Reference for Gallium Indium Phosphide (GaInP)
References:
- Goldberg Yu.A. Handbook Series on Semiconductor Parameters, vol.2, M. Levinshtein, S. Rumyantsev and M. Shur, ed., World Scientific, London, 1999, pp. 37-61.
- S. Adachi, J.Appl. Phys., 54, no.4, pp.1844-1848 (1983).
- S. Adachi, J.Appl. Phys., 66, no.12, pp.6030-6040 (1989).
- D.E.Aspnes and A.A.Studna, Phys.Rev., B27, no.2, pp.985-1009 (1983).
- D.Auvergne, P.Merle, H.Mathieu, Solid State Commun., 21, no.5, pp.437-439 (1977).
- A.Bensaada, A.Chennouf, R.W.Cochrane, J.T.Graham, R.Leonelli, R.A.Masut, J.Appl.Phys., 75, no.6, pp.3024-3029 (1994).
- P.Bhattacharya, N.Debbar, D.Biswas,M.Razeghi, M.Defour, F.Omnes, in Gallium Arsenide and Related Compounds, 1989 (Inst. of Phys. Conf. Ser., Bristol and New York, 106, pp.351-356 (1989)).
- K.F.Brennan, P.K.Chiang, J.Appl.Phys., 71, no.2, pp.1055-1057 (1992).
- M.Bugajski and W.Lewandowski, J.Appl. Phys., 57, no.2, pp.521-530 (1985).
- Y.J.Chan, D.Pavlidis, M.Razeghi, F.Omnes, in Gallium Arsenide and Related Compounds, 1989 (Inst. of Phys. Conf. Ser., Bristol and New York, 106, pp.891 (1989)).
- L.B.Chang, K.Y.Cheng, C.C.Liu, J.Appl.Phys., 64, no.3, pp.1116-1119 (1988).
- H.F.Chau, D.Pavlidis, J.Appl.Phys., 72, no.2, pp.531-538 (1992).
- T.P.Chin, J.C.P.Chang, K.L.Kavanagh, C.W.Tu, P.D.Kirchner, J.M.Woodall, Appl. Phys. Lett., 62, no.19, pp.2369-2371 (1993).
- L.W. Cook, G.E.Bulman, G.E.Stillman, Appl. Phys. Lett., 40, no.7, pp.589-591 (1982).
- M.D.Dawson, G.Duggan, Appl. Phys. Lett, 64, no.7, pp.892-894 (1994).
- K.Domen, M.Kondo, N.Tanahashi, in Gallium Arsenide and Related Compounds, 1992 (Inst. of Phys. Conf. Ser, Bristol and Philadelphia, 129, pp.447-452 (1992)).
- P.Emanuelsson, M.Drechsler, D.M.Hofmann, B.K.Meyer, M.Moser, F.Scholz, Appl.Phys.Lett., 64, no.21, pp.2849-2851 (1994).
- A.R.Goni, K.Syassen, K.Strossner, M.Cardona, Phys. Rev., B39, no.5, pp.3178-3184 (1989).
- G.W.Hooft, C.J.B.Riviere, M.P.C.M.Krijn, C.T.H.F.Liedenbaum, A.Valster, Appl. Phys. Lett., 61, no.26, pp.3169-3171 (1992).
- M.Ikeda, K.Kaneko, J.Appl. Phys, 66, no.11, pp.5285-5289 (1989).
- E.Jahne, B.Ulrici, Phys.Stat. Sol. (b), 101, no.1, pp.169-179 (1980).
- S.C.Jain, J.M.McGregor, D.J.Roulston, J.Appl. Phys., 68, no.7, pp.3747-3749 (1990).
- Y.Kaneko, K.Kishino, J.Appl.Phys., 76, no.3, pp.1809-1818 (1994).
- T.Kato, T.Matsumoto, T.Ishida, Jap.J.Appl.Phys., 19, no.12, pp.2367-2375 (1980).
- Yu.K.Krutogolov, S.V.Dovzhenko, S.A.Driordiev, L.I.Krutogolova, Yu.I.Kunakin, S.A.Ryzhikh, Sov. Phys. Semicond., 23, no.5, pp.557-558 (1989).
- I.Kudman and R.J.Paff, J.Appl.Phys., 43, no.9, pp.3760-3762 (1972).
- A.S.Kyuregyan, S.N.Yurkov, Sov. Phys.Semicond., 23, no.10, pp.1126-1132 (1989).
- H.Lange, J.Donecker, H.Friedrich, Phys. Stat. Solidi (b), 73, no.2, pp.633-639 (1976).
- H.Lee, D.Biswas, M.V.Klein, H.Morkoc, D.E.Aspnes, B.D.Choe, J.Kim, C.O.Griffiths, J.Appl. Phys., 75, no.10, pp.5040-5051 (1994).
- J.B.Lee, I.Kim, H.K.Kwon, B.D.Choe, Appl.Phys.Lett., 62, no.14, pp.1620-1622 (1993).
- S.C.Lu, M.C.Wu, C.Y.Lee, Y.C.Yang, J. Appl. Phys., 70, no.4, pp.2309-2312 (1991).
- H.M.Macksey, N.Holonyak Jr., R.D.Dupuis, J.C.Campbell, G.W.Zack, J.Appl. Phys., 44, no.3, pp.1333-1341 (1973).
- B.T.McDermott, K.G.Reid, N.A.El-Masry, S.M.Bedair, W.M. Duncan, X.Yin, F.H.Pollak, Appl. Phys. Lett., 56, no.12, pp.1172-1174 (1990).
- D.J.Mowbray, O.P.Kowalski, M.S.Skolnick, M.C.De Long, M.Hopkinson, J.P.R.David, A.G.Cullis, J. Appl. Phys., 75, no.4, pp.2029-2034 (1994).
- S.O'Brien, D.P.Bour, J.R.Shealy, in Gallium Arsenide and Related Compounds 1988 (Inst. of Phys. Conf. Ser., Bristol and Philadelphia, Ser. , 96, pp.401-404 (1989)).
- J.M.Olson, R.K.Ahrenkiel, D.J.Dunlavy, B.Keyes, A.E. Kibbler, Appl. Phys. Lett., 55, no.12, pp.1208-1210 (1989).
- A.Onton, M.R.Lorenz, W.Reuter, J.Appl. Phys., 42, no.9, pp.3420-3432 (1971).
- H.B.Panish and H.C.Casey, J. Appl. Phys., 40, no.1, pp.163-167 (1969).
- S.J.Pearton, F.Ren, W.S.Hobson, C.R.Abernathye, U.K.Chakrabarti, J.Vac. Sci. Technol., B12, no.1, pp.142-146 (1994).
- U.Piesbergen, Zh.Naturforschung, 18a, no.2, pp.141-147 (1963).
- M.Schubert, V.Gottschalch, C.M.Herzinger, H.Yao, P.G.Snyder, J.A.Woollam, J.Appl. Phys., 77, no.7, pp.3416-3419 (1995).
- T.Shitara, K.Eberl, Appl. Phys. Lett., 65, no.3, pp.356-358 (1994).
- N.N.Sirota and A.A.Sidorov, Doklady Akademii Nauk SSSR (Soviet Physics Doklady), in Russian, 303, no.5, pp.1123-1126 (1988).
- U.Strauss, W.W.Ruhle, H.J.Queisser, K.Nakano, A.Ishibashi, J. Appl. Phys., 75, no.12, pp.8204-8206 (1994).
- S.M.Sze, G.Gibbons, Appl. Phys. Lett., 8, no.5, pp.111-113 (1966).
- S. Ves, K.Strossner, C.K.Kim, M.Cardona, Solid State Comm., 55, no.4,pp.327-331 (1985).
- B.Zhang, S.Lan, L.Q.Li, W.J.Xu, G.Q.Yang, H.D.Liu, Solid State Commun., 92, no.5,pp.419-422 (1994)).