NSM Archive - Basic Parameters of Gallium Indium Phosphide (GaInP)

GaInP - Gallium Indium Phosphide

Basic Parameters at 300 K

  Ga0.51In0.49P GaxIn1-xP
Crystal structure Zinc Blende Zinc Blende
Group of symmetry Td2-F43m Td2-F43m
Number of atoms in 1 cm3 4.46·1022 (3.96+0.98x)·1022
Density 4.47 g·cm-3 4.81-0.67x g·cm-3
Dielectric constant (static) 11.8 12.5-1.4x
Dielectric constant (high frequency) 9.35 9.61-0.5x
Density-of-states electron mass mcd 0.088 mo 0.63+0.13x (x > 0.74) mo
Effective hole masses mh 0.7 mo 0.6+0.19x mo
Effective hole masses mlp 0.12 mo 0.09+0.05x mo
Electron affinity 4.1 4.38-0.58x eV
Lattice constant 5.653 A 5.8687-0.4182x A