Electrical Properties of Gallium Indium Arsenide (GaInAs)

GaInAs - Gallium Indium Arsenide

Electrical properties

Basic Parameters
Mobility and Hall Effect
Two-dimensional electron and hole gas mobility in heterostructures
Transport Properties in High Electric Fields
Impact Ionization
Recombination Parameters

Basic Parameters

Ga0.47In0.53As GaxIn1-xAs Remarks Referens
Breakdown field ≈ 2·105 V/cm ≈(2÷4)·105 V/cm 300 K Goldberg Yu.A. & N.M. Schmidt (1999)
Mobility electrons <12·103 cm2 V-1s-1 (40-80.7x+49.2x2)·103 cm2 V-1s-1 300 K  
Mobility holes <300 cm2 V-1s-1 ~300÷400 cm2 V-1s-1 300 K  
Diffusion coefficient electrons <300 cm2/s (10-20.2x+12.3x2)·102 cm2/s 300 K  
Diffusion coefficient holes <7.5 cm2/s ~7÷12 cm2/s 300 K  
Electron thermal velocity 5.5·105 m/s (7.7-5.9x+2.6x2)·105 m/s 300 K  
Hole thermal velocity 2·105m/s (1.8÷2)·105m/s 300 K  
Surface recombination velocity   <106 cm/s 300 K  
Radiative recombination coefficient 0.96·10-10 cm3/s      300 K  
Auger coefficient 7·10-29 cm6/s   300 K