Electrical Properties of Gallium Indium Arsenide Antimonide (GaInAsSb)
Electrical properties
Basic ParametersMobility and Hall Effect
Impact Ionization
Basic Parameters for Ga0.47In0.53AsyP1-y
| Breakdown field | ≈5·104 V/cm | |
| Mobility electrons | see Mobility and Hall Effect | |
| Mobility holes | see Mobility and Hall Effect | |
| Diffusion coefficient electrons | **** cm2/s | |
| Diffusion coefficient holes | **** cm2/s | |
| Electron thermal velocity | *** m/s | |
| Hole thermal velocity | *** m/s |
Parametrizations of the electron and hole ionization coefficients.
For electrons:
| x | y | αo (cm-1) | Fno (V cm-1) | m |
| 0.8 | 0.17 | 2.41·106 | 4.45·105 | 2 |
| x | y | βo (cm-1) | Fpo (V cm-1) | m |
| 0.8 | 0.17 | 1.98·106 | 3.69·105 | 2 |