Optical Properties of Gallium Indium Arsenide Antimonide (GaInAsSb)
Optical properties
Remarks  Referens  
Dielectric constant (static)  15.3+0.4x  300 K; compositions latticematched to GaSb. 
Mikhailova M.P. (1999) 
15.15+0.35x  _{300 K; compositions latticematched to InAs.}_{.} 

Dielectric constant (high frequency)  12.6+1.8x  300 K; compositions latticematched to GaSb. 

12.3+1.8x  _{300 K; compositions latticematched to InAs.} 

Infrared refractive index  ~=3.51+0.25y  _{300 K; compositions latticematched to InAs.}_{} see aso Refractive index n vs. photon energy 

Radiative recombination coefficient  ~ 10^{10} cm^{3} s^{1}  300 K  
Optical phonon energy  ~= 0.03 meV  300 K 
Refractive index n versus photon energy for different composition alloys latticematched to GaSb. (Adachi (1987)). 

Refractive index n versus photon energy for different composition alloys latticematched to InAs. (Adachi (1987)). 

The absorption coefficient versus energy 300 K. 1. x=1, y=1 (GaSb) 1. x=0, y=1 (InAs) (Adachi (1989)). 