NSM Archive - Gallium Nitride (GaN) - Impact Ionization
Impact Ionization
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GaN. Calculated impact ionization rates as a function of inverse electric
field for electrons (αi) and holes (βi-)
in wurtzite and zinc blende GaN. 300 K. 1,1'- wurtzite GaN; 2,2'- zinc blende GaN Oguzman et al. (1997) |
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GaN, Wurtzite. Normalized breakdown electric field ( Fi
)and relative breakdown voltage (Vi) as a function of
temperature measured p+-p-n diodes. Fi (300 K) ~= |