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Characteristics and Properties

NSM Archive - Optical properties of Germanium (Ge)

Optical properties

Infrared refractive index n	4.00 (300K )
Radiative recombination coefficient	6.4·10-14 cm3/s

	Refractive index n versus wavelength at four different temperatures. (Icenogle et al. [1976]).
	Refractive index n versus photon energy. T = 300 K. (Philipp and Taft [1959]).
	Reflectance versus photon energy. T = 300 K. (Cordona et al. [1967]).
	Low-level absorption spectrum of high purity Ge at various temperatures. (Macfarlane et al. [1957]).
	The absorption edge at three different temperatures (Seysyan et al. [1968]).
	The absorption coefficient versus photon energy. T = 300 K. (Phillipp and Taft [1959]).
	The absorption coefficient at different donor (As) concentrations. T = 300 K (Pankove and Aigrain [1962]).
	Intrinsic absorption edges at different donor (As) concentrations at 300 K obtained after substracting the free carrier absorption from the measured values. (Pankove and Aigrain [1962]).
T = 293 K.	The absorption coefficient at different acceptor (Ga) concentrations. (Bagaev et al. [1962]).
	Intrinsic absorption edge at different doping (Ga) level T = 293 K. (Bagaev et al. [1962]).
	Free carrier absorption versus wavelength at different doping levels. n-Ge. T = 300 K. Conduction electron concentration no:     1 -- 8.0 x 1017 cm-3;     2 -- 4.8 x 1018 cm-3;     3 -- 1.35 x 1019 cm-3;   4 -- 1.8 x 1019 cm-3;     5 -- 3.6 x 1019 cm-3; Fistul (1967)
	Free carrier absorption versus photon energy at different doping levels. p-Ge. T = 300 K. Free hole concentration po:     1 -- 7.3 x 1015 cm-3;     2 -- 1.6 x 1016 cm-3;     3 -- 6.0 x 1016 cm-3;   4 -- 1.9 x 1017 cm-3;     5 -- 1.2 x 1018 cm-3;     6 -- 1.0 x 1019 cm-3. Ukhanov (1966), Vasilyeva et al (1967)

Two-photon absorption coefficient β

λ	τp, ns	β×1011, m W-1	Ref.
2.36	30	50±0.3	(Zubov et al. [1971]).
2.6-3.1	100	2500 (?)	(Wenzel et al. [1973]).
	480	340	(Gibson et al. [1976]).

 

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