NSM Archive - Indium Nitride (InN) - Mobility and Hall Effect
Mobility and Hall Effect
| Wurtzite InN | Remarks | Referens | |
| Conductivity σ | 2 ÷3 Ω-1 cm-1 | 300 K ; temperature coefficient of resistivity 3.7·10-3 K-1 at 200...300K for pressed powder |
Juza et al. (1956); Hovel & Cuomo (1972); Trainor & Rose (1974) |
| Mobility electrons μn | 250(50) cm2 V-1 s-1 | 300 K ; see also Electron mobility vs. temperature | Hovel & Cuomo (1972) |
| 20 cm2 V-1 s-1 | Trainor & Rose (1974) | ||
| 35 ... 50 cm2 V-1 s-1 | Marasina et al. (1977) |
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InN, Wurtzite. Electron Hall mobility vs. temperature for three
samples with RT and carrier concentrations: (1) - 5.3x1016 cm-3; (2) - 7.5x1016 cm-3; (3) - 1.8x1017 cm-3. Broken line: calculated ionized impurity scattering mobility, Dot-dashed line: empirical high-temperature mobility (μ~T-3) for sample (1) Solid lines: total mobility calculated for each sample. Tansley & Tansley (1984) |
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InN, Wurtzite, polycrystalline films. Electron Hall mobility versus
temperature for different doping levels and different degrees of compensation
θ = Na/Nd. 1 - Nd = 5.1 x 1016 cm-3, θ ~= 0.3; 2 - Nd = 8.7 x 1016 cm-3, θ ~= 0.6; 3 - Nd |