Basic Parameters of Gallium Phosphide (GaP)

GaP - Gallium Phosphide

Basic Parameters at 300 K

Crystal structure Zinc Blende
Group of symmetry Td2-F43m
Number of atoms in 1 cm3 4.94·1022
Auger recombination coefficient 10-30 cm6/s
Debye temperature 445 K
Density 4.14 g cm-3
Dielectric constant (static) 11.1
Dielectric constant (high frequency) 9.11
Effective electron mass ml 1.12mo
Effective electron mass mt 0.22mo
Effective hole masses mh 0.79mo
Effective hole masses mlp 0.14mo
Electron affinity 3.8 eV
Lattice constant 5.4505 A
Optical phonon energy 0.051