NSM Archive - Indium Nitride (InN) - Optical properties
Optical properties
| Remarks | Referens | ||
| Dielectric constant (static) | 15.3 | 300 K | Zubrilov (2001) |
| Dielectric constant (static, ordinary direction) | ε0,ort = 13.1 | 300 K | Davydov et al. (1999) |
| Dielectric constant (static, extraordinary direction) | ε0, || = 14.4 | 300 K | Davydov et al. (1999) |
| Ratio between the static dielectric constant (ordinary and extraordinary direction) |
ε0,ort / ε0, || = 0.91 | 300 K, independed of dielectric constant at high frequency | Davydov et al. (1999) |
| Dielectric constant (high frequency) | 8.4 | 300 K, using the Lyddane-Sachs-Teller relation (ε0/εhigh = ω2LO / ω2TO) |
Tansley (1994) |
| 9.3 | heavily doped film, infrared reflectivity |
Tyagai et al. (1977) | |
| 5.8 | Inushima et al. (1999) | ||
| Infrared refractive index | ~=2.9 | 300 K | Zubrilov (2001) |
| 2.56 | 300 K, interference metod; n = 3-1020cm-3
λ = 1.0 μm |
Tyagai et al. (1977) | |
| 2.93 | λ = 0.82μm | ||
| 3.12 | λ = 0.66μm | ||
| also see Refractive index n vs. wavelength and photon energy | |||
| Radiative recombination coefficient | 2.0 x 10-10 cm3 s-1 | 300 K | Zhou et al. (1995) |
| Optical phonon energy | 73 meV | 300 K | Zubrilov (2001) |
| phonon wavenumbers: | Remarks | Referens | |
| νTO(Γ) | 478 cm-1 |
T=300K. reflectivity, Kramers-Kronig analysis |
Osamura et al. (1975) |
| νLO(Γ) | 694 cm-1 |
| A1 - LO | 586 cm-1 | Davydov et al. (1999) |
| A1 - TO | 447 cm-1 | |
| E1 - LO | 593 cm-1 | |
| E1 - TO | 476 cm-1 | |
| E2 (low) | 87 cm-1 | |
| E2 (high) | 488 cm-1 |
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InN, Wurtzite. Polarized Raman spectra for the nominally un-doped
InN layer grown on a (0001) sapphire substrate. Room-temperature. Davydov et al. (1999) |
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InN, Wurtzite. First-order polarized Raman spectra for the nominally
undoped InN layer grown on a (1102) sapphire substrate. Room-temperature. The inset shows the imaginary part of the dielectric function for A1 (TO) and E1(TO) phonons obtained by the Kramers-Kroning analysis of the IR reflectivity data in different geometries: E || c[A1(TO)] and E
c[A1(TO)].Davydov et al. (1999) |
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InN, Wurtzite. Refractive index n vs. wavelength. 300 K Tyagai et al. (1977) |
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InN, Wurtzite. Refractive index n vs. photon energy . 300 K Djurisic & Li (1999) |
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InN, Wurtzite. Reflectance R vs. wavelength. 300 K Tyagai et al. (1977) |
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InN, Wurtzite. The absorption coefficient vs. photon energy. 300 K Samples with free electron concentration: (1) - 5 x 1018 cm-3 (T = 300° C); (2) - 3-6 x 1020 cm-3 (T = 300° C); (3) - 3-6 x 1020 cm-3 (T = 150° C). Trainor & Rose (1974) |
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InN, Wurtzite. The squared absorption coefficient versus photon energy (1) - T = 300 K; (2) - T = 4.2 K. Puychevrier & Menoret (1976) |
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InN, Wurtzite. The squared absorption coefficient versus photon energy (1) - T = 300 K; (2) - T = 4.2 K. Guo & Yoshida (1994) |
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InN, Wurtzite. Infrared absorption coefficient versus photon energy
for the samples with different electron concentrations n.
n: a - 3x 1020 cm-3, b - 5 x 1018 cm-3, c - 1019 cm-3, d - 1018 cm-3, e - 5x 1016 cm-3 Tansley & Foley (1986) |