Basic Parameters Gallium Indium Arsenide Phosphide (GaInAsP)  NSM Archive
Basic Parameters
Remarks  Referens  
Crystal structure  Zinc Blende  
Group of symmetry  T_{d}^{2}F43m  
To estimate the value of any parameter b of one can use an approximate formula: b(x,y)~= xy b_{GaAs} +(1x)y b_{InAs} + x(1y) b_{GaSb} +(1x)(1y) b_{InSb} 
Adachi (1987) 

Number of atoms in 1 cm^{3}  3.53·10^{22}  300 K; compositions latticematched to GaSb. 
Mikhailova M.P. (1999) 
3.59·10^{22}  _{300 K; compositions latticematched to InAs.} 

Bulk modulus  5.7·10^{11} dyn cm^{2}  _{300 K; compositions latticematched to GaSb}  Mikhailova M.P. (1999) 
5.8·10^{11} dyn cm^{2}  _{300 K; compositions latticematched to InAs.}  
Debye temperature  ~270 K^{}  _{300 K; compositions latticematched to GaSb and InAs}  
Density  (5.690.08x) g cm^{3}  _{300 K; compositions latticematched to GaSb. see also Mechanical properties}  
Melting point, T_{m}  ~= 1100° C  
Specific heat  ~0.25 J g^{1}°C ^{1}  300K  
Dielectric constant (static)  15.3+0.4x  300 K; compositions latticematched to GaSb. 
Mikhailova M.P. (1999) 
15.15+0.35x  _{300 K; compositions latticematched to InAs.}_{.} 

Dielectric constant (high frequency)  12.6+1.8x  300 K; compositions latticematched to GaSb. 

12.3+1.8x  _{300 K; compositions latticematched to InAs.} 

Infrared refractive index  ~=3.51+0.25y  _{300 K; compositions latticematched to InAs.}_{} see aso Refractive index n vs. photon energy 

Radiative recombination coefficient  ~ 10^{10} cm^{3} s^{1}  300 K  
Optical phonon energy  ~= 0.03 meV  300 K  
Energy gaps, E_{g} 
(0.29 0.65x+0.6x^{2}) eV  300 K; compositions latticematched to GaSb. 
Mikhailova M.P. (1999) 
(0.36 0.23x+0.54x^{2}) eV  _{300 K; compositions latticematched to InAs.} 

Electron affinity  (4.87 0.81x) eV  300 K; compositions latticematched to GaSb.  
(4.9 0.83x) eV  _{300 K; compositions latticematched to InAs.}  
Effective conduction band density of states  2.5x10^{19 }(0.022+0.03x 0.012x^{2})^{3/2} cm^{3}  300 K; compositions latticematched to GaSb. 

2.5x10^{19 }(0.023+0.032x 0.012x^{2})^{3/2} cm^{3}  _{300 K; compositions latticematched to InAs.} 

Effective valence band density of states  2.5x10^{19 }(0.41+0.16x +0.23x^{2}) ^{3/2} cm^{3}  300 K; compositions latticematched to GaSb. 

2.5x10^{19 }(0.41+0.14x +0.23x^{2}) ^{3/2} cm^{3}  _{300 K; compositions latticematched to InAs.} 

Effective electron mass m_{e}  0.022 0.03x +0.012x^{2} m_{o}  300 K; compositions latticematched to GaSb 
Mikhailova M.P. (1999) 
0.023 0.032x +0.012x^{2} m_{o}  _{300 K; compositions latticematched to InAs} 

Effective hole masses (heavy) m_{h}  m_{h} ~= 0.4 m_{o}  300 K; compositions latticematched to GaSb  
m_{h} ~= 0.41 m_{o}  _{300 K; compositions latticematched to InAs}  
Effective hole masses (light) m_{lp}  m_{lp} ~= (0.025 +0.025x) m_{o} 
300 K; compositions latticematched to GaSb  
m_{lp} ~= (0.026 +0.026x) m_{o} 
_{300 K; compositions latticematched to InAs}  
Effective hole masses (splitoff band) m_{s}  m_{so} ~= *** m_{o}  300K  
Lattice constant  6.0959 A  300 K; compositions latticematched to GaSb 

6.0583 A  300 K; compositions latticematched to _{InAs} see also Lattice properties 

Auger recombination coefficient 
2 x 10^{27}(InAsSb) 5x10^{30}(GaSb) cm^{6}/s  300 K; compositions latticematched to GaSb 