mo |
The are 3 equivalent X-valleys in the conduction band: | |
in one X-valley | mX = 0.32mo |
for all X-valley | mXd = 0.66mo |
Holes: | |
Heavy | mh = 0.6mo |
Light | mlp = 0.089mo |
Split-off band | mso = 0.17mo |
Effective mass of density of states | mv = 0.6mo |
Donors and Acceptors
Ionization energies of shallow donors (eV) ~0.0057:
S, Si, Sn, GeIonization energies of shallow acceptors (eV):
C | Hg | Zn | Cd | Si | Cu | Be | Mg | Ge | Mn |
0.04 | 0.098 | 0.035 | 0.057 | 0.03 | 0.06 | 0.03(MBE) | 0.03(MBE) | 0.021 | 0.27 |