Electrical Properties of Gallium Indium Arsenide Antimonide (GaInAsSb)

GaInAsSb - Gallium Indium Arsenide Antimonide

Electrical properties

Basic Parameters
Mobility and Hall Effect
Impact Ionization

Basic Parameters for Ga0.47In0.53AsyP1-y

Breakdown field ≈5·104 V/cm  
Mobility electrons see Mobility and Hall Effect  
Mobility holes see Mobility and Hall Effect  
Diffusion coefficient electrons **** cm2/s  
Diffusion coefficient holes **** cm2/s  
Electron thermal velocity *** m/s  
Hole thermal velocity *** m/s  

Parametrizations of the electron and hole ionization coefficients.

For electrons:
x y αo (cm-1) Fno (V cm-1) m
0.8 0.17 2.41·106 4.45·105 2
For holes:
x y βo (cm-1) Fpo (V cm-1) m
0.8 0.17 1.98·106 3.69·105 2