Thermal properties of Gallium Indium Arsenide Antimonide (GaInAsSb)

GaInAsSb - Gallium Indium Arsenide Antimonide

Thermal properties


Basic parameters

    Remarks Referens
Bulk modulus 5.7·1011 dyn cm-2 300 K; compositions lattice-matched to GaSb Mikhailova M.P. (1999)
  5.8·1011 dyn cm-2 300 K; compositions lattice-matched to InAs.  
Debye temperature ~270 K 300 K; compositions lattice-matched
to GaSb and InAs
 
Density (5.69-0.08x) g cm-3 300 K; compositions lattice-matched
to GaSb. see also Mechanical properties
 
Melting point, Tm ~= 1100° C    
Specific heat ~0.25 J g-1°C -1 300K  
Thermal conductivity (****) W cm-1 °C -1
300K  
Thermal expansion coefficient, linear (****) °C -1 300K  

Thermal conductivity

Thermal resistivity for several GaInAsSb compositions. 300K.

(Both et al.[1990]).
Composition Eg, eV Thermal resistivity, cmK/
Ga0.94In0.06As0.05Sb0.95 0.67 5.5
Ga0.85In0.15As0.13Sb0.87 0.59 7.1
Ga0.81In0.19As0.16Sb0.83 0.56 10.4



Temperature dependence of thermal conductivity n-GaSb (x=1, y=0).
Electron concentration at 300 K
n-type sample, no (cm-3): 1. 1.6·1017; 2. 8.6·1017; 3. 1.8·1018;
p-type sample. 4. Undoped GaSb po = 1.42·1017(cm-3)
(Poujade and Albany [1969]).
Temperature dependence of thermal conductivity InAs (x=0, y=1).
n-type sample, no (cm-3): 1. 1.6·1016; 2. 2.0·1017;
p-type sample, po (cm-3): 3. 2.0·1017.
(Tamarin and Shalyt [1971]).
Temperature dependence of thermal conductivity GaSb (x=1, y=0) (for high temperature)
(Okhotin et al. [1972]).
Temperature dependence of specific heat at constant pressure InAs (x=0, y=1).
(Piesbergen[1963]).
Contours of constant lattice-mismatch as a function of x and y in GaInAsSb system grown on a GaSb substrate.
Ghiti and O'Reilly [1993].
Phase diagram for GaInAsSb at 530 °C.
Experimental points:
º - concentration of Sb in liquid phase xl Sb,
· - xl As,
º - xl Ga.
Solid phase is lattice matched to GaSb. Guseinov et al.[1989].
Solidus isothermes for several GaInAsSb compositions lattice-matched to GaSb as a function of the Sb concentration in liquid phase xl Sb.
Tournie [1990].


Lattice properties

Lattice parameters

    Remarks Referens
Lattice constant, a 6.0959 (GaSb) ÷ 6.0583 (InAs) 300K
  For compositions lattice-matched  
Lattice constant 6.0959 A to GaSb [y=(0.3835-0.3835x)/(0.4210+0.216x) ]; 300 K
Adachi (1987)
  6.0583 A to InAs [y=(0.4210-0.3835x)/(0.4210+0.216x) ]; 300 K
 
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