Electrical Properties of Gallium Indium Arsenide (GaInAs)
Electrical properties
Basic ParametersMobility and Hall Effect
Two-dimensional electron and hole gas mobility in heterostructures
Transport Properties in High Electric Fields
Impact Ionization
Recombination Parameters
Basic Parameters
| Ga0.47In0.53As | GaxIn1-xAs | Remarks | Referens | |
| Breakdown field | ≈ 2·105 V/cm | ≈(2÷4)·105 V/cm | 300 K | Goldberg Yu.A. & N.M. Schmidt (1999) |
| Mobility electrons | <12·103 cm2 V-1s-1 | (40-80.7x+49.2x2)·103 cm2 V-1s-1 | 300 K | |
| Mobility holes | <300 cm2 V-1s-1 | ~300÷400 cm2 V-1s-1 | 300 K | |
| Diffusion coefficient electrons | <300 cm2/s | (10-20.2x+12.3x2)·102 cm2/s | 300 K | |
| Diffusion coefficient holes | <7.5 cm2/s | ~7÷12 cm2/s | 300 K | |
| Electron thermal velocity | 5.5·105 m/s | (7.7-5.9x+2.6x2)·105 m/s | 300 K | |
| Hole thermal velocity | 2·105m/s | (1.8÷2)·105m/s | 300 K | |
| Surface recombination velocity | <106 cm/s | 300 K | ||
| Radiative recombination coefficient | 0.96·10-10 cm3/s | 300 K | ||
| Auger coefficient | 7·10-29 cm6/s | 300 K |