NSM Archive - Gallium Nitride (GaN) - Basic Electrical parameters
Electrical properties
Basic Parameters
Basic Parameters for Zinc Blende crystal structureBasic Parameters for Wurtzite crystal structure
Basic Parameters for Zinc Blende (cubic) crystal structure
| Breakdown field | ~5 x 106 V cm-1 | 300 K |
| Mobility electrons | =< 1000 cm2 V-1 s-1 | 300 K |
| Mobility holes | =< 350 cm2 V-1 s-1 | 300 K |
| Diffusion coefficient electrons | 25 cm2 s-1 | 300 K |
| Diffusion coefficient holes | 9 cm2 s-1 | 300 K |
| Diffusion coefficient holes | 3.2 x 105 m s-1 | 300 K |
| Diffusion coefficient holes | 9.5 x 104 m s-1 | 300 K |
Basic Parameters for Wurtzite crystal structure
| Breakdown field | ~5 x 106 V cm-1 | 300 K |
| Mobility electrons | =< 1000 cm2 V-1 s-1 | 300 K |
| Mobility holes | =< 200 cm2 V-1 s-1 | 300 K |
| Diffusion coefficient electrons | 25 cm2 s-1 | 300 K |
| Diffusion coefficient holes | 5 cm2 s-1 | 300 K |
| Diffusion coefficient holes | 2.6 x 105 m s-1 | 300 K |
| Diffusion coefficient holes | 9.4 x 104 m s-1 | 300 K |
| Breakdown field | 3.3 x 106 V cm-1 | 300 K | Chow & Ghezzo (1996) |
| Conductivity σ | 6÷12 Ω-1 cm-1 | 300 K ; n ~= 1017 cm-3, undoped layers grown by vaporphase technique on sapphire | Ilegems (1972); Ilegems & Dingle (1973); Crouch et al. (1978) |
| Mobility electrons μn | =< 440 cm2 V-1 s-1 | 300 K ; purest material, n ~= 1017 cm-3 | Ilegems (1972); Ilegems & Dingle (1973); Crouch et al. (1978) |