NSM Archive - Gallium Nitride (GaN)

GaN - Gallium Nitride
Basic Parameters at 300 K
Band structure and carrier concentration
Basic Parameters
for Zinc Blende crystal structure
for Wurtzite crystal structure
Band Structure
for Zinc Blende crystal structure
for Wurtzite crystal structure
Effective Density of States in the Conduction and Valence Band
Temperature Dependences
Dependence on Hydrostatic Pressure
Band Discontinuities at Heterointerfaces
Effective Masses and Density of States
Donors and Acceptors
Electrical Properties
Basic Parameters of Electrical Properties
Mobility and Hall Effect
Two-Dimensional Electron Gas Mobility at AlGaN/GaN interface
Transport Properties in High Electric Fields.
Impact Ionization.
Recombination Parameters.
Optical properties
Thermal properties
Basic parameters
Thermal conductivity
Lattice properties
Mechanical properties, elastic constants, lattice vibrations
Basic Parameters
Elastic Constants
Acoustic Wave Speeds
Phonon Frequencies
Frequencies and Symmetries of the Strongest Modes
Piezoelectric, Thermoelectic and Magnetic Properties
Impurities and defects.
Luminescence peak energies Epeak
Deep defect states
Binding energies of acceptors

Dear colleagues,
If you have new information of GaN physical properties [links, papers (.pdf, .doc, .tif...)] and would like to present it on this website Electronic archive: "New Semiconductor Materials. Characteristics and Properties" please contact us.
Thank you in advance, Vadim Siklitsky

Webmaster & co-author of NSM-archive