NSM Archive - Gallium Nitride (GaN) - Transport Properties in High Electric Fields

GaN - Gallium Nitride

Transport Properties in High Electric Fields

GaN. Calculated steady-state drift velocity in wutzite (curve 1) and zinc blende (curve 2) GaN vs. the electric field applied along (100) direction in the zinc blende and along (1010) direction in the wurtzite GaN.
Kolnik et al. (1995), Albrecht et al. (1998).
GaN. Calculated average electron energy versus electric field.
1 - Wurtzite GaN;
2 - Zinc blende GaN.
Kolnik et al. (1995).
GaN, Wurtzite. Calculated electric field dependences of electron drift velocity for different temperatures.
Nd = n= 1017cm-3.
T (K): 1 - 77; 2 - 300; 3 - 500; 4 - 1000
Bhapkar & Shur (1997).
GaN, Wurtzite. Calculated electric field dependences of electron drift velocity at T = 300 K for different doping levels:
solid line, Nd = n= 1016 cm-3;
dashed line, Nd = n = 1017 cm-3;
circles Nd = n= 1018 cm-3
Bhapkar & Shur (1997).
GaN, Wurtzite. Electron temperature versus electric field,
Nd = n = 1017 cm-3.
Solid line, T = 77 K;
dashed line, T = 300 K;
circles, T = 500 K;
pluses, T = 1000 K
Bhapkar & Shur (1997).
GaN, Wurtzite. Electron fraction in central valley versus electric field.
Solid line, T = 11 K;
dashed line, T = 300 K;
circles, T = 500 K;
pluses, T = 1000 K
Bhapkar & Shur (1997).