Band structure and carrier concentration of Indium Arsenide (InAs)
Band structure and carrier concentration
Basic ParametersTemperature Dependences
Dependence of the Energy Gap on Hydrostatic Pressure
Energy Gap Narrowing at High Doping Levels
Effective Masses
Donors and Acceptors
Basic Parameters
Energy gap | 0.354 eV |
Energy separation (E_{ΓL}) between Γ and L valleys | 0.73 eV |
Energy separation (E_{ΓX}) between Γ and X valleys | 1.02 eV |
Energy spin-orbital splitting | 0.41 eV |
Intrinsic carrier concentration | 1·10^{15} cm^{-3} |
Intrinsic resistivity | 0.16 Ω·cm |
Effective conduction band density of states | 8.7·10^{16} cm^{-3} |
Effective valence band density of states | 6.6·10^{18} cm^{-3} |
Band structure and carrier concentration of InAs. Important minima of the conduction band and maxima of the valence band. E_{g}= 0.35 eV E_{L}= 1.08 eV E_{X}= 1.37 eV E_{so} = 0.41 eV |
Temperature Dependences
Temperature dependence of the direct energy gap
E_{g} = 0.415 - 2.76·10^{-4}xT^{2}/(T+83) (eV),where T is temperature in degrees K (0 <T < 300).
(Fang et al. [1990]).
Effective density of states in the conduction band
N_{c}≈1.68·10^{13}·T^{3/2} (cm^{-3}).
Effective density of states in the valence band
N_{v}≈ 1.27·10^{15}·T^{3/2}(cm^{-3}).
The temperature dependences of the intrinsic carrier concentration. | |
Fermi level versus temperature for different concentrations of shallow donors and acceptors. |
Dependences on Hydrostatic Pressure
E_{g}≈E_{g}(0) + 4.8·10^{-3}P (eV)where P is pressure in kbar (Edwards and Drickamer[1961]).
E_{L}≈ E_{L}(0) + 3.2·10^{-3}P (eV)
Energy Gap Narrowing at High Doping Levels
Energy gap narrowing versus donor (Curve 1) and acceptor (Curve 2 ) doping density. Curves are calculated according (Jain et al. [1990]). Points show experimental results for n-InAs (Semikolenova et al. [1978]). |
For n-type InAs
ΔE_{g} = 14.0·10^{-9}·N_{d}^{1/3} + 1.97·10^{-7}·N_{d}^{1/4} + 57.9·10^{-12}·N_{d}^{1/2} (eV)(Jain et al. [1990])
For p-type InAs
ΔE_{g} = 8.34·10^{-9}·N_{a}^{1/3} + 2.91·10^{-7}·N_{a}^{1/4} + 4.53·10^{-12}·N_{a}^{1/2} (eV)(Jain et al. [1990])
Effective Masses
Electrons:Electron effective mass versus electron concentration (Kesamanly et al. [1969]). |
For Γ-valley | m_{Γ} = 0.023m_{o} |
Nonparabolicity: E(1+αE) = h^{2}k^{2}/(2m_{Γ}) |
α = 1.4 (eV^{-1}) |
In the L-valley effective mass of density of states | m_{L}=0.29m_{o} |
In the X-valley effective mass of density of states | m_{X}=0.64m_{o} |
Heavy |
m_{h} = 0.41m_{o} |
Light |
m_{lp} = 0.026m_{o} |
Split-off band |
m_{so} = 0.16m_{o} |
Donors and Acceptors
Ionization energies of shallow donors
≥ 0.001(eV): Se, S, Te, Ge, Si, Sn, CuIonization energies of shallow acceptors, eV
Sn | Ge | Si | Cd | Zn |
0.01 | 0.014 | 0.02 | 0.015 | 0.01 |